CN114096834B - 用于光学表面缺陷材料特性化的方法及系统 - Google Patents

用于光学表面缺陷材料特性化的方法及系统

Info

Publication number
CN114096834B
CN114096834B CN202080048970.2A CN202080048970A CN114096834B CN 114096834 B CN114096834 B CN 114096834B CN 202080048970 A CN202080048970 A CN 202080048970A CN 114096834 B CN114096834 B CN 114096834B
Authority
CN
China
Prior art keywords
light
amount
pupil
distinct regions
spatially distinct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080048970.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN114096834A (zh
Inventor
许志伟
K·哈勒尔
J-K·龙
C·渥特斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN114096834A publication Critical patent/CN114096834A/zh
Application granted granted Critical
Publication of CN114096834B publication Critical patent/CN114096834B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/064—Stray light conditioning

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN202080048970.2A 2019-07-09 2020-07-08 用于光学表面缺陷材料特性化的方法及系统 Active CN114096834B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962871872P 2019-07-09 2019-07-09
US62/871,872 2019-07-09
US16/913,396 2020-06-26
US16/913,396 US11703460B2 (en) 2019-07-09 2020-06-26 Methods and systems for optical surface defect material characterization
PCT/US2020/041088 WO2021007262A1 (en) 2019-07-09 2020-07-08 Methods and systems for optical surface defect material characterization

Publications (2)

Publication Number Publication Date
CN114096834A CN114096834A (zh) 2022-02-25
CN114096834B true CN114096834B (zh) 2026-02-27

Family

ID=74103053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080048970.2A Active CN114096834B (zh) 2019-07-09 2020-07-08 用于光学表面缺陷材料特性化的方法及系统

Country Status (7)

Country Link
US (1) US11703460B2 (https=)
JP (1) JP7427763B2 (https=)
KR (1) KR102630492B1 (https=)
CN (1) CN114096834B (https=)
IL (1) IL289546B2 (https=)
TW (1) TWI840582B (https=)
WO (1) WO2021007262A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461683A (zh) * 2020-04-24 2022-12-09 Asml控股股份有限公司 污染物标识量测系统、光刻设备及其方法
US12072626B2 (en) 2021-02-19 2024-08-27 Inpria Corporation Organometallic radiation patternable coatings with low defectivity and corresponding methods
US11709352B2 (en) * 2021-03-25 2023-07-25 Trustees Of Boston University Dark-field mid-infrared photothermal microscopy
CN113358324B (zh) * 2021-06-11 2022-09-02 中国空气动力研究与发展中心超高速空气动力研究所 一种基于空间相移的散斑干涉烧蚀测量系统及方法
US12449352B2 (en) * 2023-06-15 2025-10-21 Kla Corporation Optics for measurement of thick films and high aspect ratio structures
CN116973337B (zh) * 2023-09-25 2023-12-22 成都曙创大能科技有限公司 一种微细金刚线表面粒子数量密度测量系统
CN119725126A (zh) * 2023-09-28 2025-03-28 上海微电子装备（集团）股份有限公司 光学检测方法
CN117368221A (zh) * 2023-10-31 2024-01-09 西安奕斯伟材料科技股份有限公司 检测晶圆表面缺陷的方法、装置及介质
CN117232790B (zh) * 2023-11-07 2024-02-02 中国科学院长春光学精密机械与物理研究所 基于二维散射实现光学元件表面缺陷的评估方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109863583A (zh) * 2016-10-21 2019-06-07 科磊股份有限公司 基于小角度x射线散射测量的计量系统的校准

