JP7498823B2 - 薄型膜処理プロセス - Google Patents
薄型膜処理プロセス Download PDFInfo
- Publication number
- JP7498823B2 JP7498823B2 JP2023050737A JP2023050737A JP7498823B2 JP 7498823 B2 JP7498823 B2 JP 7498823B2 JP 2023050737 A JP2023050737 A JP 2023050737A JP 2023050737 A JP2023050737 A JP 2023050737A JP 7498823 B2 JP7498823 B2 JP 7498823B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- film
- ions
- process gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 139
- 230000008569 process Effects 0.000 title claims description 100
- 238000011282 treatment Methods 0.000 title description 31
- 239000012528 membrane Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 102
- 239000007789 gas Substances 0.000 claims description 64
- 150000002500 ions Chemical class 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 229910052734 helium Inorganic materials 0.000 claims description 29
- 239000001307 helium Substances 0.000 claims description 29
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 131
- 238000000231 atomic layer deposition Methods 0.000 description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 20
- 239000010409 thin film Substances 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 11
- -1 helium ions Chemical class 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000000427 thin-film deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000008246 gaseous mixture Substances 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005524 ceramic coating Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 201000011452 Adrenoleukodystrophy Diseases 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 208000010796 X-linked adrenoleukodystrophy Diseases 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001636 atomic emission spectroscopy Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012631 diagnostic technique Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (12)
- 半導体装置において膜を改変する方法であって、
酸化ケイ素を含むゲート酸化物を含んだ基板を、約20℃と約500℃の間の第1の温度に加熱することと、
プロセスガスに高周波(RF)エネルギーが印加されている間に、前記プロセスガスから形成されるプラズマに、前記基板の表面に配置された前記ゲート酸化物を曝露することであって、前記プロセスガスは、ヘリウム、酸素またはそれらの組み合わせを含む、曝露することと、
前記プラズマからのイオンを前記ゲート酸化物に衝突させ、前記プラズマからの前記イオンを前記ゲート酸化物内に注入することと、
前記RFエネルギーのRF電力パルス周期の調整、チャンバ圧力の変更、前記RFエネルギーを生成するRF電力の調整、またはそれらの組み合わせによって、プラズマシースのシース電圧を調整することと
を含む方法。 - 前記RFエネルギーが、前記プラズマ内に形成された前記イオンの少なくとも一部に、約2eVと約30eVの間のエネルギーを与える、請求項1に記載の方法。
- 前記プラズマが、処理中の前記ゲート酸化物の表面全体に、1立方センチメートル(cm3)当たり約1×1010イオンと1×1012イオンの間の平均イオン密度を有する、請求項1に記載の方法。
- 前記RF電力が、約50Wから約4kWに制御される、請求項1に記載の方法。
- 前記チャンバ圧力が、約5から約200ミリトールに制御される、請求項1に記載の方法。
- 前記プロセスガスがアルゴンまたは窒素をさらに含む、請求項1に記載の方法。
- 前記ゲート酸化物が第1の処理チャンバ内で成長させられ、
前記基板の前記表面に配置された前記ゲート酸化物を曝露することが、第2の処理チャンバ内で実施され、
前記第1の処理チャンバおよび前記第2の処理チャンバは、前記基板を空気に曝露することなく前記第1の処理チャンバと前記第2の処理チャンバとの間で移送できるように構成されたクラスタツールに結合されている、請求項1に記載の方法。 - 半導体装置において膜を改変する方法であって、
酸化ケイ素を含む基板を、約20℃と約500℃の間の第1の温度に加熱することと、
プロセスガスに高周波(RF)エネルギーが印加されている間に、前記プロセスガスから形成されるプラズマに、前記基板の表面に配置された前記酸化ケイ素を曝露することと、
前記プラズマからのイオンを前記酸化ケイ素に衝突させ、前記プラズマからの前記イオンを前記酸化ケイ素内に注入することと、
前記RFエネルギーのRF電力パルス周期の調整、チャンバ圧力の変更、前記RFエネルギーを生成するRF電力の調整、またはそれらの組み合わせによって、シースのシース電圧を調整することであって、前記RF電力は約50Wから約4kWに制御される、調整することと
を含む方法。 - 前記プロセスガスが酸素を含む、請求項8に記載の方法。
- 前記プロセスガスがアルゴンまたは窒素をさらに含む、請求項9に記載の方法。
- 前記チャンバ圧力が、約5から約200ミリトールに制御される、請求項8に記載の方法。
