JP7618593B2 - 半導体装置及びその駆動方法 - Google Patents

半導体装置及びその駆動方法 Download PDF

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JP7618593B2
JP7618593B2 JP2021572801A JP2021572801A JP7618593B2 JP 7618593 B2 JP7618593 B2 JP 7618593B2 JP 2021572801 A JP2021572801 A JP 2021572801A JP 2021572801 A JP2021572801 A JP 2021572801A JP 7618593 B2 JP7618593 B2 JP 7618593B2
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resistance
resistance change
semiconductor device
electrode
filament
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JPWO2021149780A5 (https=
JPWO2021149780A1 (https=
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巧 三河
幸治 片山
隆太郎 安原
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0035—Evaluating degradation, retention or wearout, e.g. by counting writing cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0045—Read using current through the cell

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Theoretical Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • Computational Linguistics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2021572801A 2020-01-24 2021-01-21 半導体装置及びその駆動方法 Active JP7618593B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020010097 2020-01-24
JP2020010097 2020-01-24
PCT/JP2021/002106 WO2021149780A1 (ja) 2020-01-24 2021-01-21 半導体装置及びその駆動方法

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JPWO2021149780A1 JPWO2021149780A1 (https=) 2021-07-29
JPWO2021149780A5 JPWO2021149780A5 (https=) 2022-09-14
JP7618593B2 true JP7618593B2 (ja) 2025-01-21

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JP (1) JP7618593B2 (https=)
WO (1) WO2021149780A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11127458B1 (en) * 2020-04-28 2021-09-21 Applied Materials, Inc. Non-uniform state spacing in multi-state memory element for low-power operation
JP2023030687A (ja) * 2021-08-23 2023-03-08 日本放送協会 ニューロモルフィック素子及びニューラルネットワーク素子

Citations (5)

* Cited by examiner, † Cited by third party
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JP2001525606A (ja) 1997-12-04 2001-12-11 アクソン テクノロジーズ コーポレイション プログラム可能なサブサーフェス集合メタライゼーション構造およびその作製方法
WO2013021649A1 (ja) 2011-08-10 2013-02-14 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法
JP2015018591A (ja) 2013-07-12 2015-01-29 株式会社東芝 不揮発性半導体記憶装置
JP2018521400A (ja) 2015-07-13 2018-08-02 株式会社デンソー メモリスタ神経形態学的回路及びメモリスタ神経形態学的回路をトレーニングするための方法
JP2018166194A (ja) 2017-03-28 2018-10-25 学校法人慶應義塾 クロスバー構造および最適化問題解探索システム

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JP6180700B2 (ja) * 2011-09-09 2017-08-16 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
US10268949B2 (en) 2016-03-21 2019-04-23 International Business Machines Corporation Artificial neuron apparatus
WO2018013247A2 (en) * 2016-06-02 2018-01-18 Brown University Physics informed learning machine
JP6602279B2 (ja) * 2016-09-20 2019-11-06 株式会社東芝 メムキャパシタ、ニューロ素子およびニューラルネットワーク装置
JP6914342B2 (ja) * 2017-09-07 2021-08-04 パナソニック株式会社 半導体記憶素子を用いたニューラルネットワーク演算回路
CN111052153B (zh) 2017-09-07 2023-07-14 松下控股株式会社 使用半导体存储元件的神经网络运算电路及动作方法
JP6569755B1 (ja) * 2018-03-06 2019-09-04 Tdk株式会社 ニューラルネットワーク装置、信号生成方法およびプログラム
US10482953B1 (en) * 2018-08-14 2019-11-19 Macronix International Co., Ltd. Multi-state memory device and method for adjusting memory state characteristics of the same
US11250317B2 (en) * 2018-09-27 2022-02-15 Intel Corporation Three-dimensional oscillator structure
US10784313B1 (en) * 2019-06-11 2020-09-22 International Business Machines Corporation Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
US11600325B2 (en) * 2020-12-02 2023-03-07 International Business Machines Corporation Non volatile resistive memory logic device
KR102648228B1 (ko) * 2021-05-13 2024-03-14 포항공과대학교 산학협력단 신경망 소자 및 이를 구성하는 단위 시냅스 소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001525606A (ja) 1997-12-04 2001-12-11 アクソン テクノロジーズ コーポレイション プログラム可能なサブサーフェス集合メタライゼーション構造およびその作製方法
WO2013021649A1 (ja) 2011-08-10 2013-02-14 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法
JP2015018591A (ja) 2013-07-12 2015-01-29 株式会社東芝 不揮発性半導体記憶装置
JP2018521400A (ja) 2015-07-13 2018-08-02 株式会社デンソー メモリスタ神経形態学的回路及びメモリスタ神経形態学的回路をトレーニングするための方法
JP2018166194A (ja) 2017-03-28 2018-10-25 学校法人慶應義塾 クロスバー構造および最適化問題解探索システム

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WO2021149780A1 (ja) 2021-07-29
US20220198251A1 (en) 2022-06-23
US12417802B2 (en) 2025-09-16

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