JPWO2021149780A5 - - Google Patents
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- JPWO2021149780A5 JPWO2021149780A5 JP2021572801A JP2021572801A JPWO2021149780A5 JP WO2021149780 A5 JPWO2021149780 A5 JP WO2021149780A5 JP 2021572801 A JP2021572801 A JP 2021572801A JP 2021572801 A JP2021572801 A JP 2021572801A JP WO2021149780 A5 JPWO2021149780 A5 JP WO2021149780A5
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- semiconductor device
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020010097 | 2020-01-24 | ||
| JP2020010097 | 2020-01-24 | ||
| PCT/JP2021/002106 WO2021149780A1 (ja) | 2020-01-24 | 2021-01-21 | 半導体装置及びその駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021149780A1 JPWO2021149780A1 (https=) | 2021-07-29 |
| JPWO2021149780A5 true JPWO2021149780A5 (https=) | 2022-09-14 |
| JP7618593B2 JP7618593B2 (ja) | 2025-01-21 |
Family
ID=76992548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021572801A Active JP7618593B2 (ja) | 2020-01-24 | 2021-01-21 | 半導体装置及びその駆動方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12417802B2 (https=) |
| JP (1) | JP7618593B2 (https=) |
| WO (1) | WO2021149780A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11127458B1 (en) * | 2020-04-28 | 2021-09-21 | Applied Materials, Inc. | Non-uniform state spacing in multi-state memory element for low-power operation |
| JP2023030687A (ja) * | 2021-08-23 | 2023-03-08 | 日本放送協会 | ニューロモルフィック素子及びニューラルネットワーク素子 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6418049B1 (en) * | 1997-12-04 | 2002-07-09 | Arizona Board Of Regents | Programmable sub-surface aggregating metallization structure and method of making same |
| JP5184721B1 (ja) | 2011-08-10 | 2013-04-17 | パナソニック株式会社 | 抵抗変化型不揮発性記憶素子の書き込み方法 |
| JP6180700B2 (ja) * | 2011-09-09 | 2017-08-16 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| JP2015018591A (ja) | 2013-07-12 | 2015-01-29 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US10332004B2 (en) | 2015-07-13 | 2019-06-25 | Denso Corporation | Memristive neuromorphic circuit and method for training the memristive neuromorphic circuit |
| US10268949B2 (en) | 2016-03-21 | 2019-04-23 | International Business Machines Corporation | Artificial neuron apparatus |
| WO2018013247A2 (en) * | 2016-06-02 | 2018-01-18 | Brown University | Physics informed learning machine |
| JP6602279B2 (ja) * | 2016-09-20 | 2019-11-06 | 株式会社東芝 | メムキャパシタ、ニューロ素子およびニューラルネットワーク装置 |
| JP6974955B2 (ja) | 2017-03-28 | 2021-12-01 | 学校法人慶應義塾 | クロスバー構造および最適化問題解探索システム |
| JP6914342B2 (ja) * | 2017-09-07 | 2021-08-04 | パナソニック株式会社 | 半導体記憶素子を用いたニューラルネットワーク演算回路 |
| CN111052153B (zh) | 2017-09-07 | 2023-07-14 | 松下控股株式会社 | 使用半导体存储元件的神经网络运算电路及动作方法 |
| JP6569755B1 (ja) * | 2018-03-06 | 2019-09-04 | Tdk株式会社 | ニューラルネットワーク装置、信号生成方法およびプログラム |
| US10482953B1 (en) * | 2018-08-14 | 2019-11-19 | Macronix International Co., Ltd. | Multi-state memory device and method for adjusting memory state characteristics of the same |
| US11250317B2 (en) * | 2018-09-27 | 2022-02-15 | Intel Corporation | Three-dimensional oscillator structure |
| US10784313B1 (en) * | 2019-06-11 | 2020-09-22 | International Business Machines Corporation | Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM |
| US11600325B2 (en) * | 2020-12-02 | 2023-03-07 | International Business Machines Corporation | Non volatile resistive memory logic device |
| KR102648228B1 (ko) * | 2021-05-13 | 2024-03-14 | 포항공과대학교 산학협력단 | 신경망 소자 및 이를 구성하는 단위 시냅스 소자 |
-
2021
- 2021-01-21 WO PCT/JP2021/002106 patent/WO2021149780A1/ja not_active Ceased
- 2021-01-21 JP JP2021572801A patent/JP7618593B2/ja active Active
-
2022
- 2022-03-10 US US17/691,733 patent/US12417802B2/en active Active