JPWO2022054611A1 - - Google Patents

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Publication number
JPWO2022054611A1
JPWO2022054611A1 JP2022547504A JP2022547504A JPWO2022054611A1 JP WO2022054611 A1 JPWO2022054611 A1 JP WO2022054611A1 JP 2022547504 A JP2022547504 A JP 2022547504A JP 2022547504 A JP2022547504 A JP 2022547504A JP WO2022054611 A1 JPWO2022054611 A1 JP WO2022054611A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022547504A
Other languages
Japanese (ja)
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JP7483020B2 (ja
JPWO2022054611A5 (https=
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Publication of JPWO2022054611A1 publication Critical patent/JPWO2022054611A1/ja
Publication of JPWO2022054611A5 publication Critical patent/JPWO2022054611A5/ja
Priority to JP2024073839A priority Critical patent/JP7765158B2/ja
Application granted granted Critical
Publication of JP7483020B2 publication Critical patent/JP7483020B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2022547504A 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法 Active JP7483020B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024073839A JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020151606 2020-09-09
JP2020151606 2020-09-09
PCT/JP2021/031569 WO2022054611A1 (ja) 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024073839A Division JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Publications (3)

Publication Number Publication Date
JPWO2022054611A1 true JPWO2022054611A1 (https=) 2022-03-17
JPWO2022054611A5 JPWO2022054611A5 (https=) 2023-05-12
JP7483020B2 JP7483020B2 (ja) 2024-05-14

Family

ID=80631646

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022547504A Active JP7483020B2 (ja) 2020-09-09 2021-08-27 レーザー加工装置、及びレーザー加工方法
JP2024073839A Active JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024073839A Active JP7765158B2 (ja) 2020-09-09 2024-04-30 レーザー加工装置、及びレーザー加工方法

Country Status (4)

Country Link
US (1) US20240030021A1 (https=)
JP (2) JP7483020B2 (https=)
TW (1) TWI904225B (https=)
WO (1) WO2022054611A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202442353A (zh) * 2023-04-07 2024-11-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JPWO2024210026A1 (https=) * 2023-04-07 2024-10-10
JPWO2024209992A1 (https=) * 2023-04-07 2024-10-10
WO2025041188A1 (ja) * 2023-08-18 2025-02-27 株式会社ニコン 加工システム、計測装置及び加工方法
WO2025094667A1 (ja) * 2023-11-02 2025-05-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2025258398A1 (ja) * 2024-06-11 2025-12-18 東京エレクトロン株式会社 基板処理方法および基板処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167777A (ja) * 1997-08-19 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JPH1167700A (ja) * 1997-08-22 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JP2002203823A (ja) * 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
JP2007014990A (ja) * 2005-07-07 2007-01-25 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP2014091133A (ja) * 2012-10-31 2014-05-19 Mitsubishi Heavy Ind Ltd レーザ溶断装置および加工方法
JP2015199173A (ja) * 2014-04-09 2015-11-12 株式会社ディスコ 研削装置
WO2016125841A1 (ja) * 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504303A (en) * 1994-12-12 1996-04-02 Saint-Gobain/Norton Industrial Ceramics Corp. Laser finishing and measurement of diamond surface roughness
JPH09199454A (ja) * 1996-01-16 1997-07-31 Toyoda Mach Works Ltd シリコンウエハ加工方法および加工装置
JP2002329690A (ja) 2001-04-27 2002-11-15 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの製造方法
JP2003045828A (ja) 2001-08-01 2003-02-14 Sony Corp 半導体処理方法および処理装置
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
JP5735260B2 (ja) * 2010-11-10 2015-06-17 株式会社ディスコ サファイア基板の加工方法
JP2014167996A (ja) * 2013-02-28 2014-09-11 Ebara Corp 研磨装置および研磨方法
US20180126485A1 (en) 2016-11-10 2018-05-10 Goodrich Corporation Surface finishing for glass components using a laser
CN107452607A (zh) * 2017-08-02 2017-12-08 武汉大学 一种晶圆激光研磨系统及方法
WO2019220666A1 (ja) 2018-05-17 2019-11-21 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
JP7133633B2 (ja) 2018-09-13 2022-09-08 東京エレクトロン株式会社 処理システム及び処理方法
CN109693039B (zh) * 2018-12-27 2021-07-16 北京航空航天大学 一种硅片表面激光抛光的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167777A (ja) * 1997-08-19 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JPH1167700A (ja) * 1997-08-22 1999-03-09 Hamamatsu Photonics Kk 半導体ウェハの製造方法
JP2002203823A (ja) * 2000-06-29 2002-07-19 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法および半導体ウエーハ
JP2007014990A (ja) * 2005-07-07 2007-01-25 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP2014091133A (ja) * 2012-10-31 2014-05-19 Mitsubishi Heavy Ind Ltd レーザ溶断装置および加工方法
JP2015199173A (ja) * 2014-04-09 2015-11-12 株式会社ディスコ 研削装置
WO2016125841A1 (ja) * 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法

Also Published As

Publication number Publication date
JP7483020B2 (ja) 2024-05-14
WO2022054611A1 (ja) 2022-03-17
TW202216337A (zh) 2022-05-01
JP7765158B2 (ja) 2025-11-06
TWI904225B (zh) 2025-11-11
US20240030021A1 (en) 2024-01-25
JP2024097842A (ja) 2024-07-19

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