- 前記プラズマが、処理中の前記酸化ケイ素の表面全体に、1立方センチメートル(cm3)当たり約1×1010イオンと1×1012イオンの間の平均イオン密度を有する、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/152,395 US10971357B2 (en) | 2018-10-04 | 2018-10-04 | Thin film treatment process |
US16/152,395 | 2018-10-04 | ||
JP2021518117A JP7254171B2 (ja) | 2018-10-04 | 2019-09-18 | 薄型膜処理プロセス |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021518117A Division JP7254171B2 (ja) | 2018-10-04 | 2019-09-18 | 薄型膜処理プロセス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023098896A JP2023098896A (ja) | 2023-07-11 |
JP7498823B2 true JP7498823B2 (ja) | 2024-06-12 |
Family
ID=70052426
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021518117A Active JP7254171B2 (ja) | 2018-10-04 | 2019-09-18 | 薄型膜処理プロセス |
JP2023050737A Active JP7498823B2 (ja) | 2018-10-04 | 2023-03-28 | 薄型膜処理プロセス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021518117A Active JP7254171B2 (ja) | 2018-10-04 | 2019-09-18 | 薄型膜処理プロセス |
Country Status (5)
Country | Link |
---|---|
US (1) | US10971357B2 (ja) |
JP (2) | JP7254171B2 (ja) |
KR (2) | KR20230079246A (ja) |
TW (3) | TW202333237A (ja) |
WO (1) | WO2020072203A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7222946B2 (ja) * | 2020-03-24 | 2023-02-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
CN112376024B (zh) * | 2020-10-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种氧化物薄膜的制备方法 |
US20220364230A1 (en) * | 2021-05-12 | 2022-11-17 | Applied Materials, Inc. | Pulsing plasma treatment for film densification |
KR20240119078A (ko) * | 2021-12-24 | 2024-08-06 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 |
TWI837617B (zh) * | 2022-03-16 | 2024-04-01 | 南韓商細美事有限公司 | 處理基板之設備及方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003239071A (ja) | 2002-02-14 | 2003-08-27 | Mitsubishi Heavy Ind Ltd | プラズマcvd成膜方法及び装置 |
US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121163A (en) | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
US5926730A (en) | 1997-02-19 | 1999-07-20 | Micron Technology, Inc. | Conductor layer nitridation |
US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
KR20060084988A (ko) * | 2005-01-21 | 2006-07-26 | 삼성전자주식회사 | 2 단계 열처리에 의한 반도체 소자의 커패시터 제조 방법 |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
US20080124946A1 (en) * | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
US7871942B2 (en) | 2008-03-27 | 2011-01-18 | Applied Materials, Inc. | Methods for manufacturing high dielectric constant film |
US8481433B2 (en) | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
US9177787B2 (en) | 2013-03-15 | 2015-11-03 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate |
US9299577B2 (en) * | 2014-01-24 | 2016-03-29 | Applied Materials, Inc. | Methods for etching a dielectric barrier layer in a dual damascene structure |
KR20160009760A (ko) | 2014-07-16 | 2016-01-27 | 피에스케이 주식회사 | 플라즈마 생성 장치, 플라즈마 특성 제어 방법, 및 그를 이용한 기판 처리 장치 |
US9214333B1 (en) | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
JP6587514B2 (ja) * | 2015-11-11 | 2019-10-09 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US10103027B2 (en) | 2016-06-20 | 2018-10-16 | Applied Materials, Inc. | Hydrogenation and nitridization processes for modifying effective oxide thickness of a film |
