JP7508470B2 - メモリにおける拡張データクロック動作 - Google Patents

メモリにおける拡張データクロック動作 Download PDF

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JP7508470B2
JP7508470B2 JP2021550236A JP2021550236A JP7508470B2 JP 7508470 B2 JP7508470 B2 JP 7508470B2 JP 2021550236 A JP2021550236 A JP 2021550236A JP 2021550236 A JP2021550236 A JP 2021550236A JP 7508470 B2 JP7508470 B2 JP 7508470B2
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data clock
memory
command
data
clock
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JP2022522012A5 (https=
JP2022522012A (ja
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ジュンウォン・スー
デクスター・タミオ・チュン
マイケル・ハウジン・ロ
シャムクマール・ソジーア
ラヴィンドラ・クマール
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クアルコム,インコーポレイテッド
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    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/3237Power saving characterised by the action undertaken by disabling clock generation or distribution
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    • G11C7/1093Input synchronization
    • GPHYSICS
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    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device
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    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
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    • G06FELECTRIC DIGITAL DATA PROCESSING
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    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • GPHYSICS
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    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
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    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012Marginal testing, e.g. race, voltage or current testing of timing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Memory System (AREA)
  • Power Sources (AREA)
  • Dram (AREA)
  • Communication Control (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
JP2021550236A 2019-03-01 2020-02-28 メモリにおける拡張データクロック動作 Active JP7508470B2 (ja)

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JP2024097486A JP7703748B2 (ja) 2019-03-01 2024-06-17 メモリにおける拡張データクロック動作

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US201962812689P 2019-03-01 2019-03-01
US62/812,689 2019-03-01
US16/803,977 US11175836B2 (en) 2019-03-01 2020-02-27 Enhanced data clock operations in memory
US16/803,977 2020-02-27
PCT/US2020/020374 WO2020180677A1 (en) 2019-03-01 2020-02-28 Enhanced data clock operations in memory

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US (2) US11175836B2 (https=)
EP (2) EP4290521B1 (https=)
JP (2) JP7508470B2 (https=)
KR (2) KR102867872B1 (https=)
CN (2) CN113519025B (https=)
ES (1) ES2967120T3 (https=)
TW (2) TWI856065B (https=)
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11175836B2 (en) 2019-03-01 2021-11-16 Qualcomm Incorporated Enhanced data clock operations in memory
US11587633B2 (en) * 2020-06-23 2023-02-21 Micron Technology, Inc. Direct testing of in-package memory
US12061795B2 (en) * 2021-05-07 2024-08-13 Micron Technologies, Inc. Repair element availability communication
US11914532B2 (en) * 2021-08-31 2024-02-27 Apple Inc. Memory device bandwidth optimization
US12315551B2 (en) * 2021-12-08 2025-05-27 Advanced Micro Devices, Inc. Read clock start and stop for synchronous memories
JP7799507B2 (ja) * 2022-02-24 2026-01-15 キヤノン株式会社 メモリ制御装置、メモリ制御装置の制御方法およびプログラム
KR20230127856A (ko) 2022-02-25 2023-09-01 에스케이하이닉스 주식회사 효율적으로 클럭 동기를 수행할 수 있는 메모리 시스템
TWI846376B (zh) * 2022-03-23 2024-06-21 南韓商三星電子股份有限公司 記憶體裝置、操作記憶體裝置的方法、操作記憶體控制器的方法
US12456508B2 (en) 2022-03-23 2025-10-28 Samsung Electronics Co., Ltd. Memory device, operation method of a memory device, and operation method of a memory controller
KR102897879B1 (ko) * 2022-07-08 2025-12-08 창신 메모리 테크놀로지즈 아이엔씨 제어 장치, 메모리, 신호 처리 방법 및 전자 기기
US12542165B2 (en) * 2022-10-13 2026-02-03 SK Hynix Inc. Semiconductor system
WO2025085054A1 (en) * 2023-10-17 2025-04-24 Google Llc Lpddr5 dram wck clock power saving through command buffering

