WO2020180677A1 - Enhanced data clock operations in memory - Google Patents
Enhanced data clock operations in memory Download PDFInfo
- Publication number
- WO2020180677A1 WO2020180677A1 PCT/US2020/020374 US2020020374W WO2020180677A1 WO 2020180677 A1 WO2020180677 A1 WO 2020180677A1 US 2020020374 W US2020020374 W US 2020020374W WO 2020180677 A1 WO2020180677 A1 WO 2020180677A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- data clock
- memory
- command
- host
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0625—Power saving in storage systems
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/3237—Power saving characterised by the action undertaken by disabling clock generation or distribution
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/325—Power saving in peripheral device
- G06F1/3275—Power saving in memory, e.g. RAM, cache
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0875—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with dedicated cache, e.g. instruction or stack
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1689—Synchronisation and timing concerns
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0656—Data buffering arrangements
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/225—Clock input buffers
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1028—Power efficiency
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/45—Caching of specific data in cache memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Definitions
- the memory may be embedded with the one processor on a semiconductor die or be part of a different semiconductor die.
- the memory may perform various functions.
- the memory may be used as cache, register file, or storage.
- the memory may be of various kinds.
- the memory may be static random access memory (SRAM), dynamic random access memory (DRAM), magnetic random access memory (MRAM), NAND flash, or NOR flash, etc.
- the command decoder 173 may be configured to decode various commands provided by the host 110 (e.g., the memory controller 130) via the link 190.
- the command decoder 173 may be configured to decode a read command, a write command, and the various WCK2CK commands presented above.
- FIG. 3 illustrates waveforms of WCK synchronization with the WCK SUSPEND mode, in accordance with certain aspects of the present disclosure.
- read operations are provided as examples. Write operations may be implemented in similar fashion.
- the host 110 e.g., the memory controller 130
- the host 110 issues a WCK2CK SYNC command to the memory 150 via the link 190, with WS_RD at logic one.
- the host 110 e.g., the memory controller 130
- WCK2CK data clock WCK synchronization
- FIG. 6 illustrates portions of the memory I/O module 160 of FIG. 1 operating the data clock (WCK) suspend mode, in accordance with certain aspects of the present disclosure.
- FIG. 6 illustrates that the memory I/O module 160 includes a WCK buffer 602, a CA buffer 606, and a DQ buffer 608 (the memory I/O module 160 may include multiple instances of these buffers).
- FIG. 6 further illustrates that the memory I/O module 160 includes a clock tree 603 and the WCK suspend control module 605.
- a data clock is received by the memory from a host via a link. See, for example, FIG. 1 and FIG. 6, the WCK buffer receives the data clock WCK from the host 110 via the link 190.
- the data clock is synchronized by the memory with the host. See, for example, the synchronization cycles between T b o and T bi of FIG. 3 and 420 at FIG. 4.
- a clock tree buffer of the memory is toggled based on the data clock to capture write data or to output read data. See, for example, the clock tree buffer 604 toggles based on the data clock WCK to capture write data or to output read data.
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Memory System (AREA)
- Power Sources (AREA)
- Dram (AREA)
