JP7471513B2 - 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法 - Google Patents

診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法 Download PDF

Info

Publication number
JP7471513B2
JP7471513B2 JP2023512208A JP2023512208A JP7471513B2 JP 7471513 B2 JP7471513 B2 JP 7471513B2 JP 2023512208 A JP2023512208 A JP 2023512208A JP 2023512208 A JP2023512208 A JP 2023512208A JP 7471513 B2 JP7471513 B2 JP 7471513B2
Authority
JP
Japan
Prior art keywords
temperature data
diagnostic device
change
sample
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023512208A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023175661A1 (https=
Inventor
普社 趙
涼次 朝倉
誠浩 角屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2023175661A1 publication Critical patent/JPWO2023175661A1/ja
Priority to JP2024062447A priority Critical patent/JP7796794B2/ja
Application granted granted Critical
Publication of JP7471513B2 publication Critical patent/JP7471513B2/ja
Priority to JP2025108667A priority patent/JP2025126302A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2023512208A 2022-03-14 2022-03-14 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法 Active JP7471513B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024062447A JP7796794B2 (ja) 2022-03-14 2024-04-09 診断装置、半導体装置製造システムおよび診断方法
JP2025108667A JP2025126302A (ja) 2022-03-14 2025-06-27 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/011254 WO2023175661A1 (ja) 2022-03-14 2022-03-14 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024062447A Division JP7796794B2 (ja) 2022-03-14 2024-04-09 診断装置、半導体装置製造システムおよび診断方法

Publications (2)

Publication Number Publication Date
JPWO2023175661A1 JPWO2023175661A1 (https=) 2023-09-21
JP7471513B2 true JP7471513B2 (ja) 2024-04-19

Family

ID=88022812

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2023512208A Active JP7471513B2 (ja) 2022-03-14 2022-03-14 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法
JP2024062447A Active JP7796794B2 (ja) 2022-03-14 2024-04-09 診断装置、半導体装置製造システムおよび診断方法
JP2025108667A Pending JP2025126302A (ja) 2022-03-14 2025-06-27 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024062447A Active JP7796794B2 (ja) 2022-03-14 2024-04-09 診断装置、半導体装置製造システムおよび診断方法
JP2025108667A Pending JP2025126302A (ja) 2022-03-14 2025-06-27 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法

Country Status (6)

Country Link
US (1) US20240321608A1 (https=)
JP (3) JP7471513B2 (https=)
KR (1) KR20230135558A (https=)
CN (1) CN117063065A (https=)
TW (2) TWI849766B (https=)
WO (1) WO2023175661A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100045316A1 (en) 2008-02-29 2010-02-25 Lam Research Corporation Method for inspecting electrostatic chucks with kelvin probe analysis
US20180047607A1 (en) 2014-02-12 2018-02-15 Applied Materials, Inc. Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck
WO2021255784A1 (ja) 2020-06-15 2021-12-23 株式会社日立ハイテク 装置診断装置、装置診断方法、プラズマ処理装置および半導体装置製造システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08141861A (ja) * 1994-11-14 1996-06-04 Fujitsu Ltd 真空チャック装置
JP3556549B2 (ja) * 1999-12-10 2004-08-18 シャープ株式会社 シート抵抗測定器および電子部品製造方法
JP3897344B2 (ja) * 2002-08-23 2007-03-22 株式会社オングストロームテクノロジーズ チャッキング状態検出方法及びプラズマ処理装置
WO2010026893A1 (ja) * 2008-09-04 2010-03-11 株式会社クリエイティブ テクノロジー 静電チャック装置及び基板の吸着状態判別方法
CN103779165B (zh) * 2012-10-19 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体设备及工件位置检测方法
JP6222656B2 (ja) * 2013-07-25 2017-11-01 株式会社クリエイティブテクノロジー センサ一体型吸着チャック及び処理装置
JP6418791B2 (ja) 2014-05-29 2018-11-07 株式会社日立製作所 冷却装置の異常検知システム
KR101809654B1 (ko) * 2014-06-03 2017-12-18 에이피시스템 주식회사 기판 처리 장치 및 그 작동 방법
JP6316703B2 (ja) * 2014-08-19 2018-04-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR102581356B1 (ko) * 2016-08-30 2023-09-21 삼성전자주식회사 기판 처리 장치의 이상 진단 방법 및 이를 수행하기 위한 장치
SG11202001500VA (en) * 2017-08-22 2020-03-30 Shinkawa Kk Mounting apparatus and temperature measurement method
CN111699544B (zh) * 2018-02-14 2024-03-22 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
JP7137943B2 (ja) * 2018-03-20 2022-09-15 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100045316A1 (en) 2008-02-29 2010-02-25 Lam Research Corporation Method for inspecting electrostatic chucks with kelvin probe analysis
US20180047607A1 (en) 2014-02-12 2018-02-15 Applied Materials, Inc. Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck
WO2021255784A1 (ja) 2020-06-15 2021-12-23 株式会社日立ハイテク 装置診断装置、装置診断方法、プラズマ処理装置および半導体装置製造システム

