JP7470677B2 - テクスチャ化ｔｃｏ層を有する光起電デバイス、およびｔｃｏスタックを作る方法 - Google Patents

テクスチャ化ｔｃｏ層を有する光起電デバイス、およびｔｃｏスタックを作る方法 Download PDF

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JP7470677B2
JP7470677B2 JP2021516602A JP2021516602A JP7470677B2 JP 7470677 B2 JP7470677 B2 JP 7470677B2 JP 2021516602 A JP2021516602 A JP 2021516602A JP 2021516602 A JP2021516602 A JP 2021516602A JP 7470677 B2 JP7470677 B2 JP 7470677B2
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layer
transparent conductive
metal oxide
conductive metal
sputtering
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JP2022502847A (ja
JP2022502847A5 (https=
Inventor
ブルジョワ，パウリナ
クラーク－フェルプス，ロバート
ファーン，チイ
グオ，ジーン
モア，ゴパル
シャオ，ルイ
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ファースト・ソーラー・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484—Refractive light-concentrating means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physical Vapour Deposition (AREA)
JP2021516602A 2018-09-24 2019-09-23 テクスチャ化ｔｃｏ層を有する光起電デバイス、およびｔｃｏスタックを作る方法 Active JP7470677B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862735328P 2018-09-24 2018-09-24
US62/735,328 2018-09-24
PCT/US2019/052370 WO2020068630A1 (en) 2018-09-24 2019-09-23 Photovoltaic devices with textured tco layers, and methods of making tco stacks

Publications (3)

Publication Number Publication Date
JP2022502847A JP2022502847A (ja) 2022-01-11
JP2022502847A5 JP2022502847A5 (https=) 2023-06-26
JP7470677B2 true JP7470677B2 (ja) 2024-04-18

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JP2021516602A Active JP7470677B2 (ja) 2018-09-24 2019-09-23 テクスチャ化ｔｃｏ層を有する光起電デバイス、およびｔｃｏスタックを作る方法

Country Status (5)

Country Link
US (2) US12336321B2 (https=)
EP (1) EP3853908A1 (https=)
JP (1) JP7470677B2 (https=)
MY (1) MY207744A (https=)
WO (1) WO2020068630A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11155493B2 (en) * 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US12249664B2 (en) 2020-09-21 2025-03-11 First Solar, Inc. Transparent conducting layers and photovoltaic devices including the same
JP2023548537A (ja) * 2020-11-03 2023-11-17 ファースト・ソーラー・インコーポレーテッド 導電層相互接続を備える光起電デバイス

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003101158A1 (fr) 2002-05-29 2003-12-04 Asahi Glass Company, Limited Substrat comprenant un film conducteur transparent et dispositif electroluminescent organique
JP2006249554A (ja) 2005-03-14 2006-09-21 Fuji Electric Holdings Co Ltd スパッタリングターゲット及びその調製方法ならびにスパッタ方法
US20080096376A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Transparent zinc oxide electrode having a graded oxygen content
US20090084438A1 (en) 2006-11-02 2009-04-02 Guardian Industries Corp., Front electrode for use in photovoltaic device and method of making same
JP2010080358A (ja) 2008-09-29 2010-04-08 Hitachi Ltd 透明導電膜付基板、及びそれを用いた表示素子及び太陽電池
JP2010514920A (ja) 2006-12-21 2010-05-06 アプライド マテリアルズ インコーポレイテッド 透明導電膜の反応性スパッタ堆積
US20110126875A1 (en) 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
JP2011183567A (ja) 2010-03-04 2011-09-22 Kaneka Corp 透明電極付き基板の製造方法
JP2012504306A (ja) 2008-09-30 2012-02-16 エルジー・ケム・リミテッド 透明導電膜及びそれを備えた透明電極
JP2012049218A (ja) 2010-08-25 2012-03-08 Sumitomo Metal Mining Co Ltd 透明導電膜の製造方法、及び薄膜太陽電池の製造方法
JP2012089629A (ja) 2010-10-18 2012-05-10 Mitsubishi Electric Corp 光電変換装置、及び光電変換装置の製造方法
US20120153341A1 (en) 2009-06-08 2012-06-21 University Of Toledo Flexible Photovoltaic Cells Having a Polyimide Material Layer and Method of Producing Same
JP2012188711A (ja) 2011-03-11 2012-10-04 Mitsubishi Materials Corp 太陽電池用透明導電膜およびその製造方法
US20120285522A1 (en) 2011-05-13 2012-11-15 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for tco layer, and solar cell precursor layer stack
JP2013058638A (ja) 2011-09-08 2013-03-28 Ulvac Japan Ltd 太陽電池用透明導電性基板の製造方法及び太陽電池用透明導電性基板
JP2014010211A (ja) 2012-06-28 2014-01-20 Seiko Epson Corp 液晶装置、液晶装置の製造方法、電子機器
JP2016127179A (ja) 2015-01-06 2016-07-11 三菱電機株式会社 薄膜太陽電池およびその製造方法
JP2016183402A (ja) 2015-03-26 2016-10-20 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743488B2 (en) * 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
US20070029186A1 (en) * 2005-08-02 2007-02-08 Alexey Krasnov Method of thermally tempering coated article with transparent conductive oxide (TCO) coating using inorganic protective layer during tempering and product made using same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080308411A1 (en) * 2007-05-25 2008-12-18 Energy Photovoltaics, Inc. Method and process for deposition of textured zinc oxide thin films
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1 (en) 2008-02-01 2009-08-06 Guardian Industries Corp. Front electrode having etched surface for use in photovoltaic device and method of making same
JP2008153714A (ja) * 2008-04-02 2008-07-03 Masayoshi Murata 薄膜太陽電池用基板及びその製造方法、並びにそれを用いた薄膜太陽電池
JP6261988B2 (ja) * 2013-01-16 2018-01-17 日東電工株式会社 透明導電フィルムおよびその製造方法

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003101158A1 (fr) 2002-05-29 2003-12-04 Asahi Glass Company, Limited Substrat comprenant un film conducteur transparent et dispositif electroluminescent organique
JP2006249554A (ja) 2005-03-14 2006-09-21 Fuji Electric Holdings Co Ltd スパッタリングターゲット及びその調製方法ならびにスパッタ方法
US20080096376A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Transparent zinc oxide electrode having a graded oxygen content
US20090084438A1 (en) 2006-11-02 2009-04-02 Guardian Industries Corp., Front electrode for use in photovoltaic device and method of making same
JP2010514920A (ja) 2006-12-21 2010-05-06 アプライド マテリアルズ インコーポレイテッド 透明導電膜の反応性スパッタ堆積
JP2010080358A (ja) 2008-09-29 2010-04-08 Hitachi Ltd 透明導電膜付基板、及びそれを用いた表示素子及び太陽電池
JP2012504306A (ja) 2008-09-30 2012-02-16 エルジー・ケム・リミテッド 透明導電膜及びそれを備えた透明電極
US20120153341A1 (en) 2009-06-08 2012-06-21 University Of Toledo Flexible Photovoltaic Cells Having a Polyimide Material Layer and Method of Producing Same
US20110126875A1 (en) 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
JP2011183567A (ja) 2010-03-04 2011-09-22 Kaneka Corp 透明電極付き基板の製造方法
JP2012049218A (ja) 2010-08-25 2012-03-08 Sumitomo Metal Mining Co Ltd 透明導電膜の製造方法、及び薄膜太陽電池の製造方法
JP2012089629A (ja) 2010-10-18 2012-05-10 Mitsubishi Electric Corp 光電変換装置、及び光電変換装置の製造方法
JP2012188711A (ja) 2011-03-11 2012-10-04 Mitsubishi Materials Corp 太陽電池用透明導電膜およびその製造方法
US20120285522A1 (en) 2011-05-13 2012-11-15 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for tco layer, and solar cell precursor layer stack
JP2013058638A (ja) 2011-09-08 2013-03-28 Ulvac Japan Ltd 太陽電池用透明導電性基板の製造方法及び太陽電池用透明導電性基板
JP2014010211A (ja) 2012-06-28 2014-01-20 Seiko Epson Corp 液晶装置、液晶装置の製造方法、電子機器
JP2016127179A (ja) 2015-01-06 2016-07-11 三菱電機株式会社 薄膜太陽電池およびその製造方法
JP2016183402A (ja) 2015-03-26 2016-10-20 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法

Also Published As

Publication number Publication date
MY207744A (en) 2025-03-15
EP3853908A1 (en) 2021-07-28
JP2022502847A (ja) 2022-01-11
US20250311473A1 (en) 2025-10-02
US12336321B2 (en) 2025-06-17
US20220013674A1 (en) 2022-01-13
WO2020068630A1 (en) 2020-04-02

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