CN116334588A - 喷头护罩 - Google Patents

喷头护罩 Download PDF

Info

Publication number
CN116334588A
CN116334588A CN202310180191.3A CN202310180191A CN116334588A CN 116334588 A CN116334588 A CN 116334588A CN 202310180191 A CN202310180191 A CN 202310180191A CN 116334588 A CN116334588 A CN 116334588A
Authority
CN
China
Prior art keywords
flange
edge
side member
overlaps
protective case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310180191.3A
Other languages
English (en)
Chinese (zh)
Inventor
安德鲁·波尔斯
克里斯多夫·拉姆赛尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN116334588A publication Critical patent/CN116334588A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32651Shields, e.g. dark space shields, Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899Multiple chambers, e.g. cluster tools
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/0049Casings being metallic containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • H01J2237/0266Shields electromagnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Glass Compositions (AREA)
  • Massaging Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Vehicle Body Suspensions (AREA)
CN202310180191.3A 2019-03-28 2020-03-25 喷头护罩 Pending CN116334588A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962825344P 2019-03-28 2019-03-28
US62/825,344 2019-03-28
PCT/US2020/024549 WO2020198267A1 (en) 2019-03-28 2020-03-25 Showerhead shroud
CN202080025678.9A CN113646466A (zh) 2019-03-28 2020-03-25 喷头护罩

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202080025678.9A Division CN113646466A (zh) 2019-03-28 2020-03-25 喷头护罩

Publications (1)

Publication Number Publication Date
CN116334588A true CN116334588A (zh) 2023-06-27

Family

ID=72611750

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202310180191.3A Pending CN116334588A (zh) 2019-03-28 2020-03-25 喷头护罩
CN202080025678.9A Pending CN113646466A (zh) 2019-03-28 2020-03-25 喷头护罩

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080025678.9A Pending CN113646466A (zh) 2019-03-28 2020-03-25 喷头护罩

Country Status (7)

Country Link
US (2) US20220093372A1 (https=)
JP (2) JP7547362B2 (https=)
KR (2) KR102890569B1 (https=)
CN (2) CN116334588A (https=)
SG (1) SG11202110566PA (https=)
TW (2) TWI886120B (https=)
WO (1) WO2020198267A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI886120B (zh) * 2019-03-28 2025-06-11 美商蘭姆研究公司 護罩殼及具有該護罩殼的設備
US20250251140A1 (en) * 2022-04-22 2025-08-07 Lam Research Corporation Heat guard
WO2024097853A1 (en) * 2022-11-03 2024-05-10 Lam Research Corporation Segregated reactant delivery using showerhead and shroud
US20250022688A1 (en) * 2023-07-11 2025-01-16 Tokyo Electron Limited Plasma processing method and apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864978A (ja) * 1994-08-18 1996-03-08 Fujitsu Ltd 電子装置の筐体構造
US5735411A (en) * 1995-02-14 1998-04-07 Knurr-Mechanik Fur Die Elektronik Aktiengesellschaft Constructional system
CN102802386A (zh) * 2011-05-25 2012-11-28 莱尔德电子材料(深圳)有限公司 电磁干扰屏蔽组件
CN104040024A (zh) * 2011-10-25 2014-09-10 朗姆研究公司 用于电感耦合等离子体室的旋转闭锁气体喷射器总成的窗和安装装置
US20170069464A1 (en) * 2015-09-04 2017-03-09 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for rf filter applications in plasma chambers

