CN113519025B - 存储器中的增强数据时钟操作 - Google Patents

存储器中的增强数据时钟操作

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Publication number
CN113519025B
CN113519025B CN202080017983.3A CN202080017983A CN113519025B CN 113519025 B CN113519025 B CN 113519025B CN 202080017983 A CN202080017983 A CN 202080017983A CN 113519025 B CN113519025 B CN 113519025B
Authority
CN
China
Prior art keywords
data clock
memory
command
host
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080017983.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN113519025A (zh
Inventor
J·徐
D·T·丘
M·H·罗
S·托祖尔
R·库玛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to CN202511668146.8A priority Critical patent/CN121300608A/zh
Publication of CN113519025A publication Critical patent/CN113519025A/zh
Application granted granted Critical
Publication of CN113519025B publication Critical patent/CN113519025B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

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    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625Power saving in storage systems
    • GPHYSICS
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    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/3237Power saving characterised by the action undertaken by disabling clock generation or distribution
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    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
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    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
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    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
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    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066Output synchronization
    • GPHYSICS
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    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
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    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109Control signal input circuits
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    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093Input synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/225Clock input buffers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1028Power efficiency
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/45Caching of specific data in cache memory
    • GPHYSICS
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    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
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    • G11C2207/2227Standby or low power modes
    • GPHYSICS
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    • G11CSTATIC STORES
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    • GPHYSICS
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    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • GPHYSICS
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    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14Implementation of control logic, e.g. test mode decoders
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    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012Marginal testing, e.g. race, voltage or current testing of timing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Memory System (AREA)
  • Power Sources (AREA)
  • Dram (AREA)
  • Communication Control (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
CN202080017983.3A 2019-03-01 2020-02-28 存储器中的增强数据时钟操作 Active CN113519025B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511668146.8A CN121300608A (zh) 2019-03-01 2020-02-28 存储器中的增强数据时钟操作

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962812689P 2019-03-01 2019-03-01
US62/812,689 2019-03-01
US16/803,977 US11175836B2 (en) 2019-03-01 2020-02-27 Enhanced data clock operations in memory
US16/803,977 2020-02-27
PCT/US2020/020374 WO2020180677A1 (en) 2019-03-01 2020-02-28 Enhanced data clock operations in memory

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CN113519025B true CN113519025B (zh) 2025-11-04

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CN202511668146.8A Pending CN121300608A (zh) 2019-03-01 2020-02-28 存储器中的增强数据时钟操作

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US (2) US11175836B2 (https=)
EP (2) EP4290521B1 (https=)
JP (2) JP7508470B2 (https=)
KR (2) KR102867872B1 (https=)
CN (2) CN113519025B (https=)
ES (1) ES2967120T3 (https=)
TW (2) TWI856065B (https=)
WO (1) WO2020180677A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11175836B2 (en) 2019-03-01 2021-11-16 Qualcomm Incorporated Enhanced data clock operations in memory
US11587633B2 (en) * 2020-06-23 2023-02-21 Micron Technology, Inc. Direct testing of in-package memory
US12061795B2 (en) * 2021-05-07 2024-08-13 Micron Technologies, Inc. Repair element availability communication
US11914532B2 (en) * 2021-08-31 2024-02-27 Apple Inc. Memory device bandwidth optimization
US12315551B2 (en) * 2021-12-08 2025-05-27 Advanced Micro Devices, Inc. Read clock start and stop for synchronous memories
JP7799507B2 (ja) * 2022-02-24 2026-01-15 キヤノン株式会社 メモリ制御装置、メモリ制御装置の制御方法およびプログラム
KR20230127856A (ko) 2022-02-25 2023-09-01 에스케이하이닉스 주식회사 효율적으로 클럭 동기를 수행할 수 있는 메모리 시스템
TWI846376B (zh) * 2022-03-23 2024-06-21 南韓商三星電子股份有限公司 記憶體裝置、操作記憶體裝置的方法、操作記憶體控制器的方法
US12456508B2 (en) 2022-03-23 2025-10-28 Samsung Electronics Co., Ltd. Memory device, operation method of a memory device, and operation method of a memory controller
KR102897879B1 (ko) * 2022-07-08 2025-12-08 창신 메모리 테크놀로지즈 아이엔씨 제어 장치, 메모리, 신호 처리 방법 및 전자 기기
US12542165B2 (en) * 2022-10-13 2026-02-03 SK Hynix Inc. Semiconductor system
WO2025085054A1 (en) * 2023-10-17 2025-04-24 Google Llc Lpddr5 dram wck clock power saving through command buffering

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135375B1 (en) * 2012-11-30 2015-09-15 Cadence Design Systems, Inc. Methods for construction and optimization of a clock tree plan for reduced power consumption

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4060527B2 (ja) * 2000-12-19 2008-03-12 富士通株式会社 クロック同期型ダイナミックメモリ
US6898683B2 (en) 2000-12-19 2005-05-24 Fujitsu Limited Clock synchronized dynamic memory and clock synchronized integrated circuit
US6781911B2 (en) 2002-04-09 2004-08-24 Intel Corporation Early power-down digital memory device and method
US6650594B1 (en) * 2002-07-12 2003-11-18 Samsung Electronics Co., Ltd. Device and method for selecting power down exit
KR100605606B1 (ko) * 2003-05-29 2006-07-28 주식회사 하이닉스반도체 반도체 메모리 장치의 동기식 셀프 리프레쉬 제어 방법 및제어 회로
TWI410970B (zh) * 2005-07-29 2013-10-01 Ibm 控制記憶體的方法及記憶體系統
US8964779B2 (en) * 2007-11-30 2015-02-24 Infineon Technologies Ag Device and method for electronic controlling
JP4962396B2 (ja) * 2008-04-23 2012-06-27 日本電気株式会社 パケット処理装置
JP5060574B2 (ja) * 2010-03-16 2012-10-31 株式会社東芝 メモリシステム
WO2012021380A2 (en) 2010-08-13 2012-02-16 Rambus Inc. Fast-wake memory
JP5642524B2 (ja) 2010-12-13 2014-12-17 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体装置
WO2012122381A2 (en) 2011-03-09 2012-09-13 Rambus Inc. Power-management for integrated circuits
JP5819678B2 (ja) * 2011-08-30 2015-11-24 ルネサスエレクトロニクス株式会社 Usbハブ及びusbハブの制御方法
WO2013095551A1 (en) * 2011-12-22 2013-06-27 Intel Corporation Mechanisms for clock gating
US9658642B2 (en) 2013-07-01 2017-05-23 Intel Corporation Timing control for unmatched signal receiver
KR102272259B1 (ko) 2015-07-01 2021-07-06 삼성전자주식회사 커맨드 연동 클럭 생성 스키마를 갖는 반도체 메모리 장치
US10169262B2 (en) 2015-07-14 2019-01-01 Qualcomm Incorporated Low-power clocking for a high-speed memory interface
US10186309B2 (en) * 2016-06-29 2019-01-22 Samsung Electronics Co., Ltd. Methods of operating semiconductor memory devices and semiconductor memory devices
KR20180034738A (ko) * 2016-09-26 2018-04-05 삼성전자주식회사 메모리 장치 및 그것의 분주 클록 보정 방법
WO2018081746A1 (en) 2016-10-31 2018-05-03 Intel Corporation Applying chip select for memory device identification and power management control
KR20180069960A (ko) * 2016-12-15 2018-06-26 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10210918B2 (en) * 2017-02-28 2019-02-19 Micron Technology, Inc. Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal
KR102679157B1 (ko) * 2018-10-30 2024-06-27 삼성전자주식회사 모드 레지스터 쓰기 명령을 이용하여 쓰기 클럭의 듀티 사이클의 트레이닝을 수행하는 시스템 온 칩, 시스템 온 칩의 동작 방법, 및 시스템 온 칩을 포함하는 전자 장치
US11175836B2 (en) 2019-03-01 2021-11-16 Qualcomm Incorporated Enhanced data clock operations in memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9135375B1 (en) * 2012-11-30 2015-09-15 Cadence Design Systems, Inc. Methods for construction and optimization of a clock tree plan for reduced power consumption

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Publication number Publication date
TW202101193A (zh) 2021-01-01
US20220027067A1 (en) 2022-01-27
TWI856065B (zh) 2024-09-21
EP3931830B1 (en) 2023-12-13
US20200278802A1 (en) 2020-09-03
KR20250152104A (ko) 2025-10-22
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