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129630A (ja) 2010-12-13 2012-07-05 Elpida Memory Inc 半導体装置
JP2016526724A (ja) 2013-07-01 2016-09-05 インテル・コーポレーション 不整合信号受信器に対するタイミング制御
US20170004869A1 (en) 2015-07-01 2017-01-05 Samsung Electronics Co., Ltd. Semiconductor memory device having clock generation scheme based on command

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4060527B2 (ja) * 2000-12-19 2008-03-12 富士通株式会社 クロック同期型ダイナミックメモリ
US6898683B2 (en) 2000-12-19 2005-05-24 Fujitsu Limited Clock synchronized dynamic memory and clock synchronized integrated circuit
US6781911B2 (en) 2002-04-09 2004-08-24 Intel Corporation Early power-down digital memory device and method
US6650594B1 (en) * 2002-07-12 2003-11-18 Samsung Electronics Co., Ltd. Device and method for selecting power down exit
KR100605606B1 (ko) * 2003-05-29 2006-07-28 주식회사 하이닉스반도체 반도체 메모리 장치의 동기식 셀프 리프레쉬 제어 방법 및제어 회로
TWI410970B (zh) * 2005-07-29 2013-10-01 Ibm 控制記憶體的方法及記憶體系統
US8964779B2 (en) * 2007-11-30 2015-02-24 Infineon Technologies Ag Device and method for electronic controlling
JP4962396B2 (ja) * 2008-04-23 2012-06-27 日本電気株式会社 パケット処理装置
JP5060574B2 (ja) * 2010-03-16 2012-10-31 株式会社東芝 メモリシステム
WO2012021380A2 (en) 2010-08-13 2012-02-16 Rambus Inc. Fast-wake memory
WO2012122381A2 (en) 2011-03-09 2012-09-13 Rambus Inc. Power-management for integrated circuits
JP5819678B2 (ja) * 2011-08-30 2015-11-24 ルネサスエレクトロニクス株式会社 Usbハブ及びusbハブの制御方法
WO2013095551A1 (en) * 2011-12-22 2013-06-27 Intel Corporation Mechanisms for clock gating
US9280614B1 (en) * 2012-11-30 2016-03-08 Cadence Design Systems, Inc. Methods, systems, and apparatus for clock topology planning with reduced power consumption
US10169262B2 (en) 2015-07-14 2019-01-01 Qualcomm Incorporated Low-power clocking for a high-speed memory interface
US10186309B2 (en) * 2016-06-29 2019-01-22 Samsung Electronics Co., Ltd. Methods of operating semiconductor memory devices and semiconductor memory devices
KR20180034738A (ko) * 2016-09-26 2018-04-05 삼성전자주식회사 메모리 장치 및 그것의 분주 클록 보정 방법
WO2018081746A1 (en) 2016-10-31 2018-05-03 Intel Corporation Applying chip select for memory device identification and power management control
KR20180069960A (ko) * 2016-12-15 2018-06-26 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10210918B2 (en) * 2017-02-28 2019-02-19 Micron Technology, Inc. Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal
KR102679157B1 (ko) * 2018-10-30 2024-06-27 삼성전자주식회사 모드 레지스터 쓰기 명령을 이용하여 쓰기 클럭의 듀티 사이클의 트레이닝을 수행하는 시스템 온 칩, 시스템 온 칩의 동작 방법, 및 시스템 온 칩을 포함하는 전자 장치
US11175836B2 (en) 2019-03-01 2021-11-16 Qualcomm Incorporated Enhanced data clock operations in memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129630A (ja) 2010-12-13 2012-07-05 Elpida Memory Inc 半導体装置
JP2016526724A (ja) 2013-07-01 2016-09-05 インテル・コーポレーション 不整合信号受信器に対するタイミング制御
US20170004869A1 (en) 2015-07-01 2017-01-05 Samsung Electronics Co., Ltd. Semiconductor memory device having clock generation scheme based on command

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