SG11202110566PA - Showerhead shroud - Google Patents

Showerhead shroud

Info

Publication number
SG11202110566PA
SG11202110566PA SG11202110566PA SG11202110566PA SG11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA
Authority
SG
Singapore
Prior art keywords
showerhead
shroud
showerhead shroud
Prior art date
Application number
SG11202110566PA
Inventor
Andrew Borth
Christopher Ramsayer
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202110566PA publication Critical patent/SG11202110566PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/0049—Casings being metallic containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Vehicle Body Suspensions (AREA)
  • Massaging Devices (AREA)
  • Glass Compositions (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG11202110566PA 2019-03-28 2020-03-25 Showerhead shroud SG11202110566PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962825344P 2019-03-28 2019-03-28
PCT/US2020/024549 WO2020198267A1 (en) 2019-03-28 2020-03-25 Showerhead shroud

Publications (1)

Publication Number Publication Date
SG11202110566PA true SG11202110566PA (en) 2021-10-28

Family

ID=72611750

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202110566PA SG11202110566PA (en) 2019-03-28 2020-03-25 Showerhead shroud

Country Status (7)

Country Link
US (2) US20220093372A1 (en)
JP (1) JP2022523262A (en)
KR (2) KR20220132047A (en)
CN (2) CN113646466A (en)
SG (1) SG11202110566PA (en)
TW (1) TW202104656A (en)
WO (1) WO2020198267A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202104656A (en) 2019-03-28 2021-02-01 美商蘭姆研究公司 Showerhead shroud
WO2023205039A1 (en) * 2022-04-22 2023-10-26 Lam Research Corporation Heat guard
WO2024097853A1 (en) * 2022-11-03 2024-05-10 Lam Research Corporation Segregated reactant delivery using showerhead and shroud

Family Cites Families (29)

* Cited by examiner, † Cited by third party
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US2488710A (en) * 1946-09-23 1949-11-22 Allegheny Ludlum Steel Enclosing shield for electrical applications
US4806703A (en) * 1988-01-11 1989-02-21 The Curran Company Panel system for EMI shielded enclosures
US4831211A (en) * 1988-06-08 1989-05-16 Rockwell International Corporation EMI/RFI sealed microphonics isolation apparatus and methods
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
JPH1156248A (en) * 1997-06-09 1999-03-02 Ajinomoto Co Inc Separation and production of substance containing high concentration of oil and indentured protein from oil-containing seed
JPH11312886A (en) * 1998-04-28 1999-11-09 Mitsubishi Electric Corp Box body structure of communication equipment
JP3863352B2 (en) * 2000-06-26 2006-12-27 テクトロニクス・インターナショナル・セールス・ゲーエムベーハー Electronic equipment housing
US9345183B2 (en) * 2005-03-15 2016-05-17 Stealthdrive Canada Corp. EMI-shielding solutions for electronics enclosures using opposing three-dimensional shapes and channels formed in sheet metal
KR200454281Y1 (en) * 2007-10-16 2011-06-23 노벨러스 시스템즈, 인코포레이티드 Temperature controlled showerhead
US20090095218A1 (en) * 2007-10-16 2009-04-16 Novellus Systems, Inc. Temperature controlled showerhead
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137467B2 (en) * 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
KR200476124Y1 (en) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Offcenter ground return for rfpowered showerhead
CN103403843B (en) * 2011-03-04 2016-12-14 诺发系统公司 Mixed type ceramic showerhead
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9947512B2 (en) * 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US8987872B2 (en) * 2013-03-11 2015-03-24 Qualcomm Incorporated Electromagnetic interference enclosure for radio frequency multi-chip integrated circuit packages
US9758349B2 (en) * 2013-08-09 2017-09-12 Man-D-Tec, Inc. Elevator ventilation fan assembly
US20150129131A1 (en) * 2013-11-14 2015-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and pre-clean system
US10047438B2 (en) * 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) * 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
WO2017004050A1 (en) * 2015-06-29 2017-01-05 Applied Materials, Inc. Temperature controlled substrate processing
US10879041B2 (en) * 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US10373794B2 (en) * 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
US20170194174A1 (en) * 2015-12-30 2017-07-06 Applied Materials, Inc. Quad chamber and platform having multiple quad chambers
US9773643B1 (en) * 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
JP2018014406A (en) * 2016-07-21 2018-01-25 富士通株式会社 Enclosure and electronic apparatus
CN109690728B (en) * 2016-08-01 2021-04-06 应用材料公司 Large area VHF PECVD chamber for low damage and high throughput plasma processing
TW202104656A (en) 2019-03-28 2021-02-01 美商蘭姆研究公司 Showerhead shroud

Also Published As

Publication number Publication date
KR102445935B1 (en) 2022-09-20
US20220093372A1 (en) 2022-03-24
KR20210134427A (en) 2021-11-09
US20220110230A1 (en) 2022-04-07
US11488810B2 (en) 2022-11-01
CN116334588A (en) 2023-06-27
TW202104656A (en) 2021-02-01
JP2022523262A (en) 2022-04-21
CN113646466A (en) 2021-11-12
WO2020198267A1 (en) 2020-10-01
KR20220132047A (en) 2022-09-29

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