JP7547616B2 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
JP7547616B2
JP7547616B2 JP2023510611A JP2023510611A JP7547616B2 JP 7547616 B2 JP7547616 B2 JP 7547616B2 JP 2023510611 A JP2023510611 A JP 2023510611A JP 2023510611 A JP2023510611 A JP 2023510611A JP 7547616 B2 JP7547616 B2 JP 7547616B2
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JP
Japan
Prior art keywords
shutter
reflector
exhaust pump
reflectors
retracted state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023510611A
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English (en)
Japanese (ja)
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JPWO2022209356A5 (https=
JPWO2022209356A1 (https=
Inventor
征隆 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Publication of JPWO2022209356A1 publication Critical patent/JPWO2022209356A1/ja
Publication of JPWO2022209356A5 publication Critical patent/JPWO2022209356A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2023510611A 2021-03-29 2022-02-14 スパッタリング装置 Active JP7547616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021055065 2021-03-29
JP2021055065 2021-03-29
PCT/JP2022/005657 WO2022209356A1 (ja) 2021-03-29 2022-02-14 スパッタリング装置

Publications (3)

Publication Number Publication Date
JPWO2022209356A1 JPWO2022209356A1 (https=) 2022-10-06
JPWO2022209356A5 JPWO2022209356A5 (https=) 2023-10-18
JP7547616B2 true JP7547616B2 (ja) 2024-09-09

Family

ID=83455890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023510611A Active JP7547616B2 (ja) 2021-03-29 2022-02-14 スパッタリング装置

Country Status (4)

Country Link
US (1) US20240162021A1 (https=)
JP (1) JP7547616B2 (https=)
CN (1) CN117043386A (https=)
WO (1) WO2022209356A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006016627A (ja) 2004-06-30 2006-01-19 Nec Kansai Ltd 真空蒸着装置
WO2011067820A1 (ja) 2009-12-04 2011-06-09 キヤノンアネルバ株式会社 スパッタリング装置、及び電子デバイスの製造方法
WO2011117945A1 (ja) 2010-03-26 2011-09-29 キヤノンアネルバ株式会社 スパッタリング装置及び電子デバイスの製造方法
WO2013094200A1 (ja) 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4473410B2 (ja) * 2000-05-24 2010-06-02 キヤノンアネルバ株式会社 スパッタリング装置及び成膜方法
JP2001144017A (ja) * 2000-09-29 2001-05-25 Semiconductor Energy Lab Co Ltd スパッタ装置
US20040084305A1 (en) * 2002-10-25 2004-05-06 Semiconductor Energy Laboratory Co., Ltd. Sputtering system and manufacturing method of thin film
KR101330225B1 (ko) * 2012-05-25 2013-11-18 피에스케이 주식회사 기판 접합 방법 및 기판 리플로우 처리 장치
JP5998654B2 (ja) * 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
CN110808384B (zh) * 2019-10-11 2021-04-27 浙江锋源氢能科技有限公司 一种金属双极板及其制备方法以及燃料电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006016627A (ja) 2004-06-30 2006-01-19 Nec Kansai Ltd 真空蒸着装置
WO2011067820A1 (ja) 2009-12-04 2011-06-09 キヤノンアネルバ株式会社 スパッタリング装置、及び電子デバイスの製造方法
WO2011117945A1 (ja) 2010-03-26 2011-09-29 キヤノンアネルバ株式会社 スパッタリング装置及び電子デバイスの製造方法
WO2013094200A1 (ja) 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置

Also Published As

Publication number Publication date
CN117043386A (zh) 2023-11-10
WO2022209356A1 (ja) 2022-10-06
US20240162021A1 (en) 2024-05-16
JPWO2022209356A1 (https=) 2022-10-06

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