JPWO2022209356A1 - - Google Patents

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Publication number
JPWO2022209356A1
JPWO2022209356A1 JP2023510611A JP2023510611A JPWO2022209356A1 JP WO2022209356 A1 JPWO2022209356 A1 JP WO2022209356A1 JP 2023510611 A JP2023510611 A JP 2023510611A JP 2023510611 A JP2023510611 A JP 2023510611A JP WO2022209356 A1 JPWO2022209356 A1 JP WO2022209356A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023510611A
Other languages
Japanese (ja)
Other versions
JPWO2022209356A5 (https=
JP7547616B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022209356A1 publication Critical patent/JPWO2022209356A1/ja
Publication of JPWO2022209356A5 publication Critical patent/JPWO2022209356A5/ja
Application granted granted Critical
Publication of JP7547616B2 publication Critical patent/JP7547616B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2023510611A 2021-03-29 2022-02-14 スパッタリング装置 Active JP7547616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021055065 2021-03-29
JP2021055065 2021-03-29
PCT/JP2022/005657 WO2022209356A1 (ja) 2021-03-29 2022-02-14 スパッタリング装置

Publications (3)

Publication Number Publication Date
JPWO2022209356A1 true JPWO2022209356A1 (https=) 2022-10-06
JPWO2022209356A5 JPWO2022209356A5 (https=) 2023-10-18
JP7547616B2 JP7547616B2 (ja) 2024-09-09

Family

ID=83455890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023510611A Active JP7547616B2 (ja) 2021-03-29 2022-02-14 スパッタリング装置

Country Status (4)

Country Link
US (1) US20240162021A1 (https=)
JP (1) JP7547616B2 (https=)
CN (1) CN117043386A (https=)
WO (1) WO2022209356A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006016627A (ja) * 2004-06-30 2006-01-19 Nec Kansai Ltd 真空蒸着装置
WO2011067820A1 (ja) * 2009-12-04 2011-06-09 キヤノンアネルバ株式会社 スパッタリング装置、及び電子デバイスの製造方法
WO2011117945A1 (ja) * 2010-03-26 2011-09-29 キヤノンアネルバ株式会社 スパッタリング装置及び電子デバイスの製造方法
WO2013094200A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4473410B2 (ja) * 2000-05-24 2010-06-02 キヤノンアネルバ株式会社 スパッタリング装置及び成膜方法
JP2001144017A (ja) * 2000-09-29 2001-05-25 Semiconductor Energy Lab Co Ltd スパッタ装置
US20040084305A1 (en) * 2002-10-25 2004-05-06 Semiconductor Energy Laboratory Co., Ltd. Sputtering system and manufacturing method of thin film
KR101330225B1 (ko) * 2012-05-25 2013-11-18 피에스케이 주식회사 기판 접합 방법 및 기판 리플로우 처리 장치
JP5998654B2 (ja) * 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室
CN110808384B (zh) * 2019-10-11 2021-04-27 浙江锋源氢能科技有限公司 一种金属双极板及其制备方法以及燃料电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006016627A (ja) * 2004-06-30 2006-01-19 Nec Kansai Ltd 真空蒸着装置
WO2011067820A1 (ja) * 2009-12-04 2011-06-09 キヤノンアネルバ株式会社 スパッタリング装置、及び電子デバイスの製造方法
WO2011117945A1 (ja) * 2010-03-26 2011-09-29 キヤノンアネルバ株式会社 スパッタリング装置及び電子デバイスの製造方法
WO2013094200A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置

Also Published As

Publication number Publication date
CN117043386A (zh) 2023-11-10
WO2022209356A1 (ja) 2022-10-06
JP7547616B2 (ja) 2024-09-09
US20240162021A1 (en) 2024-05-16

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