JP7541853B2 - 光電変換装置、光電変換システム及び移動体 - Google Patents

光電変換装置、光電変換システム及び移動体 Download PDF

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Publication number
JP7541853B2
JP7541853B2 JP2020097704A JP2020097704A JP7541853B2 JP 7541853 B2 JP7541853 B2 JP 7541853B2 JP 2020097704 A JP2020097704 A JP 2020097704A JP 2020097704 A JP2020097704 A JP 2020097704A JP 7541853 B2 JP7541853 B2 JP 7541853B2
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semiconductor substrate
photoelectric conversion
conversion device
light
region
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JP2021190659A5 (https=
JP2021190659A (ja
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靖浩 長友
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Canon Inc
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Canon Inc
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Priority to JP2020097704A priority Critical patent/JP7541853B2/ja
Priority to US17/334,219 priority patent/US11830900B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020097704A 2020-06-04 2020-06-04 光電変換装置、光電変換システム及び移動体 Active JP7541853B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020097704A JP7541853B2 (ja) 2020-06-04 2020-06-04 光電変換装置、光電変換システム及び移動体
US17/334,219 US11830900B2 (en) 2020-06-04 2021-05-28 Photoelectric conversion device having an attenuating member that attenuates a guided light

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Application Number Priority Date Filing Date Title
JP2020097704A JP7541853B2 (ja) 2020-06-04 2020-06-04 光電変換装置、光電変換システム及び移動体

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JP2021190659A JP2021190659A (ja) 2021-12-13
JP2021190659A5 JP2021190659A5 (https=) 2023-06-14
JP7541853B2 true JP7541853B2 (ja) 2024-08-29

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114447008A (zh) * 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括图像传感器的电子装置

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JP2000196055A (ja) 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2007305675A (ja) 2006-05-09 2007-11-22 Sony Corp 固体撮像素子、撮像装置
JP2010267680A (ja) 2009-05-12 2010-11-25 Canon Inc 固体撮像装置
JP2012079979A (ja) 2010-10-04 2012-04-19 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012204562A (ja) 2011-03-25 2012-10-22 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2013038176A (ja) 2011-08-05 2013-02-21 Toshiba Information Systems (Japan) Corp 裏面照射型固体撮像素子
JP2013065688A (ja) 2011-09-16 2013-04-11 Sony Corp 固体撮像素子および製造方法、並びに電子機器
JP2013098503A (ja) 2011-11-07 2013-05-20 Toshiba Corp 固体撮像素子
JP2013157367A (ja) 2012-01-27 2013-08-15 Sony Corp 撮像素子、製造装置および方法、並びに、撮像装置
JP2014096540A (ja) 2012-11-12 2014-05-22 Canon Inc 固体撮像装置およびその製造方法ならびにカメラ
WO2016143194A1 (ja) 2015-03-11 2016-09-15 オリンパス株式会社 撮像装置
JP2017224741A (ja) 2016-06-16 2017-12-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018195719A (ja) 2017-05-18 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2019047392A (ja) 2017-09-05 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
JP2019091745A (ja) 2017-11-13 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2019125784A (ja) 2018-01-12 2019-07-25 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． イメージセンサ
JP2019212737A (ja) 2018-06-04 2019-12-12 キヤノン株式会社 固体撮像素子及び固体撮像素子の製造方法、撮像システム
WO2019235179A1 (ja) 2018-06-05 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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JPH05129572A (ja) * 1991-10-31 1993-05-25 Canon Inc 固体撮像装置
JP3759435B2 (ja) 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP2012023137A (ja) 2010-07-13 2012-02-02 Panasonic Corp 固体撮像装置およびその製造方法
JP2015037121A (ja) 2013-08-13 2015-02-23 株式会社東芝 固体撮像素子
JP2018098438A (ja) 2016-12-16 2018-06-21 ソニー株式会社 光電変換素子、撮像素子、積層型撮像素子及び固体撮像装置
TWI853915B (zh) * 2019-05-10 2024-09-01 日商索尼半導體解決方案公司 攝像元件及電子機器

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196055A (ja) 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2007305675A (ja) 2006-05-09 2007-11-22 Sony Corp 固体撮像素子、撮像装置
JP2010267680A (ja) 2009-05-12 2010-11-25 Canon Inc 固体撮像装置
JP2012079979A (ja) 2010-10-04 2012-04-19 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012204562A (ja) 2011-03-25 2012-10-22 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2013038176A (ja) 2011-08-05 2013-02-21 Toshiba Information Systems (Japan) Corp 裏面照射型固体撮像素子
JP2013065688A (ja) 2011-09-16 2013-04-11 Sony Corp 固体撮像素子および製造方法、並びに電子機器
JP2013098503A (ja) 2011-11-07 2013-05-20 Toshiba Corp 固体撮像素子
JP2013157367A (ja) 2012-01-27 2013-08-15 Sony Corp 撮像素子、製造装置および方法、並びに、撮像装置
JP2014096540A (ja) 2012-11-12 2014-05-22 Canon Inc 固体撮像装置およびその製造方法ならびにカメラ
WO2016143194A1 (ja) 2015-03-11 2016-09-15 オリンパス株式会社 撮像装置
JP2017224741A (ja) 2016-06-16 2017-12-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018195719A (ja) 2017-05-18 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2019047392A (ja) 2017-09-05 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
JP2019091745A (ja) 2017-11-13 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2019125784A (ja) 2018-01-12 2019-07-25 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． イメージセンサ
JP2019212737A (ja) 2018-06-04 2019-12-12 キヤノン株式会社 固体撮像素子及び固体撮像素子の製造方法、撮像システム
WO2019235179A1 (ja) 2018-06-05 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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JP2021190659A (ja) 2021-12-13
US20210384243A1 (en) 2021-12-09

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