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854671A (en) 1993-05-28 1998-12-29 Nikon Corporation Scanning exposure method and apparatus therefor and a projection exposure apparatus and method which selectively chooses between static exposure and scanning exposure
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
JP3398472B2 (ja) * 1994-06-14 2003-04-21 株式会社日立製作所 検査方法および検査装置
US5864394A (en) 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
US6608676B1 (en) 1997-08-01 2003-08-19 Kla-Tencor Corporation System for detecting anomalies and/or features of a surface
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
JP4089798B2 (ja) 1998-04-13 2008-05-28 株式会社トプコン 表面検査装置
US6169601B1 (en) 1998-06-23 2001-01-02 Ade Optical Systems Method and apparatus for distinguishing particles from subsurface defects on a substrate using polarized light
US6208411B1 (en) 1998-09-28 2001-03-27 Kla-Tencor Corporation Massively parallel inspection and imaging system
TW444247B (en) 1999-01-29 2001-07-01 Toshiba Corp Laser beam irradiating device, manufacture of non-single crystal semiconductor film, and manufacture of liquid crystal display device
US6529270B1 (en) 1999-03-31 2003-03-04 Ade Optical Systems Corporation Apparatus and method for detecting defects in the surface of a workpiece
US6486946B1 (en) 1999-06-15 2002-11-26 Ade Corporation Method for discriminating between holes in and particles on a film covering a substrate
US6466315B1 (en) 1999-09-03 2002-10-15 Applied Materials, Inc. Method and system for reticle inspection by photolithography simulation
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6515742B1 (en) 2000-11-28 2003-02-04 Memc Electronic Materials, Inc. Defect classification using scattered light intensities
US7046353B2 (en) 2001-12-04 2006-05-16 Kabushiki Kaisha Topcon Surface inspection system
JP3833556B2 (ja) * 2002-03-14 2006-10-11 三菱電機株式会社 光振幅位相時間応答測定装置
US7130039B2 (en) 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
US7286697B2 (en) 2002-10-18 2007-10-23 Applied Materials, Israel, Ltd. System for imaging an extended area
JP4641143B2 (ja) 2003-06-30 2011-03-02 株式会社トプコン 表面検査装置
JP4567984B2 (ja) 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置
US7295303B1 (en) 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
JP5033314B2 (ja) 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
JP4694179B2 (ja) 2004-11-18 2011-06-08 株式会社トプコン 表面検査装置
JP2006162500A (ja) 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 欠陥検査装置
JP2008529199A (ja) 2005-02-03 2008-07-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ マルチビーム光走査装置のためのスポットサイズ焦点誤差検出
US7548308B2 (en) 2005-05-11 2009-06-16 Kla-Tencor Corporation Illumination energy management in surface inspection
US7436508B2 (en) 2005-07-14 2008-10-14 Kla-Tencor Technologies Corp. Systems, circuits and methods for reducing thermal damage and extending the detection range of an inspection system
WO2008011903A1 (en) 2006-07-28 2008-01-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Apparatus and method for processing a wafer
JP5182090B2 (ja) * 2006-08-02 2013-04-10 株式会社ニコン 欠陥検出装置及び欠陥検出方法
US7643157B2 (en) * 2007-01-04 2010-01-05 Lasertec Corporation Phase shift amount measurement apparatus and transmittance measurement apparatus
US7787114B2 (en) 2007-06-06 2010-08-31 Kla-Tencor Technologies Corp. Systems and methods for inspecting a specimen with light at varying power levels
US8194240B1 (en) 2008-03-04 2012-06-05 Kla-Tencor Corporation Enhanced focusing capability on a sample using a spot matrix
US8194301B2 (en) 2008-03-04 2012-06-05 Kla-Tencor Corporation Multi-spot scanning system and method
US7912658B2 (en) 2008-05-28 2011-03-22 Kla-Tencor Corp. Systems and methods for determining two or more characteristics of a wafer
WO2009149103A1 (en) * 2008-06-03 2009-12-10 Jeong Hwan J Interferometric defect detection and classification
US7986412B2 (en) * 2008-06-03 2011-07-26 Jzw Llc Interferometric defect detection and classification
JP4618360B2 (ja) 2008-10-10 2011-01-26 ソニー株式会社 レーザアニール方法およびレーザアニール装置
DE102009000528B4 (de) 2009-01-30 2011-04-07 Nanophotonics Ag Inspektionsvorrichtung und -verfahren für die optische Untersuchung von Objektoberflächen, insbesondere von Waferoberflächen
JP5283037B2 (ja) 2009-04-25 2013-09-04 独立行政法人産業技術総合研究所 高均一照度が得られる照明装置及び照明方法
JP5544176B2 (ja) 2010-01-07 2014-07-09 株式会社日立ハイテクノロジーズ 検査装置および検査方法
US8885158B2 (en) 2011-03-10 2014-11-11 Kla-Tencor Corporation Surface scanning inspection system with adjustable scan pitch
NL2009001A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and patterning devices for measuring phase aberration.
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US8755044B2 (en) 2011-08-15 2014-06-17 Kla-Tencor Corporation Large particle detection for multi-spot surface scanning inspection systems
KR101272603B1 (ko) 2011-10-31 2013-06-07 부산대학교 산학협력단 다접점 온도 조절 시스템
US9255891B2 (en) 2012-11-20 2016-02-09 Kla-Tencor Corporation Inspection beam shaping for improved detection sensitivity
US9390887B2 (en) 2013-09-17 2016-07-12 Kla-Tencor Corporation Non-invasive charged particle beam monitor
JP5725681B1 (ja) * 2014-01-22 2015-05-27 レーザーテック株式会社 干渉計及び位相シフト量測定装置
US9506873B2 (en) * 2014-04-15 2016-11-29 Kla-Tencor Corp. Pattern suppression in logic for wafer inspection
WO2016005167A1 (en) 2014-07-09 2016-01-14 Asml Netherlands B.V. Inspection apparatus, inspection method and device manufacturing method
KR20160047360A (ko) * 2014-10-22 2016-05-02 동우 화인켐 주식회사 결함 검출 시스템 및 방법
US9739719B2 (en) 2014-10-31 2017-08-22 Kla-Tencor Corporation Measurement systems having linked field and pupil signal detection
CN112859540B (zh) 2015-05-19 2024-10-18 科磊股份有限公司 成像计量目标及方法
CN107850555B (zh) * 2015-06-30 2023-06-13 康宁股份有限公司 使用静态条纹图案的干涉法滚降测量
US9915625B2 (en) * 2016-01-04 2018-03-13 Kla-Tencor Corp. Optical die to database inspection
US9574992B1 (en) 2016-01-22 2017-02-21 Kla-Tencor Corporation Single wavelength ellipsometry with improved spot size capability
US9874526B2 (en) 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
JP6738254B2 (ja) 2016-09-26 2020-08-12 株式会社日立ハイテク 欠陥検出装置及び欠陥観察装置
US10317198B2 (en) 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
US10234402B2 (en) 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US11333621B2 (en) * 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10215714B1 (en) 2017-08-16 2019-02-26 Siemens Energy, Inc. Method and system for detecting defects on surface of object

