JP7483020B2 - レーザー加工装置、及びレーザー加工方法 - Google Patents

レーザー加工装置、及びレーザー加工方法 Download PDF

Info

Publication number
JP7483020B2
JP7483020B2 JP2022547504A JP2022547504A JP7483020B2 JP 7483020 B2 JP7483020 B2 JP 7483020B2 JP 2022547504 A JP2022547504 A JP 2022547504A JP 2022547504 A JP2022547504 A JP 2022547504A JP 7483020 B2 JP7483020 B2 JP 7483020B2
Authority
JP
Japan
Prior art keywords
substrate
main surface
laser beam
single crystal
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022547504A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022054611A1 (https=
JPWO2022054611A5 (https=
Inventor
陽平 山下
康隆 溝本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2022054611A1 publication Critical patent/JPWO2022054611A1/ja
Publication of JPWO2022054611A5 publication Critical patent/JPWO2022054611A5/ja
Priority to JP2024073839A priority Critical patent/JP7765158B2/ja
Application granted granted Critical
Publication of JP7483020B2 publication Critical patent/JP7483020B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2022547504A 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法 Active JP7483020B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024073839A JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020151606 2020-09-09
JP2020151606 2020-09-09
PCT/JP2021/031569 WO2022054611A1 (ja) 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024073839A Division JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Publications (3)

Publication Number Publication Date
JPWO2022054611A1 JPWO2022054611A1 (https=) 2022-03-17
JPWO2022054611A5 JPWO2022054611A5 (https=) 2023-05-12
JP7483020B2 true JP7483020B2 (ja) 2024-05-14

Family

ID=80631646

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022547504A Active JP7483020B2 (ja) 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法
JP2024073839A Active JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024073839A Active JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Country Status (4)

Country Link
US (1) US20240030021A1 (https=)
JP (2) JP7483020B2 (https=)
TW (1) TWI904225B (https=)
WO (1) WO2022054611A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025258398A1 (ja) * 2024-06-11 2025-12-18 東京エレクトロン株式会社 基板処理方法および基板処理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202442353A (zh) * 2023-04-07 2024-11-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JPWO2024210026A1 (https=) * 2023-04-07 2024-10-10
JPWO2024209992A1 (https=) * 2023-04-07 2024-10-10
WO2025041188A1 (ja) * 2023-08-18 2025-02-27 株式会社ニコン 加工システム、計測装置及び加工方法
WO2025094667A1 (ja) * 2023-11-02 2025-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203823A (ja) 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
JP2007014990A (ja) 2005-07-07 2007-01-25 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP2014091133A (ja) 2012-10-31 2014-05-19 Mitsubishi Heavy Ind Ltd レーザ溶断装置および加工方法
JP2015199173A (ja) 2014-04-09 2015-11-12 株式会社ディスコ 研削装置
WO2016125841A1 (ja) 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504303A (en) * 1994-12-12 1996-04-02 Saint-Gobain/Norton Industrial Ceramics Corp. Laser finishing and measurement of diamond surface roughness
JPH09199454A (ja) * 1996-01-16 1997-07-31 Toyoda Mach Works Ltd シリコンウエハ加工方法および加工装置
JP4060405B2 (ja) * 1997-08-19 2008-03-12 浜松ホトニクス株式会社 半導体ウェハの製造方法
JPH1167700A (ja) * 1997-08-22 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JP2002329690A (ja) 2001-04-27 2002-11-15 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの製造方法
JP2003045828A (ja) 2001-08-01 2003-02-14 Sony Corp 半導体処理方法および処理装置
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
JP5735260B2 (ja) * 2010-11-10 2015-06-17 株式会社ディスコ サファイア基板の加工方法
JP2014167996A (ja) * 2013-02-28 2014-09-11 Ebara Corp 研磨装置および研磨方法
US20180126485A1 (en) 2016-11-10 2018-05-10 Goodrich Corporation Surface finishing for glass components using a laser
CN107452607A (zh) * 2017-08-02 2017-12-08 武汉大学 一种晶圆激光研磨系统及方法
WO2019220666A1 (ja) 2018-05-17 2019-11-21 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
JP7133633B2 (ja) 2018-09-13 2022-09-08 東京エレクトロン株式会社 処理システム及び処理方法
CN109693039B (zh) * 2018-12-27 2021-07-16 北京航空航天大学 一种硅片表面激光抛光的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203823A (ja) 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
JP2007014990A (ja) 2005-07-07 2007-01-25 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP2014091133A (ja) 2012-10-31 2014-05-19 Mitsubishi Heavy Ind Ltd レーザ溶断装置および加工方法
JP2015199173A (ja) 2014-04-09 2015-11-12 株式会社ディスコ 研削装置
WO2016125841A1 (ja) 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025258398A1 (ja) * 2024-06-11 2025-12-18 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
JPWO2022054611A1 (https=) 2022-03-17
WO2022054611A1 (ja) 2022-03-17
TW202216337A (zh) 2022-05-01
JP7765158B2 (ja) 2025-11-06
TWI904225B (zh) 2025-11-11
US20240030021A1 (en) 2024-01-25
JP2024097842A (ja) 2024-07-19

Similar Documents

Publication Publication Date Title
JP7483020B2 (ja) レーザー加工装置、及びレーザー加工方法
JP7655651B2 (ja) 基板加工方法、及び基板加工装置
JP7118245B2 (ja) 基板処理システム、および基板処理方法
JP7347939B2 (ja) シリコンウェハの表面の研削修復装置及び研削修復方法
JP7359980B2 (ja) シリコンウェハの研削後表面のレーザー照射修復装置及び修復方法
US20190039185A1 (en) Laser processing apparatus
JPWO2022054611A5 (https=)
WO2024210026A1 (ja) 基板処理方法および基板処理装置
TW202604664A (zh) 雷射加工裝置及雷射加工方法
JP7802178B2 (ja) 基板処理方法、および基板処理装置
WO2019239801A1 (ja) 基板処理システム、および基板処理方法
JP7685345B2 (ja) ウェーハのテラス加工方法及びそれに用いる加工装置
WO2024210048A1 (ja) 基板処理方法および基板処理装置
WO2024209992A1 (ja) 基板処理方法および基板処理装置
WO2025258398A1 (ja) 基板処理方法および基板処理装置
WO2025047207A1 (ja) 基板処理方法および基板処理システム
KR20240029509A (ko) 웨이퍼의 분할 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240430

R150 Certificate of patent or registration of utility model

Ref document number: 7483020

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150