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2488710A (en) * 1946-09-23 1949-11-22 Allegheny Ludlum Steel Enclosing shield for electrical applications
US4806703A (en) * 1988-01-11 1989-02-21 The Curran Company Panel system for EMI shielded enclosures
US4831211A (en) * 1988-06-08 1989-05-16 Rockwell International Corporation EMI/RFI sealed microphonics isolation apparatus and methods
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US5661640A (en) * 1996-01-05 1997-08-26 Dell Usa, L.P. Computer chassis having a size-adjustable, TEM-shielded circuit board support plate structure therein
JPH1156248A (ja) * 1997-06-09 1999-03-02 Ajinomoto Co Inc 油糧種子から高濃度油脂含有物と未変性タンパク質を分離、製造する方法
JPH11312886A (ja) * 1998-04-28 1999-11-09 Mitsubishi Electric Corp 通信機器装置の筐体構造
JP4064540B2 (ja) * 1998-08-11 2008-03-19 株式会社日立国際電気 プラズマcvd処理装置
JP3863352B2 (ja) * 2000-06-26 2006-12-27 テクトロニクス・インターナショナル・セールス・ゲーエムベーハー 電子機器筐体
JP2009260377A (ja) * 2001-12-25 2009-11-05 Tokyo Electron Ltd 成膜方法及び処理装置
JP4460418B2 (ja) * 2004-10-13 2010-05-12 東京エレクトロン株式会社 シールド体および真空処理装置
US9345183B2 (en) * 2005-03-15 2016-05-17 Stealthdrive Canada Corp. EMI-shielding solutions for electronics enclosures using opposing three-dimensional shapes and channels formed in sheet metal
AU2007284072B2 (en) * 2006-08-15 2011-01-20 Scott Hope A cage frame
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137467B2 (en) * 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
US20090095218A1 (en) * 2007-10-16 2009-04-16 Novellus Systems, Inc. Temperature controlled showerhead
KR200454281Y1 (ko) * 2007-10-16 2011-06-23 노벨러스 시스템즈, 인코포레이티드 온도 제어 샤워헤드
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Rf­전력공급 샤워헤드를 위한 편심 접지 복귀
CN106884157B (zh) * 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US8780004B1 (en) * 2012-01-31 2014-07-15 Western Digital Technologies, Inc. Dual configuration enclosure with optional shielding
US8987872B2 (en) * 2013-03-11 2015-03-24 Qualcomm Incorporated Electromagnetic interference enclosure for radio frequency multi-chip integrated circuit packages
US9018111B2 (en) * 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9758349B2 (en) * 2013-08-09 2017-09-12 Man-D-Tec, Inc. Elevator ventilation fan assembly
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20150129131A1 (en) * 2013-11-14 2015-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and pre-clean system
US20150185792A1 (en) * 2013-12-26 2015-07-02 Shih-Wun Li DUAL-layer SYSTEM COMPUTER ENCLOSURE
US10081869B2 (en) * 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
US10047438B2 (en) * 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US20160379851A1 (en) * 2015-06-29 2016-12-29 Bharath Swaminathan Temperature controlled substrate processing
US10373794B2 (en) * 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
US20170194174A1 (en) * 2015-12-30 2017-07-06 Applied Materials, Inc. Quad chamber and platform having multiple quad chambers
US9773643B1 (en) * 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
JP2018014406A (ja) * 2016-07-21 2018-01-25 富士通株式会社 筐体及び電子機器
KR102157824B1 (ko) * 2016-08-01 2020-09-18 어플라이드 머티어리얼스, 인코포레이티드 저-손상 및 고-스루풋 플라즈마 프로세싱을 위한 대면적 vhf pecvd 챔버
KR102330098B1 (ko) * 2017-04-24 2021-11-23 주성엔지니어링(주) 기판 처리 장치
TWI886120B (zh) 2019-03-28 2025-06-11 美商蘭姆研究公司 護罩殼及具有該護罩殼的設備

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864978A (ja) * 1994-08-18 1996-03-08 Fujitsu Ltd 電子装置の筐体構造
US5735411A (en) * 1995-02-14 1998-04-07 Knurr-Mechanik Fur Die Elektronik Aktiengesellschaft Constructional system
CN102802386A (zh) * 2011-05-25 2012-11-28 莱尔德电子材料(深圳)有限公司 电磁干扰屏蔽组件
CN104040024A (zh) * 2011-10-25 2014-09-10 朗姆研究公司 用于电感耦合等离子体室的旋转闭锁气体喷射器总成的窗和安装装置
US20170069464A1 (en) * 2015-09-04 2017-03-09 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for rf filter applications in plasma chambers

Also Published As

Publication number Publication date
SG11202110566PA (en) 2021-10-28
CN113646466A (zh) 2021-11-12
US11488810B2 (en) 2022-11-01
KR102890569B1 (ko) 2025-11-24
TWI886120B (zh) 2025-06-11
WO2020198267A1 (en) 2020-10-01
JP7547362B2 (ja) 2024-09-09
JP2022523262A (ja) 2022-04-21
JP2024167308A (ja) 2024-12-03
KR102445935B1 (ko) 2022-09-20
KR20220132047A (ko) 2022-09-29
KR20210134427A (ko) 2021-11-09
US20220110230A1 (en) 2022-04-07
TW202542358A (zh) 2025-11-01
TW202104656A (zh) 2021-02-01
US20220093372A1 (en) 2022-03-24

Similar Documents

Publication Publication Date Title
JP7313528B2 (ja) 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド
TWI783960B (zh) 具有改良的處理均勻性之基板支撐件
US11488810B2 (en) Showerhead shroud
KR102831215B1 (ko) 개방 볼륨 이퀄라이제이션 통로들 및 측면 밀폐부를 가진 평면형 기판 에지 콘택트
JP2020025100A (ja) 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム
TW201842610A (zh) 用以降低發弧的氦插塞設計
CN112534558B (zh) 预防半导体衬底处理中基座上的沉积
CN113795905B (zh) 用于衬底处理系统的滤波箱
TWI849145B (zh) 基板處理系統用的縮小直徑承載環硬件
WO2021247627A1 (en) Monobloc pedestal for efficient heat transfer
KR102957967B1 (ko) 기판 프로세싱 시스템을 위한 필터 박스
TWI906262B (zh) 基板處理工具的線性配置
KR20240058945A (ko) Icp 소스에서의 rf 전력 램프업을 완화하기 위한 인클로저
CN114830318A (zh) 用于管理不均匀性的晶片平面下方的非对称清扫块
TW202609860A (zh) 基板處理工具的線性配置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination