JP7448314B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7448314B2
JP7448314B2 JP2019080072A JP2019080072A JP7448314B2 JP 7448314 B2 JP7448314 B2 JP 7448314B2 JP 2019080072 A JP2019080072 A JP 2019080072A JP 2019080072 A JP2019080072 A JP 2019080072A JP 7448314 B2 JP7448314 B2 JP 7448314B2
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compound
semiconductor
region
electrode
semiconductor device
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Japanese (ja)
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JP2020178068A (ja
JP2020178068A5 (enExample
Inventor
浩志 大野
章 向井
瑛祐 梶原
大望 加藤
彩 新留
雅彦 蔵口
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2019080072A priority Critical patent/JP7448314B2/ja
Priority to US16/787,351 priority patent/US11476336B2/en
Publication of JP2020178068A publication Critical patent/JP2020178068A/ja
Publication of JP2020178068A5 publication Critical patent/JP2020178068A5/ja
Priority to JP2023191224A priority patent/JP7635340B2/ja
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
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    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/476—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having gate trenches interrupting the 2D charge carrier gas channels, e.g. hybrid MOS-HEMTs
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
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    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2019080072A 2019-04-19 2019-04-19 半導体装置 Active JP7448314B2 (ja)

Priority Applications (3)

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JP2019080072A JP7448314B2 (ja) 2019-04-19 2019-04-19 半導体装置
US16/787,351 US11476336B2 (en) 2019-04-19 2020-02-11 Semiconductor device
JP2023191224A JP7635340B2 (ja) 2019-04-19 2023-11-09 半導体装置

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JP7332548B2 (ja) 2020-08-06 2023-08-23 株式会社東芝 半導体装置
JP2022184315A (ja) * 2021-06-01 2022-12-13 株式会社東芝 半導体装置
JP7524140B2 (ja) 2021-07-26 2024-07-29 株式会社東芝 半導体装置
JP7445093B2 (ja) * 2021-08-03 2024-03-06 ヌヴォトンテクノロジージャパン株式会社 可変容量素子
US12218232B2 (en) * 2021-08-25 2025-02-04 Kabushiki Kaisha Toshiba Semiconductor device including compound and nitride members
JP2024167557A (ja) * 2023-05-22 2024-12-04 株式会社東芝 半導体装置及びその製造方法

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JP2008227014A (ja) 2007-03-09 2008-09-25 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
WO2012172753A1 (ja) 2011-06-13 2012-12-20 パナソニック株式会社 半導体装置及びその製造方法
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JP2013179376A (ja) 2013-06-26 2013-09-09 Panasonic Corp 半導体装置
JP2015179785A (ja) 2014-03-19 2015-10-08 株式会社東芝 半導体装置
JP2017041543A (ja) 2015-08-20 2017-02-23 住友電気工業株式会社 高電子移動度トランジスタ

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US11476336B2 (en) 2022-10-18
JP2024012548A (ja) 2024-01-30
JP7635340B2 (ja) 2025-02-25
US20200335587A1 (en) 2020-10-22
JP2020178068A (ja) 2020-10-29

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