JP7547362B2 - シャワーヘッド覆い - Google Patents

シャワーヘッド覆い Download PDF

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Publication number
JP7547362B2
JP7547362B2 JP2021557604A JP2021557604A JP7547362B2 JP 7547362 B2 JP7547362 B2 JP 7547362B2 JP 2021557604 A JP2021557604 A JP 2021557604A JP 2021557604 A JP2021557604 A JP 2021557604A JP 7547362 B2 JP7547362 B2 JP 7547362B2
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JP
Japan
Prior art keywords
processing chamber
section
sections
cover housing
showerhead
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Active
Application number
JP2021557604A
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English (en)
Japanese (ja)
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JPWO2020198267A5 (https=
JP2022523262A5 (https=
JP2022523262A (ja
Inventor
ボース・アンドリュー
ラムゼイヤー・クリストファー
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Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
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Publication of JP2022523262A publication Critical patent/JP2022523262A/ja
Publication of JPWO2020198267A5 publication Critical patent/JPWO2020198267A5/ja
Publication of JP2022523262A5 publication Critical patent/JP2022523262A5/ja
Priority to JP2024146066A priority Critical patent/JP2024167308A/ja
Application granted granted Critical
Publication of JP7547362B2 publication Critical patent/JP7547362B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/0049—Casings being metallic containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Glass Compositions (AREA)
  • Massaging Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Vehicle Body Suspensions (AREA)
JP2021557604A 2019-03-28 2020-03-25 シャワーヘッド覆い Active JP7547362B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024146066A JP2024167308A (ja) 2019-03-28 2024-08-28 シャワーヘッド覆い

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962825344P 2019-03-28 2019-03-28
US62/825,344 2019-03-28
PCT/US2020/024549 WO2020198267A1 (en) 2019-03-28 2020-03-25 Showerhead shroud

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024146066A Division JP2024167308A (ja) 2019-03-28 2024-08-28 シャワーヘッド覆い

Publications (4)

Publication Number Publication Date
JP2022523262A JP2022523262A (ja) 2022-04-21
JPWO2020198267A5 JPWO2020198267A5 (https=) 2023-03-31
JP2022523262A5 JP2022523262A5 (https=) 2023-03-31
JP7547362B2 true JP7547362B2 (ja) 2024-09-09

Family

ID=72611750

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021557604A Active JP7547362B2 (ja) 2019-03-28 2020-03-25 シャワーヘッド覆い
JP2024146066A Pending JP2024167308A (ja) 2019-03-28 2024-08-28 シャワーヘッド覆い

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024146066A Pending JP2024167308A (ja) 2019-03-28 2024-08-28 シャワーヘッド覆い

Country Status (7)

Country Link
US (2) US20220093372A1 (https=)
JP (2) JP7547362B2 (https=)
KR (2) KR102890569B1 (https=)
CN (2) CN116334588A (https=)
SG (1) SG11202110566PA (https=)
TW (2) TWI886120B (https=)
WO (1) WO2020198267A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI886120B (zh) * 2019-03-28 2025-06-11 美商蘭姆研究公司 護罩殼及具有該護罩殼的設備
US20250251140A1 (en) * 2022-04-22 2025-08-07 Lam Research Corporation Heat guard
WO2024097853A1 (en) * 2022-11-03 2024-05-10 Lam Research Corporation Segregated reactant delivery using showerhead and shroud
US20250022688A1 (en) * 2023-07-11 2025-01-16 Tokyo Electron Limited Plasma processing method and apparatus

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JP2000064051A (ja) 1998-08-11 2000-02-29 Kokusai Electric Co Ltd プラズマｃｖｄ処理装置
JP2010050483A (ja) 2001-12-25 2010-03-04 Tokyo Electron Ltd 受け渡し機構及び処理装置
US20150024609A1 (en) 2013-07-22 2015-01-22 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
JP2015079964A (ja) 2007-07-27 2015-04-23 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 多数の加工物を処理する進歩したチャンバ

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Publication number Priority date Publication date Assignee Title
JP2000064051A (ja) 1998-08-11 2000-02-29 Kokusai Electric Co Ltd プラズマｃｖｄ処理装置
JP2010050483A (ja) 2001-12-25 2010-03-04 Tokyo Electron Ltd 受け渡し機構及び処理装置
JP2015079964A (ja) 2007-07-27 2015-04-23 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 多数の加工物を処理する進歩したチャンバ
US20150024609A1 (en) 2013-07-22 2015-01-22 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities

Also Published As

Publication number Publication date
SG11202110566PA (en) 2021-10-28
CN113646466A (zh) 2021-11-12
US11488810B2 (en) 2022-11-01
KR102890569B1 (ko) 2025-11-24
TWI886120B (zh) 2025-06-11
WO2020198267A1 (en) 2020-10-01
JP2022523262A (ja) 2022-04-21
JP2024167308A (ja) 2024-12-03
KR102445935B1 (ko) 2022-09-20
KR20220132047A (ko) 2022-09-29
KR20210134427A (ko) 2021-11-09
US20220110230A1 (en) 2022-04-07
TW202542358A (zh) 2025-11-01
CN116334588A (zh) 2023-06-27
TW202104656A (zh) 2021-02-01
US20220093372A1 (en) 2022-03-24

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