JP7427763B2 - 光学的表面欠陥物質特性評価のための方法およびシステム - Google Patents
光学的表面欠陥物質特性評価のための方法およびシステム Download PDFInfo
- Publication number
- JP7427763B2 JP7427763B2 JP2022500771A JP2022500771A JP7427763B2 JP 7427763 B2 JP7427763 B2 JP 7427763B2 JP 2022500771 A JP2022500771 A JP 2022500771A JP 2022500771 A JP2022500771 A JP 2022500771A JP 7427763 B2 JP7427763 B2 JP 7427763B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- pupil
- configuration
- spatially distinct
- distinct regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
- G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/064—Stray light conditioning
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Quality & Reliability (AREA)
- Theoretical Computer Science (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962871872P | 2019-07-09 | 2019-07-09 | |
| US62/871,872 | 2019-07-09 | ||
| US16/913,396 | 2020-06-26 | ||
| US16/913,396 US11703460B2 (en) | 2019-07-09 | 2020-06-26 | Methods and systems for optical surface defect material characterization |
| PCT/US2020/041088 WO2021007262A1 (en) | 2019-07-09 | 2020-07-08 | Methods and systems for optical surface defect material characterization |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022540130A JP2022540130A (ja) | 2022-09-14 |
| JP2022540130A5 JP2022540130A5 (https=) | 2023-07-05 |
| JP7427763B2 true JP7427763B2 (ja) | 2024-02-05 |
Family
ID=74103053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022500771A Active JP7427763B2 (ja) | 2019-07-09 | 2020-07-08 | 光学的表面欠陥物質特性評価のための方法およびシステム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11703460B2 (https=) |
| JP (1) | JP7427763B2 (https=) |
| KR (1) | KR102630492B1 (https=) |
| CN (1) | CN114096834B (https=) |
| IL (1) | IL289546B2 (https=) |
| TW (1) | TWI840582B (https=) |
| WO (1) | WO2021007262A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115461683A (zh) * | 2020-04-24 | 2022-12-09 | Asml控股股份有限公司 | 污染物标识量测系统、光刻设备及其方法 |
| US12072626B2 (en) | 2021-02-19 | 2024-08-27 | Inpria Corporation | Organometallic radiation patternable coatings with low defectivity and corresponding methods |
| US11709352B2 (en) * | 2021-03-25 | 2023-07-25 | Trustees Of Boston University | Dark-field mid-infrared photothermal microscopy |
| CN113358324B (zh) * | 2021-06-11 | 2022-09-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | 一种基于空间相移的散斑干涉烧蚀测量系统及方法 |
| US12449352B2 (en) * | 2023-06-15 | 2025-10-21 | Kla Corporation | Optics for measurement of thick films and high aspect ratio structures |
| CN116973337B (zh) * | 2023-09-25 | 2023-12-22 | 成都曙创大能科技有限公司 | 一种微细金刚线表面粒子数量密度测量系统 |
| CN119725126A (zh) * | 2023-09-28 | 2025-03-28 | 上海微电子装备(集团)股份有限公司 | 光学检测方法 |
| CN117368221A (zh) * | 2023-10-31 | 2024-01-09 | 西安奕斯伟材料科技股份有限公司 | 检测晶圆表面缺陷的方法、装置及介质 |
| CN117232790B (zh) * | 2023-11-07 | 2024-02-02 | 中国科学院长春光学精密机械与物理研究所 | 基于二维散射实现光学元件表面缺陷的评估方法及系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6462807B1 (en) | 1993-05-28 | 2002-10-08 | Nikon Corporation | Projection exposure apparatus and method |
| US20180088469A1 (en) | 2016-09-26 | 2018-03-29 | Hitachi High-Technologies Corporation | Defect detection device and defect observation device |
| JP2018515782A (ja) | 2015-05-19 | 2018-06-14 | ケーエルエー−テンカー コーポレイション | オーバレイ計測用トポグラフィック位相制御 |
| US20180188188A1 (en) | 2017-01-05 | 2018-07-05 | Kla-Tencor Corporation | Systems and Methods for Defect Material Classification |
