JP7520215B2 - 基板の製造方法、電力用半導体装置の製造方法、および基板 - Google Patents

基板の製造方法、電力用半導体装置の製造方法、および基板 Download PDF

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JP7520215B2
JP7520215B2 JP2023514629A JP2023514629A JP7520215B2 JP 7520215 B2 JP7520215 B2 JP 7520215B2 JP 2023514629 A JP2023514629 A JP 2023514629A JP 2023514629 A JP2023514629 A JP 2023514629A JP 7520215 B2 JP7520215 B2 JP 7520215B2
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plate
metal circuit
metal
circuit board
circuit plate
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JPWO2022220191A5 (https=
JPWO2022220191A1 (https=
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雅之 辻野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2023514629A 2021-04-14 2022-04-07 基板の製造方法、電力用半導体装置の製造方法、および基板 Active JP7520215B2 (ja)

Applications Claiming Priority (3)

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JP2021068280 2021-04-14
JP2021068280 2021-04-14
PCT/JP2022/017272 WO2022220191A1 (ja) 2021-04-14 2022-04-07 基板の製造方法、電力用半導体装置の製造方法、および基板

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JPWO2022220191A1 JPWO2022220191A1 (https=) 2022-10-20
JPWO2022220191A5 JPWO2022220191A5 (https=) 2023-08-10
JP7520215B2 true JP7520215B2 (ja) 2024-07-22

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214284A (ja) 2002-12-27 2004-07-29 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法
JP2006332084A (ja) 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
JP2007273661A (ja) 2006-03-31 2007-10-18 Neomax Material:Kk 半導体装置
JP2014187088A (ja) 2013-03-22 2014-10-02 Toshiba Corp パワー半導体装置の製造方法、パワー半導体装置
WO2021048937A1 (ja) 2019-09-11 2021-03-18 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214284A (ja) 2002-12-27 2004-07-29 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法
JP2006332084A (ja) 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
JP2007273661A (ja) 2006-03-31 2007-10-18 Neomax Material:Kk 半導体装置
JP2014187088A (ja) 2013-03-22 2014-10-02 Toshiba Corp パワー半導体装置の製造方法、パワー半導体装置
WO2021048937A1 (ja) 2019-09-11 2021-03-18 三菱電機株式会社 半導体装置および半導体装置の製造方法

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JPWO2022220191A1 (https=) 2022-10-20

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