Also Published As

Publication number Publication date
KR20230135558A (ko) 2023-09-25
CN117063065A (zh) 2023-11-14
WO2023175661A1 (ja) 2023-09-21
TW202401001A (zh) 2024-01-01
TW202436868A (zh) 2024-09-16
JP2024088752A (ja) 2024-07-02
TWI849766B (zh) 2024-07-21
US20240321608A1 (en) 2024-09-26
JPWO2023175661A1 (https=) 2023-09-21
JP2025126302A (ja) 2025-08-28
JP7796794B2 (ja) 2026-01-09

Similar Documents

Publication Publication Date Title
US9423334B2 (en) Method of cavitation/flashing detection in or near a process control valve
JP4071449B2 (ja) センサ異常検出方法及びセンサ異常検出装置
CN106017729B (zh) 一种基于统计过程控制的电机温度监控方法
US9929062B2 (en) Abnormality portent detection system and method of manufacturing semiconductor device
JP2010250959A (ja) プラズマ処理装置
KR20200005202A (ko) 기계 학습 기반의 설비 이상 탐지 시스템 및 방법
JP2010283000A (ja) 半導体製造における装置異常の予兆検知方法
TW201727073A (zh) 真空泵之判斷系統及真空泵
CN107783495B (zh) 单元控制系统
JP7471513B2 (ja) 診断装置、半導体製造装置システム、半導体装置製造システムおよび診断方法
JP2021002295A (ja) 異常検知装置、異常検知システム、及び異常検知方法
JP6841980B2 (ja) 装置診断装置、プラズマ処理装置及び装置診断方法
KR102797798B1 (ko) 진단 장치 및 진단 방법 그리고 플라스마 처리 장치 및 반도체 장치 제조 시스템
TW202333073A (zh) 診斷裝置、診斷方法、半導體製造裝置系統及半導體裝置製造系統
JP7453049B2 (ja) 異常予兆監視システム、異常予兆監視方法、及びプログラム
WO2023135904A1 (ja) 基板処理装置管理システム、基板処理装置管理方法および基板処理装置管理プログラム
WO2015040683A1 (ja) センサ健全性判定方法およびセンサ健全性判定装置
US20100063610A1 (en) Method of process modules performance matching
JP7709928B2 (ja) 機器の監視診断装置及びその監視診断方法並びに機器の監視診断システム
WO2026022991A1 (ja) 診断装置、診断方法および半導体デバイス製造システム
TW202606373A (zh) 診斷裝置、診斷方法及半導體部件製造系統
KR20240031891A (ko) 입력 전류에 대한 rms 측정 값을 이용하여 유도전동기의 고장을 진단하는 방법 및 시스템
Munesawa et al. Development of fault diagnosis system using principal component analysis for intelligent operation support system
TW202235895A (zh) 基於包含感測器映射及經觸發之資料登錄的健康狀態而監測、評估及回應的基板處理系統工具

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230217

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240312

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240409

R150 Certificate of patent or registration of utility model

Ref document number: 7471513

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150