DE112020002694B4 - Lichtemittierendes element und verfahren zum herstellen eines arrays aus lichtemittierenden elementen - Google Patents

Lichtemittierendes element und verfahren zum herstellen eines arrays aus lichtemittierenden elementen Download PDF

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Publication number
DE112020002694B4
DE112020002694B4 DE112020002694.9T DE112020002694T DE112020002694B4 DE 112020002694 B4 DE112020002694 B4 DE 112020002694B4 DE 112020002694 T DE112020002694 T DE 112020002694T DE 112020002694 B4 DE112020002694 B4 DE 112020002694B4
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Prior art keywords
light
region
compound semiconductor
base part
layer
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Expired - Fee Related
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DE112020002694.9T
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German (de)
English (en)
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DE112020002694T5 (de
Inventor
Tatsushi Hamaguchi
Kentaro Hayashi
Masamichi Ito
Mikihiro Yokozeki
Rintaro Koda
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Sony Group Corp
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Sony Group Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE112020002694.9T 2019-06-04 2020-05-25 Lichtemittierendes element und verfahren zum herstellen eines arrays aus lichtemittierenden elementen Expired - Fee Related DE112020002694B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019-104380 2019-06-04
JP2019104380 2019-06-04
JP2020083889 2020-05-12
JP2020-083889 2020-05-12
PCT/JP2020/020451 WO2020246280A1 (ja) 2019-06-04 2020-05-25 発光素子、発光素子アレイ及び発光素子アレイの製造方法

Publications (2)

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DE112020002694T5 DE112020002694T5 (de) 2022-02-17
DE112020002694B4 true DE112020002694B4 (de) 2024-11-28

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DE112020002694.9T Expired - Fee Related DE112020002694B4 (de) 2019-06-04 2020-05-25 Lichtemittierendes element und verfahren zum herstellen eines arrays aus lichtemittierenden elementen

Country Status (4)

Country Link
US (1) US12334706B2 (https=)
JP (1) JP7548226B2 (https=)
DE (1) DE112020002694B4 (https=)
WO (1) WO2020246280A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172663A1 (ja) * 2021-02-10 2022-08-18 ソニーグループ株式会社 垂直共振器型面発光レーザ素子
EP4297207A4 (en) * 2021-02-22 2024-08-28 Sony Group Corporation Laser element, laser element array, and laser element manufacturing method
EP4354225B1 (en) * 2021-06-01 2025-09-17 Sony Group Corporation Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
WO2023145271A1 (ja) * 2022-01-27 2023-08-03 ソニーグループ株式会社 面発光素子、光源装置及び面発光素子の製造方法

Citations (7)

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US20080158683A1 (en) 2006-12-27 2008-07-03 Young Je Yun Image Sensor and Manufacturing Method Thereof
US20090244713A1 (en) 2006-08-30 2009-10-01 Yuji Kodera Micro lens array sheet for use in backlight device and molding roll for manufacturing such mirco lens array sheet
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WO2018139877A1 (ko) 2017-01-25 2018-08-02 엘지이노텍 주식회사 반도체 소자
WO2019017044A1 (ja) 2017-07-18 2019-01-24 ソニー株式会社 発光素子及び発光素子アレイ

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JP2002048903A (ja) 2000-05-26 2002-02-15 Comoc:Kk マイクロレンズアレイおよびマイクロレンズアレイを用いた表示装置
US6353502B1 (en) * 2000-06-13 2002-03-05 Eastman Kodak Company VCSEL field correction
KR100374796B1 (ko) 2001-02-02 2003-03-03 삼성전기주식회사 Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법
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US5981975A (en) 1998-02-27 1999-11-09 The Whitaker Corporation On-chip alignment fiducials for surface emitting devices
US20090244713A1 (en) 2006-08-30 2009-10-01 Yuji Kodera Micro lens array sheet for use in backlight device and molding roll for manufacturing such mirco lens array sheet
US20080158683A1 (en) 2006-12-27 2008-07-03 Young Je Yun Image Sensor and Manufacturing Method Thereof
WO2018083877A1 (ja) 2016-11-02 2018-05-11 ソニー株式会社 発光素子及びその製造方法
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JPWO2020246280A1 (https=) 2020-12-10
US20220247149A1 (en) 2022-08-04
US12334706B2 (en) 2025-06-17
JP7548226B2 (ja) 2024-09-10
DE112020002694T5 (de) 2022-02-17
WO2020246280A1 (ja) 2020-12-10

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