| JP2019502928A (ja) | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
Family Cites Families (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
| JP3398472B2 (ja) * | 1994-06-14 | 2003-04-21 | 株式会社日立製作所 | 検査方法および検査装置 |
| US5864394A (en) | 1994-06-20 | 1999-01-26 | Kla-Tencor Corporation | Surface inspection system |
| US6608676B1 (en) | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
| US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| JP4089798B2 (ja) | 1998-04-13 | 2008-05-28 | 株式会社トプコン | 表面検査装置 |
| US6169601B1 (en) | 1998-06-23 | 2001-01-02 | Ade Optical Systems | Method and apparatus for distinguishing particles from subsurface defects on a substrate using polarized light |
| US6208411B1 (en) | 1998-09-28 | 2001-03-27 | Kla-Tencor Corporation | Massively parallel inspection and imaging system |
| TW444247B (en) | 1999-01-29 | 2001-07-01 | Toshiba Corp | Laser beam irradiating device, manufacture of non-single crystal semiconductor film, and manufacture of liquid crystal display device |
| US6529270B1 (en) | 1999-03-31 | 2003-03-04 | Ade Optical Systems Corporation | Apparatus and method for detecting defects in the surface of a workpiece |
| US6486946B1 (en) | 1999-06-15 | 2002-11-26 | Ade Corporation | Method for discriminating between holes in and particles on a film covering a substrate |
| US6466315B1 (en) | 1999-09-03 | 2002-10-15 | Applied Materials, Inc. | Method and system for reticle inspection by photolithography simulation |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6515742B1 (en) | 2000-11-28 | 2003-02-04 | Memc Electronic Materials, Inc. | Defect classification using scattered light intensities |
| US7046353B2 (en) | 2001-12-04 | 2006-05-16 | Kabushiki Kaisha Topcon | Surface inspection system |
| JP3833556B2 (ja) * | 2002-03-14 | 2006-10-11 | 三菱電機株式会社 | 光振幅位相時間応答測定装置 |
| US7130039B2 (en) | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
| US7286697B2 (en) | 2002-10-18 | 2007-10-23 | Applied Materials, Israel, Ltd. | System for imaging an extended area |
| JP4641143B2 (ja) | 2003-06-30 | 2011-03-02 | 株式会社トプコン | 表面検査装置 |
| JP4567984B2 (ja) | 2004-01-30 | 2010-10-27 | 株式会社 日立ディスプレイズ | 平面表示装置の製造装置 |
| US7295303B1 (en) | 2004-03-25 | 2007-11-13 | Kla-Tencor Technologies Corporation | Methods and apparatus for inspecting a sample |
| JP5033314B2 (ja) | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
| JP4694179B2 (ja) | 2004-11-18 | 2011-06-08 | 株式会社トプコン | 表面検査装置 |
| JP2006162500A (ja) | 2004-12-09 | 2006-06-22 | Hitachi High-Technologies Corp | 欠陥検査装置 |
| JP2008529199A (ja) | 2005-02-03 | 2008-07-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マルチビーム光走査装置のためのスポットサイズ焦点誤差検出 |
| US7548308B2 (en) | 2005-05-11 | 2009-06-16 | Kla-Tencor Corporation | Illumination energy management in surface inspection |
| US7436508B2 (en) | 2005-07-14 | 2008-10-14 | Kla-Tencor Technologies Corp. | Systems, circuits and methods for reducing thermal damage and extending the detection range of an inspection system |
| WO2008011903A1 (en) | 2006-07-28 | 2008-01-31 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Apparatus and method for processing a wafer |
| JP5182090B2 (ja) * | 2006-08-02 | 2013-04-10 | 株式会社ニコン | 欠陥検出装置及び欠陥検出方法 |
| US7643157B2 (en) * | 2007-01-04 | 2010-01-05 | Lasertec Corporation | Phase shift amount measurement apparatus and transmittance measurement apparatus |
| US7787114B2 (en) | 2007-06-06 | 2010-08-31 | Kla-Tencor Technologies Corp. | Systems and methods for inspecting a specimen with light at varying power levels |
| US8194240B1 (en) | 2008-03-04 | 2012-06-05 | Kla-Tencor Corporation | Enhanced focusing capability on a sample using a spot matrix |
| US8194301B2 (en) | 2008-03-04 | 2012-06-05 | Kla-Tencor Corporation | Multi-spot scanning system and method |
| US7912658B2 (en) | 2008-05-28 | 2011-03-22 | Kla-Tencor Corp. | Systems and methods for determining two or more characteristics of a wafer |
| WO2009149103A1 (en) * | 2008-06-03 | 2009-12-10 | Jeong Hwan J | Interferometric defect detection and classification |
| US7986412B2 (en) * | 2008-06-03 | 2011-07-26 | Jzw Llc | Interferometric defect detection and classification |
| JP4618360B2 (ja) | 2008-10-10 | 2011-01-26 | ソニー株式会社 | レーザアニール方法およびレーザアニール装置 |
| DE102009000528B4 (de) | 2009-01-30 | 2011-04-07 | Nanophotonics Ag | Inspektionsvorrichtung und -verfahren für die optische Untersuchung von Objektoberflächen, insbesondere von Waferoberflächen |
| JP5283037B2 (ja) | 2009-04-25 | 2013-09-04 | 独立行政法人産業技術総合研究所 | 高均一照度が得られる照明装置及び照明方法 |
| JP5544176B2 (ja) | 2010-01-07 | 2014-07-09 | 株式会社日立ハイテクノロジーズ | 検査装置および検査方法 |
| US8885158B2 (en) | 2011-03-10 | 2014-11-11 | Kla-Tencor Corporation | Surface scanning inspection system with adjustable scan pitch |
| NL2009001A (en) * | 2011-07-08 | 2013-01-09 | Asml Netherlands Bv | Methods and patterning devices for measuring phase aberration. |
| US9279774B2 (en) | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
| US8755044B2 (en) | 2011-08-15 | 2014-06-17 | Kla-Tencor Corporation | Large particle detection for multi-spot surface scanning inspection systems |
| KR101272603B1 (ko) | 2011-10-31 | 2013-06-07 | 부산대학교 산학협력단 | 다접점 온도 조절 시스템 |
| US9255891B2 (en) | 2012-11-20 | 2016-02-09 | Kla-Tencor Corporation | Inspection beam shaping for improved detection sensitivity |
| US9390887B2 (en) | 2013-09-17 | 2016-07-12 | Kla-Tencor Corporation | Non-invasive charged particle beam monitor |
| JP5725681B1 (ja) * | 2014-01-22 | 2015-05-27 | レーザーテック株式会社 | 干渉計及び位相シフト量測定装置 |
| US9506873B2 (en) * | 2014-04-15 | 2016-11-29 | Kla-Tencor Corp. | Pattern suppression in logic for wafer inspection |
| WO2016005167A1 (en) | 2014-07-09 | 2016-01-14 | Asml Netherlands B.V. | Inspection apparatus, inspection method and device manufacturing method |
| KR20160047360A (ko) * | 2014-10-22 | 2016-05-02 | 동우 화인켐 주식회사 | 결함 검출 시스템 및 방법 |
| US9739719B2 (en) | 2014-10-31 | 2017-08-22 | Kla-Tencor Corporation | Measurement systems having linked field and pupil signal detection |
| CN107850555B (zh) * | 2015-06-30 | 2023-06-13 | 康宁股份有限公司 | 使用静态条纹图案的干涉法滚降测量 |
| US9915625B2 (en) * | 2016-01-04 | 2018-03-13 | Kla-Tencor Corp. | Optical die to database inspection |
| US9874526B2 (en) | 2016-03-28 | 2018-01-23 | Kla-Tencor Corporation | Methods and apparatus for polarized wafer inspection |
| US10317198B2 (en) | 2016-09-30 | 2019-06-11 | Kla-Tencor Corporation | Three-dimensional mapping of a wafer |
| US10481111B2 (en) * | 2016-10-21 | 2019-11-19 | Kla-Tencor Corporation | Calibration of a small angle X-ray scatterometry based metrology system |
| US11333621B2 (en) * | 2017-07-11 | 2022-05-17 | Kla-Tencor Corporation | Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction |
