JP7445705B2 - 半導体光検出素子 - Google Patents
半導体光検出素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 169
- 239000002238 carbon nanotube film Substances 0.000 claims description 133
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 75
- 239000002041 carbon nanotube Substances 0.000 claims description 75
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 239000002048 multi walled nanotube Substances 0.000 claims description 25
- 239000002109 single walled nanotube Substances 0.000 claims description 23
- 238000002834 transmittance Methods 0.000 claims description 21
- 230000000630 rising effect Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 40
- 230000035945 sensitivity Effects 0.000 description 38
- 238000001514 detection method Methods 0.000 description 33
- 229910000510 noble metal Inorganic materials 0.000 description 33
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- 230000007423 decrease Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
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- 238000010521 absorption reaction Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D24/00—Special deep-drawing arrangements in, or in connection with, presses
- B21D24/02—Die-cushions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
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- C01B32/158—Carbon nanotubes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
図1は、本発明の第1実施形態による光検出装置1の構成を示す平面図である。図2は、図1に示された光検出装置1のII-II線に沿った断面図である。図1及び図2に示されるように、本実施形態の光検出装置1は、パッケージ2と、パッケージ2に収容された半導体光検出素子10Aとを備える。本実施形態の光検出装置1は、主に紫外光の強度を検出するための装置である。
図11は、本発明の第2実施形態による半導体光検出素子として、固体撮像素子10Bの構成を示す断面図である。固体撮像素子10Bは、主に紫外光像を撮像するための裏面入射型CCD(Charge Coupled Device)イメージセンサである。図11に示されるように、固体撮像素子10Bは、半導体部30を備える。半導体部30は、p+型半導体基板22と、p+型半導体基板22の一方の面上にエピタキシャル成長したp-型半導体層23とを有する。p+型半導体基板22及びp-型半導体層23は、例えば不純物が添加されたシリコン結晶からなる。
Claims (8)
- 入射光を受ける受光領域を含む表面を有し、前記受光領域に入射した前記入射光を光電変換する半導体部と、
前記表面上に設けられた金属部と、
前記受光領域上に設けられ、多数のカーボンナノチューブが堆積してなるカーボンナノチューブ膜と、を備え、
前記カーボンナノチューブ膜は、前記受光領域上に設けられた主部と、前記金属部の上面上に設けられた乗り上げ部と、前記主部と前記乗り上げ部とを繋ぐ立ち上がり部と、を有し、
前記カーボンナノチューブ膜の前記立ち上がり部は、前記金属部の内側面と接しており、
前記カーボンナノチューブ膜に含まれる前記多数のカーボンナノチューブの長さが、前記表面を基準とする前記金属部の前記上面の高さ以上である、半導体光検出素子。 - 前記多数のカーボンナノチューブは、バンドル状のカーボンナノチューブと、非バンドル状のカーボンナノチューブとによって構成される、請求項1に記載の半導体光検出素子。
- 前記カーボンナノチューブ膜のシート抵抗が104Ω/□以上である、請求項1または2に記載の半導体光検出素子。
- 前記カーボンナノチューブ膜に含まれる前記多数のカーボンナノチューブの長さが1μm以上である、請求項1~3のいずれか一項に記載の半導体光検出素子。
- 前記カーボンナノチューブ膜に含まれる単層カーボンナノチューブの割合が多層カーボンナノチューブの割合よりも大きい、請求項1~4のいずれか一項に記載の半導体光検出素子。
- 前記カーボンナノチューブ膜に含まれる多層カーボンナノチューブの割合が単層カーボンナノチューブの割合よりも大きい、請求項1~4のいずれか一項に記載の半導体光検出素子。
- 400nm以下の波長域における前記カーボンナノチューブ膜の透過率が85%以上である、請求項1~6のいずれか一項に記載の半導体光検出素子。
- 200nm以上の波長域における前記カーボンナノチューブ膜の透過率が85%以上である、請求項7に記載の半導体光検出素子。
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JP2022095569A JP7445705B2 (ja) | 2017-03-08 | 2022-06-14 | 半導体光検出素子 |
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JP2017044179A JP7090400B2 (ja) | 2017-03-08 | 2017-03-08 | 半導体光検出素子 |
JP2022095569A JP7445705B2 (ja) | 2017-03-08 | 2022-06-14 | 半導体光検出素子 |
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JP7445705B2 true JP7445705B2 (ja) | 2024-03-07 |
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US (2) | US11205676B2 (ja) |
JP (2) | JP7090400B2 (ja) |
CN (2) | CN117038690A (ja) |
DE (1) | DE112018001216T5 (ja) |
WO (1) | WO2018163965A1 (ja) |
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JP7025302B2 (ja) | 2018-08-07 | 2022-02-24 | 株式会社日立製作所 | 情報処理システム、及び情報処理方法 |
JPWO2021085047A1 (ja) * | 2019-10-31 | 2021-05-06 |
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US11205676B2 (en) | 2021-12-21 |
US20200035747A1 (en) | 2020-01-30 |
CN117038690A (zh) | 2023-11-10 |
JP7090400B2 (ja) | 2022-06-24 |
CN110383503B (zh) | 2023-09-05 |
DE112018001216T5 (de) | 2019-11-21 |
WO2018163965A1 (ja) | 2018-09-13 |
US20220028906A1 (en) | 2022-01-27 |
US11664405B2 (en) | 2023-05-30 |
JP2018148138A (ja) | 2018-09-20 |
JP2022113791A (ja) | 2022-08-04 |
CN110383503A (zh) | 2019-10-25 |
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