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109863583A (zh) * 2016-10-21 2019-06-07 科磊股份有限公司 基于小角度x射线散射测量的计量系统的校准

Also Published As

Publication number Publication date
CN114096834A (zh) 2022-02-25
IL289546B1 (en) 2025-06-01
US20210010949A1 (en) 2021-01-14
IL289546B2 (en) 2025-10-01
TW202109017A (zh) 2021-03-01
JP7427763B2 (ja) 2024-02-05
TWI840582B (zh) 2024-05-01
JP2022540130A (ja) 2022-09-14
IL289546A (en) 2022-03-01
KR20220031687A (ko) 2022-03-11
WO2021007262A1 (en) 2021-01-14
KR102630492B1 (ko) 2024-01-30
US11703460B2 (en) 2023-07-18

Similar Documents

Publication Publication Date Title
CN114096834B (zh) 用于光学表面缺陷材料特性化的方法及系统
KR102539921B1 (ko) 자동으로 생성된 결함 피처를 가진 반도체 구조의 검사를 위한 방법 및 시스템
KR102438824B1 (ko) 3차원 반도체 구조체들의 검사를 위한 결함 발견 및 레시피 최적화
KR102514134B1 (ko) 웨이퍼 노이즈 뉴슨스 식별을 위한 sem 및 광학 이미지의 상관
US10887580B2 (en) Three-dimensional imaging for semiconductor wafer inspection
US8045145B1 (en) Systems and methods for acquiring information about a defect on a specimen
KR102235580B1 (ko) 반도체 웨이퍼 검사를 위한 결함 마킹
US7747062B2 (en) Methods, defect review tools, and systems for locating a defect in a defect review process
CN102804063B (zh) 用于检测极紫外掩模基板上的缺陷的检验系统与方法
US6597006B1 (en) Dual beam symmetric height systems and methods
US9255891B2 (en) Inspection beam shaping for improved detection sensitivity
US20150226539A1 (en) System and method for determining the position of defects on objects, coordinate measuring unit and computer program for coordinate measuring unit
US20250044679A1 (en) Pupil filter with spatially-varying transmission
JP2024525262A (ja) 結像条件を推定し改善するための画像コントラストメトリック

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment