JP7548226B2 - 発光素子、発光素子アレイ及び発光素子アレイの製造方法 - Google Patents

発光素子、発光素子アレイ及び発光素子アレイの製造方法 Download PDF

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Publication number
JP7548226B2
JP7548226B2 JP2021524765A JP2021524765A JP7548226B2 JP 7548226 B2 JP7548226 B2 JP 7548226B2 JP 2021524765 A JP2021524765 A JP 2021524765A JP 2021524765 A JP2021524765 A JP 2021524765A JP 7548226 B2 JP7548226 B2 JP 7548226B2
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light
compound semiconductor
layer
base surface
semiconductor layer
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JPWO2020246280A1 (https=
Inventor
達史 濱口
賢太郎 林
仁道 伊藤
弥樹博 横関
倫太郎 幸田
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Sony Corp
Sony Group Corp
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Sony Corp
Sony Group Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2021524765A 2019-06-04 2020-05-25 発光素子、発光素子アレイ及び発光素子アレイの製造方法 Active JP7548226B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019104380 2019-06-04
JP2019104380 2019-06-04
JP2020083889 2020-05-12
JP2020083889 2020-05-12
PCT/JP2020/020451 WO2020246280A1 (ja) 2019-06-04 2020-05-25 発光素子、発光素子アレイ及び発光素子アレイの製造方法

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JPWO2020246280A1 JPWO2020246280A1 (https=) 2020-12-10
JP7548226B2 true JP7548226B2 (ja) 2024-09-10

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US (1) US12334706B2 (https=)
JP (1) JP7548226B2 (https=)
DE (1) DE112020002694B4 (https=)
WO (1) WO2020246280A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022172663A1 (https=) * 2021-02-10 2022-08-18

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4297207A4 (en) * 2021-02-22 2024-08-28 Sony Group Corporation Laser element, laser element array, and laser element manufacturing method
EP4354225B1 (en) * 2021-06-01 2025-09-17 Sony Group Corporation Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
WO2023145271A1 (ja) * 2022-01-27 2023-08-03 ソニーグループ株式会社 面発光素子、光源装置及び面発光素子の製造方法

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JP2002048903A (ja) 2000-05-26 2002-02-15 Comoc:Kk マイクロレンズアレイおよびマイクロレンズアレイを用いた表示装置
JP2002237653A (ja) 2001-02-02 2002-08-23 Samsung Electro Mech Co Ltd Ｐ型電極と活性層との間に効果的な正孔拡散のためのスペーサを備えるＧａＮ面発光レーザダイオードおよびその製造方法
JP2002374045A (ja) 2001-04-25 2002-12-26 Commissariat A L'energie Atomique 異なる波長に対応する複数の異なる長さの共振空洞を有する光学装置
JP2003262706A (ja) 2002-03-12 2003-09-19 Ricoh Co Ltd マイクロレンズアレイ、及びその製造方法、貼り合せマイクロレンズアレイ、及びそれを使用した画像表示装置、及び画像投射装置
JP2004526194A (ja) 2001-03-02 2004-08-26 イノベイティブ・ソリューションズ・アンド・サポート・インコーポレイテッド ヘッドアップディスプレイのためのイメージ表示生成器
JP2006066538A (ja) 2004-08-25 2006-03-09 Hamamatsu Photonics Kk 面発光レーザ光源の製造方法及び面発光レーザ光源
JP2008083685A (ja) 2006-08-30 2008-04-10 Hitachi Maxell Ltd バックライト装置に用いられるマイクロレンズアレイシート及びマイクロレンズアレイシートを製造するためのロール版
JP2009510496A (ja) 2005-09-30 2009-03-12 リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー 光を均質化するための装置
JP2013541854A (ja) 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
WO2018083877A1 (ja) 2016-11-02 2018-05-11 ソニー株式会社 発光素子及びその製造方法
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WO2019038365A1 (en) 2017-08-23 2019-02-28 Koninklijke Philips N.V. VCSEL NETWORK WITH OPTICAL DEVICE INTEGRATED ON COMMON WAFER

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JP2002048903A (ja) 2000-05-26 2002-02-15 Comoc:Kk マイクロレンズアレイおよびマイクロレンズアレイを用いた表示装置
JP2002237653A (ja) 2001-02-02 2002-08-23 Samsung Electro Mech Co Ltd Ｐ型電極と活性層との間に効果的な正孔拡散のためのスペーサを備えるＧａＮ面発光レーザダイオードおよびその製造方法
JP2004526194A (ja) 2001-03-02 2004-08-26 イノベイティブ・ソリューションズ・アンド・サポート・インコーポレイテッド ヘッドアップディスプレイのためのイメージ表示生成器
JP2002374045A (ja) 2001-04-25 2002-12-26 Commissariat A L'energie Atomique 異なる波長に対応する複数の異なる長さの共振空洞を有する光学装置
JP2003262706A (ja) 2002-03-12 2003-09-19 Ricoh Co Ltd マイクロレンズアレイ、及びその製造方法、貼り合せマイクロレンズアレイ、及びそれを使用した画像表示装置、及び画像投射装置
JP2006066538A (ja) 2004-08-25 2006-03-09 Hamamatsu Photonics Kk 面発光レーザ光源の製造方法及び面発光レーザ光源
JP2009510496A (ja) 2005-09-30 2009-03-12 リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー 光を均質化するための装置
JP2008083685A (ja) 2006-08-30 2008-04-10 Hitachi Maxell Ltd バックライト装置に用いられるマイクロレンズアレイシート及びマイクロレンズアレイシートを製造するためのロール版
JP2013541854A (ja) 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
WO2018083877A1 (ja) 2016-11-02 2018-05-11 ソニー株式会社 発光素子及びその製造方法
WO2018190030A1 (ja) 2017-04-14 2018-10-18 ソニー株式会社 発光素子および発光装置
WO2018221042A1 (ja) 2017-05-31 2018-12-06 ソニー株式会社 発光素子および発光素子の製造方法
WO2019003627A1 (ja) 2017-06-28 2019-01-03 ソニー株式会社 発光素子及びその製造方法
WO2019017044A1 (ja) 2017-07-18 2019-01-24 ソニー株式会社 発光素子及び発光素子アレイ
WO2019038365A1 (en) 2017-08-23 2019-02-28 Koninklijke Philips N.V. VCSEL NETWORK WITH OPTICAL DEVICE INTEGRATED ON COMMON WAFER

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022172663A1 (https=) * 2021-02-10 2022-08-18
JP7803288B2 (ja) 2021-02-10 2026-01-21 ソニーグループ株式会社 垂直共振器型面発光レーザ素子

Also Published As

Publication number Publication date
JPWO2020246280A1 (https=) 2020-12-10
US20220247149A1 (en) 2022-08-04
US12334706B2 (en) 2025-06-17
DE112020002694B4 (de) 2024-11-28
DE112020002694T5 (de) 2022-02-17
WO2020246280A1 (ja) 2020-12-10

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