CN114730784A - 半导体装置和设备 - Google Patents

半导体装置和设备 Download PDF

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Publication number
CN114730784A
CN114730784A CN202080080720.7A CN202080080720A CN114730784A CN 114730784 A CN114730784 A CN 114730784A CN 202080080720 A CN202080080720 A CN 202080080720A CN 114730784 A CN114730784 A CN 114730784A
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CN
China
Prior art keywords
block
semiconductor device
photodiode
rear surface
direction perpendicular
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Pending
Application number
CN202080080720.7A
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English (en)
Chinese (zh)
Inventor
高田佳明
池田一
太田径介
饭田洋一郎
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Publication of CN114730784A publication Critical patent/CN114730784A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202080080720.7A 2019-11-25 2020-11-19 半导体装置和设备 Pending CN114730784A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019212300A JP7532025B2 (ja) 2019-11-25 2019-11-25 半導体装置および機器
JP2019-212300 2019-11-25
PCT/JP2020/043250 WO2021106748A1 (ja) 2019-11-25 2020-11-19 半導体装置および機器

Publications (1)

Publication Number Publication Date
CN114730784A true CN114730784A (zh) 2022-07-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080080720.7A Pending CN114730784A (zh) 2019-11-25 2020-11-19 半导体装置和设备

Country Status (4)

Country Link
US (1) US12356738B2 (https=)
JP (1) JP7532025B2 (https=)
CN (1) CN114730784A (https=)
WO (1) WO2021106748A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023080197A1 (https=) * 2021-11-05 2023-05-11
US11929383B2 (en) * 2022-03-23 2024-03-12 Sony Semiconductor Solutions Corporation Intra-pixel crosstalk reduction for a multi-mode image sensor
WO2025253891A1 (ja) * 2024-06-04 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286346A1 (en) * 2008-05-14 2009-11-19 International Business Machines Corporation Methods For Forming Anti-Reflection Structures For CMOS Image Sensors
CN101840927A (zh) * 2009-03-17 2010-09-22 夏普株式会社 固态图像捕捉元件和电子信息设备
CN101847643A (zh) * 2009-03-23 2010-09-29 株式会社东芝 固态成像器件及其制造方法
CN107924931A (zh) * 2015-09-11 2018-04-17 索尼半导体解决方案公司 固态成像装置和电子设备
CN108780803A (zh) * 2016-03-29 2018-11-09 索尼公司 固态成像装置及电子设备
CN209183547U (zh) * 2017-10-31 2019-07-30 半导体元件工业有限责任公司 图像像素件及图像像素阵列

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6299058B2 (ja) 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5963453B2 (ja) * 2011-03-15 2016-08-03 株式会社荏原製作所 検査装置
JP2016021479A (ja) 2014-07-14 2016-02-04 ソニー株式会社 固体撮像装置、製造方法、および電子機器
JP6390856B2 (ja) * 2014-12-26 2018-09-19 パナソニックＩｐマネジメント株式会社 撮像装置
JP2017163010A (ja) * 2016-03-10 2017-09-14 ソニー株式会社 撮像装置、電子機器
US10033949B2 (en) 2016-06-16 2018-07-24 Semiconductor Components Industries, Llc Imaging systems with high dynamic range and phase detection pixels
CN110663248B (zh) 2017-06-02 2023-10-24 索尼半导体解决方案公司 固态摄像装置和电子设备
US10944927B2 (en) 2017-07-14 2021-03-09 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and operating method for improving charge transfer of image sensor device
US10334191B1 (en) 2018-03-02 2019-06-25 Omnivision Technologies, Inc. Pixel array with embedded split pixels for high dynamic range imaging
KR102524415B1 (ko) 2018-03-21 2023-04-24 에스케이하이닉스 주식회사 Pd 바이어스 패턴들을 갖는 이미지 센서

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090286346A1 (en) * 2008-05-14 2009-11-19 International Business Machines Corporation Methods For Forming Anti-Reflection Structures For CMOS Image Sensors
CN101840927A (zh) * 2009-03-17 2010-09-22 夏普株式会社 固态图像捕捉元件和电子信息设备
CN101847643A (zh) * 2009-03-23 2010-09-29 株式会社东芝 固态成像器件及其制造方法
CN107924931A (zh) * 2015-09-11 2018-04-17 索尼半导体解决方案公司 固态成像装置和电子设备
CN108780803A (zh) * 2016-03-29 2018-11-09 索尼公司 固态成像装置及电子设备
CN209183547U (zh) * 2017-10-31 2019-07-30 半导体元件工业有限责任公司 图像像素件及图像像素阵列

Also Published As

Publication number Publication date
JP2021086851A (ja) 2021-06-03
US20220285410A1 (en) 2022-09-08
WO2021106748A1 (ja) 2021-06-03
JP7532025B2 (ja) 2024-08-13
US12356738B2 (en) 2025-07-08

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