- Communication Control (AREA)
- Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BR112021016211-9A BR112021016211B1 (pt) | 2019-03-01 | 2020-02-28 | Operações de relógio de dados melhorado na memória |
| CN202511668146.8A CN121300608A (zh) | 2019-03-01 | 2020-02-28 | 存储器中的增强数据时钟操作 |
| KR1020217026962A KR102867872B1 (ko) | 2019-03-01 | 2020-02-28 | 메모리에서의 향상된 데이터 클럭 동작들 |
| KR1020257032361A KR20250152104A (ko) | 2019-03-01 | 2020-02-28 | 메모리에서의 향상된 데이터 클럭 동작들 |
| EP20715575.5A EP3931830B1 (en) | 2019-03-01 | 2020-02-28 | Enhanced data clock operations in memory |
| EP23205327.2A EP4290521B1 (en) | 2019-03-01 | 2020-02-28 | Enhanced data clock operations in memory |
| JP2021550236A JP7508470B2 (ja) | 2019-03-01 | 2020-02-28 | メモリにおける拡張データクロック動作 |
| ES20715575T ES2967120T3 (es) | 2019-03-01 | 2020-02-28 | Operaciones de reloj de datos potenciadas en la memoria |
| CN202080017983.3A CN113519025B (zh) | 2019-03-01 | 2020-02-28 | 存储器中的增强数据时钟操作 |
| JP2024097486A JP7703748B2 (ja) | 2019-03-01 | 2024-06-17 | メモリにおける拡張データクロック動作 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962812689P | 2019-03-01 | 2019-03-01 | |
| US62/812,689 | 2019-03-01 | ||
| US16/803,977 US11175836B2 (en) | 2019-03-01 | 2020-02-27 | Enhanced data clock operations in memory |
| US16/803,977 | 2020-02-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020180677A1 true WO2020180677A1 (en) | 2020-09-10 |
Family
ID=72236931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2020/020374 Ceased WO2020180677A1 (en) | 2019-03-01 | 2020-02-28 | Enhanced data clock operations in memory |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11175836B2 (https=) |
| EP (2) | EP4290521B1 (https=) |
| JP (2) | JP7508470B2 (https=) |
| KR (2) | KR102867872B1 (https=) |
| CN (2) | CN113519025B (https=) |
| ES (1) | ES2967120T3 (https=) |
| TW (2) | TWI856065B (https=) |
| WO (1) | WO2020180677A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023122869A (ja) * | 2022-02-24 | 2023-09-05 | キヤノン株式会社 | メモリ制御装置、メモリ制御装置の制御方法およびプログラム |
| JP7595228B1 (ja) | 2021-12-08 | 2024-12-05 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 同期メモリのための読み取りクロック開始及び停止 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11175836B2 (en) | 2019-03-01 | 2021-11-16 | Qualcomm Incorporated | Enhanced data clock operations in memory |
| US11587633B2 (en) * | 2020-06-23 | 2023-02-21 | Micron Technology, Inc. | Direct testing of in-package memory |
| US12061795B2 (en) * | 2021-05-07 | 2024-08-13 | Micron Technologies, Inc. | Repair element availability communication |
| US11914532B2 (en) * | 2021-08-31 | 2024-02-27 | Apple Inc. | Memory device bandwidth optimization |
| KR20230127856A (ko) | 2022-02-25 | 2023-09-01 | 에스케이하이닉스 주식회사 | 효율적으로 클럭 동기를 수행할 수 있는 메모리 시스템 |
| TWI846376B (zh) * | 2022-03-23 | 2024-06-21 | 南韓商三星電子股份有限公司 | 記憶體裝置、操作記憶體裝置的方法、操作記憶體控制器的方法 |
| US12456508B2 (en) | 2022-03-23 | 2025-10-28 | Samsung Electronics Co., Ltd. | Memory device, operation method of a memory device, and operation method of a memory controller |
| KR102897879B1 (ko) * | 2022-07-08 | 2025-12-08 | 창신 메모리 테크놀로지즈 아이엔씨 | 제어 장치, 메모리, 신호 처리 방법 및 전자 기기 |
| US12542165B2 (en) * | 2022-10-13 | 2026-02-03 | SK Hynix Inc. | Semiconductor system |
| WO2025085054A1 (en) * | 2023-10-17 | 2025-04-24 | Google Llc | Lpddr5 dram wck clock power saving through command buffering |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189868A1 (en) * | 2002-04-09 | 2003-10-09 | Riesenman Robert J. | Early power-down digital memory device and method |
| US20170004869A1 (en) * | 2015-07-01 | 2017-01-05 | Samsung Electronics Co., Ltd. | Semiconductor memory device having clock generation scheme based on command |
| WO2017011351A1 (en) * | 2015-07-14 | 2017-01-19 | Qualcomm Incorporated | Low-power clocking for a high-speed memory interface |
