TWI904225B - 雷射加工裝置及雷射加工方法 - Google Patents

雷射加工裝置及雷射加工方法

Info

Publication number
TWI904225B
TWI904225B TW110131980A TW110131980A TWI904225B TW I904225 B TWI904225 B TW I904225B TW 110131980 A TW110131980 A TW 110131980A TW 110131980 A TW110131980 A TW 110131980A TW I904225 B TWI904225 B TW I904225B
Authority
TW
Taiwan
Prior art keywords
substrate
laser processing
module
laser
laser light
Prior art date
Application number
TW110131980A
Other languages
English (en)
Chinese (zh)
Other versions
TW202216337A (zh
Inventor
山下陽平
溝本康隆
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202216337A publication Critical patent/TW202216337A/zh
Application granted granted Critical
Publication of TWI904225B publication Critical patent/TWI904225B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW110131980A 2020-09-09 2021-08-30 雷射加工裝置及雷射加工方法 TWI904225B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-151606 2020-09-09
JP2020151606 2020-09-09

Publications (2)

Publication Number Publication Date
TW202216337A TW202216337A (zh) 2022-05-01
TWI904225B true TWI904225B (zh) 2025-11-11

Family

ID=80631646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110131980A TWI904225B (zh) 2020-09-09 2021-08-30 雷射加工裝置及雷射加工方法

Country Status (4)

Country Link
US (1) US20240030021A1 (https=)
JP (2) JP7483020B2 (https=)
TW (1) TWI904225B (https=)
WO (1) WO2022054611A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202442353A (zh) * 2023-04-07 2024-11-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JPWO2024210026A1 (https=) * 2023-04-07 2024-10-10
JPWO2024209992A1 (https=) * 2023-04-07 2024-10-10
WO2025041188A1 (ja) * 2023-08-18 2025-02-27 株式会社ニコン 加工システム、計測装置及び加工方法
WO2025094667A1 (ja) * 2023-11-02 2025-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2025258398A1 (ja) * 2024-06-11 2025-12-18 東京エレクトロン株式会社 基板処理方法および基板処理装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199454A (ja) * 1996-01-16 1997-07-31 Toyoda Mach Works Ltd シリコンウエハ加工方法および加工装置
JPH1167777A (ja) * 1997-08-19 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JPH1167700A (ja) * 1997-08-22 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JP2002203823A (ja) * 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
JP2012101321A (ja) * 2010-11-10 2012-05-31 Disco Corp サファイア基板の加工方法
TW201442092A (zh) * 2013-02-28 2014-11-01 荏原製作所股份有限公司 研磨裝置及研磨方法
WO2016125841A1 (ja) * 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法
CN107452607A (zh) * 2017-08-02 2017-12-08 武汉大学 一种晶圆激光研磨系统及方法
CN109693039A (zh) * 2018-12-27 2019-04-30 北京航空航天大学 一种硅片表面激光抛光的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504303A (en) * 1994-12-12 1996-04-02 Saint-Gobain/Norton Industrial Ceramics Corp. Laser finishing and measurement of diamond surface roughness
JP2002329690A (ja) 2001-04-27 2002-11-15 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの製造方法
JP2003045828A (ja) 2001-08-01 2003-02-14 Sony Corp 半導体処理方法および処理装置
JP2007014990A (ja) * 2005-07-07 2007-01-25 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP6125197B2 (ja) * 2012-10-31 2017-05-10 三菱重工業株式会社 レーザ溶断装置および加工方法
JP6358835B2 (ja) * 2014-04-09 2018-07-18 株式会社ディスコ 研削装置
US20180126485A1 (en) 2016-11-10 2018-05-10 Goodrich Corporation Surface finishing for glass components using a laser
WO2019220666A1 (ja) 2018-05-17 2019-11-21 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
JP7133633B2 (ja) 2018-09-13 2022-09-08 東京エレクトロン株式会社 処理システム及び処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199454A (ja) * 1996-01-16 1997-07-31 Toyoda Mach Works Ltd シリコンウエハ加工方法および加工装置
JPH1167777A (ja) * 1997-08-19 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JPH1167700A (ja) * 1997-08-22 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JP2002203823A (ja) * 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
JP2012101321A (ja) * 2010-11-10 2012-05-31 Disco Corp サファイア基板の加工方法
TW201442092A (zh) * 2013-02-28 2014-11-01 荏原製作所股份有限公司 研磨裝置及研磨方法
WO2016125841A1 (ja) * 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法
CN107452607A (zh) * 2017-08-02 2017-12-08 武汉大学 一种晶圆激光研磨系统及方法
CN109693039A (zh) * 2018-12-27 2019-04-30 北京航空航天大学 一种硅片表面激光抛光的方法

Also Published As

Publication number Publication date
JP7483020B2 (ja) 2024-05-14
JPWO2022054611A1 (https=) 2022-03-17
WO2022054611A1 (ja) 2022-03-17
TW202216337A (zh) 2022-05-01
JP7765158B2 (ja) 2025-11-06
US20240030021A1 (en) 2024-01-25
JP2024097842A (ja) 2024-07-19

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