JP7610860B2 - 柱状半導体装置とその製造方法 - Google Patents
柱状半導体装置とその製造方法 Download PDFInfo
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- JP7610860B2 JP7610860B2 JP2022504920A JP2022504920A JP7610860B2 JP 7610860 B2 JP7610860 B2 JP 7610860B2 JP 2022504920 A JP2022504920 A JP 2022504920A JP 2022504920 A JP2022504920 A JP 2022504920A JP 7610860 B2 JP7610860 B2 JP 7610860B2
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- layer
- semiconductor
- impurity
- pillar
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- 239000004065 semiconductor Substances 0.000 title claims description 404
- 238000004519 manufacturing process Methods 0.000 title claims description 93
- 239000012535 impurity Substances 0.000 claims description 328
- 238000009792 diffusion process Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 48
- 239000000370 acceptor Substances 0.000 claims description 46
- 239000004020 conductor Substances 0.000 claims description 33
- 150000001875 compounds Chemical class 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 679
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 38
- 238000010586 diagram Methods 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 238000005530 etching Methods 0.000 description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- 229910052681 coesite Inorganic materials 0.000 description 19
- 229910052906 cristobalite Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 19
- 229910052682 stishovite Inorganic materials 0.000 description 19
- 229910052905 tridymite Inorganic materials 0.000 description 19
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 13
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Rod-Shaped Construction Members (AREA)
- Die Bonding (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/009721 WO2021176693A1 (ja) | 2020-03-06 | 2020-03-06 | 柱状半導体装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021176693A1 JPWO2021176693A1 (https=) | 2021-09-10 |
| JPWO2021176693A5 JPWO2021176693A5 (https=) | 2022-11-14 |
| JP7610860B2 true JP7610860B2 (ja) | 2025-01-09 |
Family
ID=77613964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022504920A Active JP7610860B2 (ja) | 2020-03-06 | 2020-03-06 | 柱状半導体装置とその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230058135A1 (https=) |
| JP (1) | JP7610860B2 (https=) |
| TW (1) | TWI786561B (https=) |
| WO (1) | WO2021176693A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023135631A1 (ja) * | 2022-01-11 | 2023-07-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体メモリ装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014184933A1 (ja) | 2013-05-16 | 2014-11-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置の製造方法 |
| WO2015033382A1 (ja) | 2013-09-03 | 2015-03-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| WO2015059789A1 (ja) | 2013-10-23 | 2015-04-30 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| WO2017104066A1 (ja) | 2015-12-18 | 2017-06-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置及びその製造方法 |
| WO2019087328A1 (ja) | 2017-11-01 | 2019-05-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体装置と、その製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009095997A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体装置およびその製造方法 |
| TW201306233A (zh) * | 2011-07-21 | 2013-02-01 | Rexchip Electronics Corp | 具有輔助電極結構的立體動態隨機存取記憶體 |
| JP5973665B2 (ja) * | 2013-06-13 | 2016-08-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | Ｓｇｔを有する半導体装置とその製造方法 |
| US10192867B1 (en) * | 2018-02-05 | 2019-01-29 | Globalfoundries Inc. | Complementary FETs with wrap around contacts and method of forming same |
-
2020
- 2020-03-06 JP JP2022504920A patent/JP7610860B2/ja active Active
- 2020-03-06 WO PCT/JP2020/009721 patent/WO2021176693A1/ja not_active Ceased
-
2021
- 2021-03-03 TW TW110107547A patent/TWI786561B/zh active
-
2022
- 2022-09-02 US US17/902,620 patent/US20230058135A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014184933A1 (ja) | 2013-05-16 | 2014-11-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置の製造方法 |
| WO2015033382A1 (ja) | 2013-09-03 | 2015-03-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| WO2015059789A1 (ja) | 2013-10-23 | 2015-04-30 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| WO2017104066A1 (ja) | 2015-12-18 | 2017-06-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置及びその製造方法 |
| WO2019087328A1 (ja) | 2017-11-01 | 2019-05-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体装置と、その製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021176693A1 (https=) | 2021-09-10 |
| US20230058135A1 (en) | 2023-02-23 |
| TWI786561B (zh) | 2022-12-11 |
| WO2021176693A1 (ja) | 2021-09-10 |
| TW202141748A (zh) | 2021-11-01 |
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