| WO2018081746A1 (en) * | 2016-10-31 | 2018-05-03 | Intel Corporation | Applying chip select for memory device identification and power management control |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4060527B2 (ja) * | 2000-12-19 | 2008-03-12 | 富士通株式会社 | クロック同期型ダイナミックメモリ |
| US6898683B2 (en) | 2000-12-19 | 2005-05-24 | Fujitsu Limited | Clock synchronized dynamic memory and clock synchronized integrated circuit |
| US6650594B1 (en) * | 2002-07-12 | 2003-11-18 | Samsung Electronics Co., Ltd. | Device and method for selecting power down exit |
| KR100605606B1 (ko) * | 2003-05-29 | 2006-07-28 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 동기식 셀프 리프레쉬 제어 방법 및제어 회로 |
| TWI410970B (zh) * | 2005-07-29 | 2013-10-01 | Ibm | 控制記憶體的方法及記憶體系統 |
| US8964779B2 (en) * | 2007-11-30 | 2015-02-24 | Infineon Technologies Ag | Device and method for electronic controlling |
| JP4962396B2 (ja) * | 2008-04-23 | 2012-06-27 | 日本電気株式会社 | パケット処理装置 |
| JP5060574B2 (ja) * | 2010-03-16 | 2012-10-31 | 株式会社東芝 | メモリシステム |
| WO2012021380A2 (en) | 2010-08-13 | 2012-02-16 | Rambus Inc. | Fast-wake memory |
| JP5642524B2 (ja) | 2010-12-13 | 2014-12-17 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
| WO2012122381A2 (en) | 2011-03-09 | 2012-09-13 | Rambus Inc. | Power-management for integrated circuits |
| JP5819678B2 (ja) * | 2011-08-30 | 2015-11-24 | ルネサスエレクトロニクス株式会社 | Usbハブ及びusbハブの制御方法 |
| WO2013095551A1 (en) * | 2011-12-22 | 2013-06-27 | Intel Corporation | Mechanisms for clock gating |
| US9280614B1 (en) * | 2012-11-30 | 2016-03-08 | Cadence Design Systems, Inc. | Methods, systems, and apparatus for clock topology planning with reduced power consumption |
| US9658642B2 (en) | 2013-07-01 | 2017-05-23 | Intel Corporation | Timing control for unmatched signal receiver |
| US10186309B2 (en) * | 2016-06-29 | 2019-01-22 | Samsung Electronics Co., Ltd. | Methods of operating semiconductor memory devices and semiconductor memory devices |
| KR20180034738A (ko) * | 2016-09-26 | 2018-04-05 | 삼성전자주식회사 | 메모리 장치 및 그것의 분주 클록 보정 방법 |
| KR20180069960A (ko) * | 2016-12-15 | 2018-06-26 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그의 동작 방법 |
| US10210918B2 (en) * | 2017-02-28 | 2019-02-19 | Micron Technology, Inc. | Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal |
| KR102679157B1 (ko) * | 2018-10-30 | 2024-06-27 | 삼성전자주식회사 | 모드 레지스터 쓰기 명령을 이용하여 쓰기 클럭의 듀티 사이클의 트레이닝을 수행하는 시스템 온 칩, 시스템 온 칩의 동작 방법, 및 시스템 온 칩을 포함하는 전자 장치 |
| US11175836B2 (en) | 2019-03-01 | 2021-11-16 | Qualcomm Incorporated | Enhanced data clock operations in memory |
-
2020
- 2020-02-27 US US16/803,977 patent/US11175836B2/en active Active
- 2020-02-28 EP EP23205327.2A patent/EP4290521B1/en active Active
- 2020-02-28 EP EP20715575.5A patent/EP3931830B1/en active Active
- 2020-02-28 ES ES20715575T patent/ES2967120T3/es active Active
- 2020-02-28 CN CN202080017983.3A patent/CN113519025B/zh active Active
- 2020-02-28 JP JP2021550236A patent/JP7508470B2/ja active Active
- 2020-02-28 WO PCT/US2020/020374 patent/WO2020180677A1/en not_active Ceased
- 2020-02-28 KR KR1020217026962A patent/KR102867872B1/ko active Active
- 2020-02-28 CN CN202511668146.8A patent/CN121300608A/zh active Pending
- 2020-02-28 KR KR1020257032361A patent/KR20250152104A/ko active Pending
- 2020-03-02 TW TW109106698A patent/TWI856065B/zh active
- 2020-03-02 TW TW113132304A patent/TWI895084B/zh active
-
2021
- 2021-10-05 US US17/494,089 patent/US11662919B2/en active Active
-
2024
- 2024-06-17 JP JP2024097486A patent/JP7703748B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189868A1 (en) * | 2002-04-09 | 2003-10-09 | Riesenman Robert J. | Early power-down digital memory device and method |
| US20170004869A1 (en) * | 2015-07-01 | 2017-01-05 | Samsung Electronics Co., Ltd. | Semiconductor memory device having clock generation scheme based on command |
| WO2017011351A1 (en) * | 2015-07-14 | 2017-01-19 | Qualcomm Incorporated | Low-power clocking for a high-speed memory interface |