| US10215714B1 (en) | 2017-08-16 | 2019-02-26 | Siemens Energy, Inc. | Method and system for detecting defects on surface of object |
-
2020
- 2020-06-26 US US16/913,396 patent/US11703460B2/en active Active
- 2020-07-08 KR KR1020227004285A patent/KR102630492B1/ko active Active
- 2020-07-08 JP JP2022500771A patent/JP7427763B2/ja active Active
- 2020-07-08 IL IL289546A patent/IL289546B2/en unknown
- 2020-07-08 WO PCT/US2020/041088 patent/WO2021007262A1/en not_active Ceased
- 2020-07-08 TW TW109122963A patent/TWI840582B/zh active
- 2020-07-08 CN CN202080048970.2A patent/CN114096834B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6462807B1 (en) | 1993-05-28 | 2002-10-08 | Nikon Corporation | Projection exposure apparatus and method |
| JP2018515782A (ja) | 2015-05-19 | 2018-06-14 | ケーエルエー−テンカー コーポレイション | オーバレイ計測用トポグラフィック位相制御 |
| JP2019502928A (ja) | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
| US20180088469A1 (en) | 2016-09-26 | 2018-03-29 | Hitachi High-Technologies Corporation | Defect detection device and defect observation device |
| US20180188188A1 (en) | 2017-01-05 | 2018-07-05 | Kla-Tencor Corporation | Systems and Methods for Defect Material Classification |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114096834A (zh) | 2022-02-25 |
| IL289546B1 (en) | 2025-06-01 |
| US20210010949A1 (en) | 2021-01-14 |
| IL289546B2 (en) | 2025-10-01 |
| CN114096834B (zh) | 2026-02-27 |
| TW202109017A (zh) | 2021-03-01 |
| TWI840582B (zh) | 2024-05-01 |
| JP2022540130A (ja) | 2022-09-14 |
| IL289546A (en) | 2022-03-01 |
| KR20220031687A (ko) | 2022-03-11 |
| WO2021007262A1 (en) | 2021-01-14 |
| KR102630492B1 (ko) | 2024-01-30 |
| US11703460B2 (en) | 2023-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7427763B2 (ja) | 光学的表面欠陥物質特性評価のための方法およびシステム | |
| KR102514134B1 (ko) | 웨이퍼 노이즈 뉴슨스 식별을 위한 sem 및 광학 이미지의 상관 | |
| KR102438824B1 (ko) | 3차원 반도체 구조체들의 검사를 위한 결함 발견 및 레시피 최적화 | |
| US8045145B1 (en) | Systems and methods for acquiring information about a defect on a specimen | |
| KR102525814B1 (ko) | 반도체 웨이퍼 검사용 3차원 이미징 | |
| US7747062B2 (en) | Methods, defect review tools, and systems for locating a defect in a defect review process | |
| TWI721993B (zh) | 用於量測在一半導體晶圓上之高度的方法及裝置 | |
| US20150226539A1 (en) | System and method for determining the position of defects on objects, coordinate measuring unit and computer program for coordinate measuring unit | |
| US10126251B2 (en) | Inspection systems and techniques with enhanced detection | |
| US9255891B2 (en) | Inspection beam shaping for improved detection sensitivity | |
| TW201801217A (zh) | 用於極化晶圓檢查之方法及裝置 | |
| US8605276B2 (en) | Enhanced defect scanning | |
| US20250044679A1 (en) | Pupil filter with spatially-varying transmission |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230627 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230627 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20230627 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230711 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230922 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231003 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231219 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240109 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240124 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7427763 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |