JP7567929B2 - シリコン単結晶の製造方法 - Google Patents

シリコン単結晶の製造方法 Download PDF

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Publication number
JP7567929B2
JP7567929B2 JP2022553849A JP2022553849A JP7567929B2 JP 7567929 B2 JP7567929 B2 JP 7567929B2 JP 2022553849 A JP2022553849 A JP 2022553849A JP 2022553849 A JP2022553849 A JP 2022553849A JP 7567929 B2 JP7567929 B2 JP 7567929B2
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single crystal
flow rate
silicon single
dopant
pulling
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Japanese (ja)
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JPWO2022071014A1 (enExample
Inventor
省吾 小林
宣人 深津
崇浩 金原
瞳 山本
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2022553849A 2020-09-29 2021-09-21 シリコン単結晶の製造方法 Active JP7567929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020163638 2020-09-29
JP2020163638 2020-09-29
PCT/JP2021/034487 WO2022071014A1 (ja) 2020-09-29 2021-09-21 シリコン単結晶の製造方法

Publications (2)

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JPWO2022071014A1 JPWO2022071014A1 (enExample) 2022-04-07
JP7567929B2 true JP7567929B2 (ja) 2024-10-16

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JP2022553849A Active JP7567929B2 (ja) 2020-09-29 2021-09-21 シリコン単結晶の製造方法

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US (1) US12351937B2 (enExample)
JP (1) JP7567929B2 (enExample)
CN (1) CN116406433A (enExample)
DE (1) DE112021005126B4 (enExample)
TW (1) TWI784689B (enExample)
WO (1) WO2022071014A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7692880B2 (ja) * 2022-07-29 2025-06-16 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶インゴットの評価方法
CN116949554B (zh) * 2023-09-05 2023-11-21 鄂尔多斯市中成榆能源有限公司 直拉单晶硅的生产方法及生产系统

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004307305A (ja) 2003-04-10 2004-11-04 Sumitomo Mitsubishi Silicon Corp シリコン単結晶及び単結晶育成方法
WO2009025336A1 (ja) 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP2012206874A (ja) 2011-03-29 2012-10-25 Covalent Materials Corp 単結晶引上装置及び単結晶引き上げ方法
JP2014511146A (ja) 2011-04-14 2014-05-12 ジーティー アドヴァンスト シーズィー， エルエルシー 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置
JP2014125402A (ja) 2012-12-27 2014-07-07 Globalwafers Japan Co Ltd シリコン単結晶の引き上げ方法
JP2015101498A (ja) 2013-11-22 2015-06-04 信越半導体株式会社 シリコン単結晶の製造方法
JP2016060667A (ja) 2014-09-18 2016-04-25 信越半導体株式会社 抵抗率制御方法、追加ドーパント投入装置、並びに、ｎ型シリコン単結晶
JP2018525308A (ja) 2015-08-12 2018-09-06 エスケー シルトロン カンパニー リミテッド 単結晶成長方法
JP2018140915A (ja) 2017-02-28 2018-09-13 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JP2550739B2 (ja) 1990-02-23 1996-11-06 住友金属工業株式会社 結晶成長方法
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Sumco Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
JP6222013B2 (ja) * 2014-08-29 2017-11-01 信越半導体株式会社 抵抗率制御方法
JP6304125B2 (ja) 2015-05-21 2018-04-04 信越半導体株式会社 シリコン単結晶の軸方向の抵抗率制御方法
CN105970284B (zh) * 2016-05-30 2019-08-16 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
US11702760B2 (en) * 2017-04-25 2023-07-18 Sumco Corporation N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004307305A (ja) 2003-04-10 2004-11-04 Sumitomo Mitsubishi Silicon Corp シリコン単結晶及び単結晶育成方法
WO2009025336A1 (ja) 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP2012206874A (ja) 2011-03-29 2012-10-25 Covalent Materials Corp 単結晶引上装置及び単結晶引き上げ方法
JP2014511146A (ja) 2011-04-14 2014-05-12 ジーティー アドヴァンスト シーズィー， エルエルシー 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置
JP2014125402A (ja) 2012-12-27 2014-07-07 Globalwafers Japan Co Ltd シリコン単結晶の引き上げ方法
JP2015101498A (ja) 2013-11-22 2015-06-04 信越半導体株式会社 シリコン単結晶の製造方法
JP2016060667A (ja) 2014-09-18 2016-04-25 信越半導体株式会社 抵抗率制御方法、追加ドーパント投入装置、並びに、ｎ型シリコン単結晶
JP2018525308A (ja) 2015-08-12 2018-09-06 エスケー シルトロン カンパニー リミテッド 単結晶成長方法
JP2018140915A (ja) 2017-02-28 2018-09-13 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置

Also Published As

Publication number Publication date
US20230340691A1 (en) 2023-10-26
CN116406433A (zh) 2023-07-07
US12351937B2 (en) 2025-07-08
WO2022071014A1 (ja) 2022-04-07
DE112021005126T5 (de) 2023-07-20
TWI784689B (zh) 2022-11-21
TW202217085A (zh) 2022-05-01
JPWO2022071014A1 (enExample) 2022-04-07
DE112021005126B4 (de) 2025-10-02

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