JPWO2022220191A1 - - Google Patents

Info

Publication number
JPWO2022220191A1
JPWO2022220191A1 JP2023514629A JP2023514629A JPWO2022220191A1 JP WO2022220191 A1 JPWO2022220191 A1 JP WO2022220191A1 JP 2023514629 A JP2023514629 A JP 2023514629A JP 2023514629 A JP2023514629 A JP 2023514629A JP WO2022220191 A1 JPWO2022220191 A1 JP WO2022220191A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023514629A
Other languages
Japanese (ja)
Other versions
JPWO2022220191A5 (https=
JP7520215B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022220191A1 publication Critical patent/JPWO2022220191A1/ja
Publication of JPWO2022220191A5 publication Critical patent/JPWO2022220191A5/ja
Application granted granted Critical
Publication of JP7520215B2 publication Critical patent/JP7520215B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2023514629A 2021-04-14 2022-04-07 基板の製造方法、電力用半導体装置の製造方法、および基板 Active JP7520215B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021068280 2021-04-14
JP2021068280 2021-04-14
PCT/JP2022/017272 WO2022220191A1 (ja) 2021-04-14 2022-04-07 基板の製造方法、電力用半導体装置の製造方法、および基板

Publications (3)

Publication Number Publication Date
JPWO2022220191A1 true JPWO2022220191A1 (https=) 2022-10-20
JPWO2022220191A5 JPWO2022220191A5 (https=) 2023-08-10
JP7520215B2 JP7520215B2 (ja) 2024-07-22

Family

ID=83640037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514629A Active JP7520215B2 (ja) 2021-04-14 2022-04-07 基板の製造方法、電力用半導体装置の製造方法、および基板

Country Status (2)

Country Link
JP (1) JP7520215B2 (https=)
WO (1) WO2022220191A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214284A (ja) * 2002-12-27 2004-07-29 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法
JP2006332084A (ja) * 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
JP2007273661A (ja) * 2006-03-31 2007-10-18 Neomax Material:Kk 半導体装置
JP2014187088A (ja) * 2013-03-22 2014-10-02 Toshiba Corp パワー半導体装置の製造方法、パワー半導体装置
WO2021048937A1 (ja) * 2019-09-11 2021-03-18 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214284A (ja) * 2002-12-27 2004-07-29 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法
JP2006332084A (ja) * 2005-05-23 2006-12-07 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法、および半導体装置
JP2007273661A (ja) * 2006-03-31 2007-10-18 Neomax Material:Kk 半導体装置
JP2014187088A (ja) * 2013-03-22 2014-10-02 Toshiba Corp パワー半導体装置の製造方法、パワー半導体装置
WO2021048937A1 (ja) * 2019-09-11 2021-03-18 三菱電機株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
WO2022220191A1 (ja) 2022-10-20
JP7520215B2 (ja) 2024-07-22

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021016375A2 (https=)
BR102021016200A2 (https=)
BR102021016176A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230524

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240611

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240709

R150 Certificate of patent or registration of utility model

Ref document number: 7520215

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150