| WO2018081746A1 (en) * | 2016-10-31 | 2018-05-03 | Intel Corporation | Applying chip select for memory device identification and power management control |
Non-Patent Citations (1)
| Title |
|---|
| MT46H32M16LF: "Mobile Low-Power DDR SDRAM", 1 January 2014 (2014-01-01), XP055695075, Retrieved from the Internet <URL:https://www.micron.com/-/media/client/global/documents/products/data-sheet/dram/mobile-dram/low-power-dram/lpddr/60-series/t67m_512mb_mobile_lpddr_sdram.pdf> [retrieved on 20200513] * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7595228B1 (ja) | 2021-12-08 | 2024-12-05 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 同期メモリのための読み取りクロック開始及び停止 |
| JP2025500782A (ja) * | 2021-12-08 | 2025-01-15 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 同期メモリのための読み取りクロック開始及び停止 |
| JP2025500783A (ja) * | 2021-12-08 | 2025-01-15 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 同期メモリのための読み取りクロック開始及び停止 |
| JP7802936B2 (ja) | 2021-12-08 | 2026-01-20 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 同期メモリのための読み取りクロック開始及び停止 |
| JP2023122869A (ja) * | 2022-02-24 | 2023-09-05 | キヤノン株式会社 | メモリ制御装置、メモリ制御装置の制御方法およびプログラム |
| JP7799507B2 (ja) | 2022-02-24 | 2026-01-15 | キヤノン株式会社 | メモリ制御装置、メモリ制御装置の制御方法およびプログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202101193A (zh) | 2021-01-01 |
| US20220027067A1 (en) | 2022-01-27 |
| TWI856065B (zh) | 2024-09-21 |
| EP3931830B1 (en) | 2023-12-13 |
| US20200278802A1 (en) | 2020-09-03 |
| KR20250152104A (ko) | 2025-10-22 |
| BR112021016211A2 (pt) | 2021-10-05 |
| KR102867872B1 (ko) | 2025-10-02 |
| JP7703748B2 (ja) | 2025-07-07 |
| EP4290521A2 (en) | 2023-12-13 |
| JP7508470B2 (ja) | 2024-07-01 |
| EP3931830A1 (en) | 2022-01-05 |
| ES2967120T3 (es) | 2024-04-26 |
| EP4290521B1 (en) | 2026-05-06 |
| JP2024133504A (ja) | 2024-10-02 |
| EP4290521A3 (en) | 2024-03-13 |
| KR20210131342A (ko) | 2021-11-02 |
| US11662919B2 (en) | 2023-05-30 |
| CN113519025A (zh) | 2021-10-19 |
| TW202503505A (zh) | 2025-01-16 |
| US11175836B2 (en) | 2021-11-16 |
| JP2022522012A (ja) | 2022-04-13 |
| EP3931830C0 (en) | 2023-12-13 |
| CN113519025B (zh) | 2025-11-04 |
| TWI895084B (zh) | 2025-08-21 |
| CN121300608A (zh) | 2026-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11662919B2 (en) | Enhanced data clock operations in memory | |
| US7660183B2 (en) | Low power memory device | |
| US8804442B2 (en) | Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device | |
| TWI455149B (zh) | 改善暫存器型記憶體模組的操作之方法及系統 | |
| US11295803B2 (en) | Memory with dynamic voltage scaling | |
| US10573371B2 (en) | Systems and methods for controlling data strobe signals during read operations | |
| US11783885B2 (en) | Interactive memory self-refresh control | |
| US11493949B2 (en) | Clocking scheme to receive data | |
| HK40057206A (en) | Enhanced data clock operations in memory | |
| BR112021016211B1 (pt) | Operações de relógio de dados melhorado na memória |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20715575 Country of ref document: EP Kind code of ref document: A1 |
|
| REG | Reference to national code |
Ref country code: BR Ref legal event code: B01A Ref document number: 112021016211 Country of ref document: BR |
|
| ENP | Entry into the national phase |
Ref document number: 2021550236 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 2020715575 Country of ref document: EP |
|
| ENP | Entry into the national phase |
Ref document number: 112021016211 Country of ref document: BR Kind code of ref document: A2 Effective date: 20210817 |
|
| WWG | Wipo information: grant in national office |
Ref document number: 202147034888 Country of ref document: IN |
|
| WWP | Wipo information: published in national office |
Ref document number: 1020257032361 Country of ref document: KR |
|
| WWG | Wipo information: grant in national office |
Ref document number: 202080017983.3 Country of ref document: CN |