JP7532025B2 - 半導体装置および機器 - Google Patents

半導体装置および機器 Download PDF

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Publication number
JP7532025B2
JP7532025B2 JP2019212300A JP2019212300A JP7532025B2 JP 7532025 B2 JP7532025 B2 JP 7532025B2 JP 2019212300 A JP2019212300 A JP 2019212300A JP 2019212300 A JP2019212300 A JP 2019212300A JP 7532025 B2 JP7532025 B2 JP 7532025B2
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Japan
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section
semiconductor device
photodiode
region
direction perpendicular
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JP2019212300A
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Japanese (ja)
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JP2021086851A (ja
JP2021086851A5 (https=
Inventor
佳明 高田
一 池田
径介 太田
洋一郎 飯田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019212300A priority Critical patent/JP7532025B2/ja
Priority to CN202080080720.7A priority patent/CN114730784A/zh
Priority to PCT/JP2020/043250 priority patent/WO2021106748A1/ja
Publication of JP2021086851A publication Critical patent/JP2021086851A/ja
Priority to US17/751,406 priority patent/US12356738B2/en
Publication of JP2021086851A5 publication Critical patent/JP2021086851A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2019212300A 2019-11-25 2019-11-25 半導体装置および機器 Active JP7532025B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019212300A JP7532025B2 (ja) 2019-11-25 2019-11-25 半導体装置および機器
CN202080080720.7A CN114730784A (zh) 2019-11-25 2020-11-19 半导体装置和设备
PCT/JP2020/043250 WO2021106748A1 (ja) 2019-11-25 2020-11-19 半導体装置および機器
US17/751,406 US12356738B2 (en) 2019-11-25 2022-05-23 Semiconductor apparatus and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019212300A JP7532025B2 (ja) 2019-11-25 2019-11-25 半導体装置および機器

Publications (3)

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JP2021086851A JP2021086851A (ja) 2021-06-03
JP2021086851A5 JP2021086851A5 (https=) 2022-11-25
JP7532025B2 true JP7532025B2 (ja) 2024-08-13

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JP2019212300A Active JP7532025B2 (ja) 2019-11-25 2019-11-25 半導体装置および機器

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US (1) US12356738B2 (https=)
JP (1) JP7532025B2 (https=)
CN (1) CN114730784A (https=)
WO (1) WO2021106748A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023080197A1 (https=) * 2021-11-05 2023-05-11
US11929383B2 (en) * 2022-03-23 2024-03-12 Sony Semiconductor Solutions Corporation Intra-pixel crosstalk reduction for a multi-mode image sensor
WO2025253891A1 (ja) * 2024-06-04 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219355A (ja) 2009-03-17 2010-09-30 Sharp Corp 固体撮像素子および電子情報機器
JP2010225818A (ja) 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP2013175494A (ja) 2011-03-02 2013-09-05 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2016021479A (ja) 2014-07-14 2016-02-04 ソニー株式会社 固体撮像装置、製造方法、および電子機器
WO2017043343A1 (ja) 2015-09-11 2017-03-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2017169754A1 (ja) 2016-03-29 2017-10-05 ソニー株式会社 固体撮像装置、及び電子機器
US20170366769A1 (en) 2016-06-16 2017-12-21 Semiconductor Components Industries, Llc Imaging systems with high dynamic range and phase detection pixels
WO2018221261A1 (ja) 2017-06-02 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US20190020835A1 (en) 2017-07-14 2019-01-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and operating method for improving charge transfer of image sensor device
US20190131333A1 (en) 2017-10-31 2019-05-02 Semiconductor Components Industries, Llc High dynamic range pixel with in-pixel light shield structures
US10334191B1 (en) 2018-03-02 2019-06-25 Omnivision Technologies, Inc. Pixel array with embedded split pixels for high dynamic range imaging
US20190296075A1 (en) 2018-03-21 2019-09-26 SK Hynix Inc. Image sensor having pd bias patterns

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
JP5963453B2 (ja) * 2011-03-15 2016-08-03 株式会社荏原製作所 検査装置
JP6390856B2 (ja) * 2014-12-26 2018-09-19 パナソニックＩｐマネジメント株式会社 撮像装置
JP2017163010A (ja) * 2016-03-10 2017-09-14 ソニー株式会社 撮像装置、電子機器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219355A (ja) 2009-03-17 2010-09-30 Sharp Corp 固体撮像素子および電子情報機器
JP2010225818A (ja) 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP2013175494A (ja) 2011-03-02 2013-09-05 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2016021479A (ja) 2014-07-14 2016-02-04 ソニー株式会社 固体撮像装置、製造方法、および電子機器
WO2017043343A1 (ja) 2015-09-11 2017-03-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2017169754A1 (ja) 2016-03-29 2017-10-05 ソニー株式会社 固体撮像装置、及び電子機器
US20170366769A1 (en) 2016-06-16 2017-12-21 Semiconductor Components Industries, Llc Imaging systems with high dynamic range and phase detection pixels
WO2018221261A1 (ja) 2017-06-02 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US20190020835A1 (en) 2017-07-14 2019-01-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and operating method for improving charge transfer of image sensor device
US20190131333A1 (en) 2017-10-31 2019-05-02 Semiconductor Components Industries, Llc High dynamic range pixel with in-pixel light shield structures
US10334191B1 (en) 2018-03-02 2019-06-25 Omnivision Technologies, Inc. Pixel array with embedded split pixels for high dynamic range imaging
US20190296075A1 (en) 2018-03-21 2019-09-26 SK Hynix Inc. Image sensor having pd bias patterns

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Publication number Publication date
JP2021086851A (ja) 2021-06-03
US20220285410A1 (en) 2022-09-08
CN114730784A (zh) 2022-07-08
WO2021106748A1 (ja) 2021-06-03
US12356738B2 (en) 2025-07-08

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