US10236207B2 (en) | 2016-06-20 | 2019-03-19 | Applied Materials, Inc. | Hydrogenation and nitridization processes for reducing oxygen content in a film |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9870915B1 (en) * | 2016-10-01 | 2018-01-16 | Applied Materials, Inc. | Chemical modification of hardmask films for enhanced etching and selective removal |
-
2018
- 2018-10-04 US US16/152,395 patent/US10971357B2/en active Active
-
2019
- 2019-09-18 WO PCT/US2019/051789 patent/WO2020072203A2/en active Application Filing
- 2019-09-18 KR KR1020237017710A patent/KR20230079246A/ko not_active Application Discontinuation
- 2019-09-18 JP JP2021518117A patent/JP7254171B2/ja active Active
- 2019-09-18 KR KR1020217013524A patent/KR102538040B1/ko active IP Right Grant
- 2019-09-26 TW TW112111639A patent/TW202333237A/zh unknown
- 2019-09-26 TW TW110125085A patent/TWI819330B/zh active
- 2019-09-26 TW TW108134784A patent/TWI735957B/zh active
-
2023
- 2023-03-28 JP JP2023050737A patent/JP7498823B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003239071A (ja) | 2002-02-14 | 2003-08-27 | Mitsubishi Heavy Ind Ltd | プラズマcvd成膜方法及び装置 |
US20130217241A1 (en) | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
Also Published As
Publication number | Publication date |
---|---|
WO2020072203A2 (en) | 2020-04-09 |
TW202143331A (zh) | 2021-11-16 |
US20200111659A1 (en) | 2020-04-09 |
TWI735957B (zh) | 2021-08-11 |
JP2022504091A (ja) | 2022-01-13 |
JP2023098896A (ja) | 2023-07-11 |
TW202333237A (zh) | 2023-08-16 |
US10971357B2 (en) | 2021-04-06 |
KR20210055103A (ko) | 2021-05-14 |
TWI819330B (zh) | 2023-10-21 |
TW202029344A (zh) | 2020-08-01 |
KR20230079246A (ko) | 2023-06-05 |
KR102538040B1 (ko) | 2023-05-30 |
WO2020072203A3 (en) | 2020-05-14 |
JP7254171B2 (ja) | 2023-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7498823B2 (ja) | 薄型膜処理プロセス | |
US11676812B2 (en) | Method for forming silicon nitride film selectively on top/bottom portions | |
CN107104036B (zh) | 用于在沟槽侧壁或平整表面上选择性形成氮化硅膜的方法 | |
TWI657499B (zh) | 蝕刻方法 | |
US7645709B2 (en) | Methods for low temperature oxidation of a semiconductor device | |
TWI557799B (zh) | 用於半導體裝置之氧化的方法 | |
EP1815505A2 (en) | Tensile and compressive stressed materials for semiconductors | |
US10256076B2 (en) | Substrate processing apparatus and methods | |
US8277906B2 (en) | Method of processing a substrate | |
TW200931515A (en) | Method of plasma treatment and plasma treatment apparatus | |
JP7233173B2 (ja) | トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法 | |
TWI847050B (zh) | 薄膜層的脈衝電漿沉積 | |
TWI780806B (zh) | 對工件的部分進行鈍化的方法 | |
TWI837338B (zh) | 基板處理方法及基板處理裝置 | |
JP7486442B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
KR102696249B1 (ko) | 트렌치들의 측벽들 또는 평탄 표면들 상에 선택적으로 실리콘 질화물 막을 형성하는 방법 | |
TW202412066A (zh) | 低溫氧化矽間隙填充 | |
KR20220081829A (ko) | 실리콘 함유막의 에칭 방법 및 이를 포함한 반도체 디바이스의 제조방법 | |
TW202230509A (zh) | 薄膜層的脈衝電漿沉積 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230425 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230425 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240402 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240501 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240531 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7498823 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |