KR102630492B1 - 광학 표면 결함 재료 특성화를 위한 방법 및 시스템 - Google Patents
광학 표면 결함 재료 특성화를 위한 방법 및 시스템 Download PDFInfo
- Publication number
- KR102630492B1 KR102630492B1 KR1020227004285A KR20227004285A KR102630492B1 KR 102630492 B1 KR102630492 B1 KR 102630492B1 KR 1020227004285 A KR1020227004285 A KR 1020227004285A KR 20227004285 A KR20227004285 A KR 20227004285A KR 102630492 B1 KR102630492 B1 KR 102630492B1
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- South Korea
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- light
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
- G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- H01L22/12—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/064—Stray light conditioning
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Quality & Reliability (AREA)
- Theoretical Computer Science (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962871872P | 2019-07-09 | 2019-07-09 | |
| US62/871,872 | 2019-07-09 | ||
| US16/913,396 | 2020-06-26 | ||
| US16/913,396 US11703460B2 (en) | 2019-07-09 | 2020-06-26 | Methods and systems for optical surface defect material characterization |
| PCT/US2020/041088 WO2021007262A1 (en) | 2019-07-09 | 2020-07-08 | Methods and systems for optical surface defect material characterization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220031687A KR20220031687A (ko) | 2022-03-11 |
| KR102630492B1 true KR102630492B1 (ko) | 2024-01-30 |
Family
ID=74103053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227004285A Active KR102630492B1 (ko) | 2019-07-09 | 2020-07-08 | 광학 표면 결함 재료 특성화를 위한 방법 및 시스템 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11703460B2 (https=) |
| JP (1) | JP7427763B2 (https=) |
| KR (1) | KR102630492B1 (https=) |
| CN (1) | CN114096834B (https=) |
| IL (1) | IL289546B2 (https=) |
| TW (1) | TWI840582B (https=) |
| WO (1) | WO2021007262A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115461683A (zh) * | 2020-04-24 | 2022-12-09 | Asml控股股份有限公司 | 污染物标识量测系统、光刻设备及其方法 |
| US12072626B2 (en) | 2021-02-19 | 2024-08-27 | Inpria Corporation | Organometallic radiation patternable coatings with low defectivity and corresponding methods |
| US11709352B2 (en) * | 2021-03-25 | 2023-07-25 | Trustees Of Boston University | Dark-field mid-infrared photothermal microscopy |
| CN113358324B (zh) * | 2021-06-11 | 2022-09-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | 一种基于空间相移的散斑干涉烧蚀测量系统及方法 |
| US12449352B2 (en) * | 2023-06-15 | 2025-10-21 | Kla Corporation | Optics for measurement of thick films and high aspect ratio structures |
| CN116973337B (zh) * | 2023-09-25 | 2023-12-22 | 成都曙创大能科技有限公司 | 一种微细金刚线表面粒子数量密度测量系统 |
| CN119725126A (zh) * | 2023-09-28 | 2025-03-28 | 上海微电子装备(集团)股份有限公司 | 光学检测方法 |
| CN117368221A (zh) * | 2023-10-31 | 2024-01-09 | 西安奕斯伟材料科技股份有限公司 | 检测晶圆表面缺陷的方法、装置及介质 |
| CN117232790B (zh) * | 2023-11-07 | 2024-02-02 | 中国科学院长春光学精密机械与物理研究所 | 基于二维散射实现光学元件表面缺陷的评估方法及系统 |
Citations (7)
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| US20080174786A1 (en) | 2007-01-04 | 2008-07-24 | Hideo Takizawa | Phase shift amount measurement apparatus and transmittance measurement apparatus |
| US20130010306A1 (en) | 2011-07-08 | 2013-01-10 | Asml Netherlands B.V. | Methods and Patterning Devices For Measuring Phase Aberration |
| US20150204729A1 (en) | 2014-01-22 | 2015-07-23 | Lasertec Corporation | Interferometer and phase shift amount measuring apparatus |
| US20180088469A1 (en) | 2016-09-26 | 2018-03-29 | Hitachi High-Technologies Corporation | Defect detection device and defect observation device |
| JP2018515782A (ja) | 2015-05-19 | 2018-06-14 | ケーエルエー−テンカー コーポレイション | オーバレイ計測用トポグラフィック位相制御 |
| US20180188188A1 (en) | 2017-01-05 | 2018-07-05 | Kla-Tencor Corporation | Systems and Methods for Defect Material Classification |
| JP2019502928A (ja) | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
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| JP3398472B2 (ja) * | 1994-06-14 | 2003-04-21 | 株式会社日立製作所 | 検査方法および検査装置 |
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-
2020
- 2020-06-26 US US16/913,396 patent/US11703460B2/en active Active
- 2020-07-08 KR KR1020227004285A patent/KR102630492B1/ko active Active
- 2020-07-08 JP JP2022500771A patent/JP7427763B2/ja active Active
- 2020-07-08 IL IL289546A patent/IL289546B2/en unknown
- 2020-07-08 WO PCT/US2020/041088 patent/WO2021007262A1/en not_active Ceased
- 2020-07-08 TW TW109122963A patent/TWI840582B/zh active
- 2020-07-08 CN CN202080048970.2A patent/CN114096834B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080174786A1 (en) | 2007-01-04 | 2008-07-24 | Hideo Takizawa | Phase shift amount measurement apparatus and transmittance measurement apparatus |
| US20130010306A1 (en) | 2011-07-08 | 2013-01-10 | Asml Netherlands B.V. | Methods and Patterning Devices For Measuring Phase Aberration |
| US20150204729A1 (en) | 2014-01-22 | 2015-07-23 | Lasertec Corporation | Interferometer and phase shift amount measuring apparatus |
| JP2018515782A (ja) | 2015-05-19 | 2018-06-14 | ケーエルエー−テンカー コーポレイション | オーバレイ計測用トポグラフィック位相制御 |
| JP2019502928A (ja) | 2016-01-22 | 2019-01-31 | ケーエルエー−テンカー コーポレイション | 改善されたスポットサイズ能力を有する単波長エリプソメトリー |
| US20180088469A1 (en) | 2016-09-26 | 2018-03-29 | Hitachi High-Technologies Corporation | Defect detection device and defect observation device |
| US20180188188A1 (en) | 2017-01-05 | 2018-07-05 | Kla-Tencor Corporation | Systems and Methods for Defect Material Classification |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114096834A (zh) | 2022-02-25 |
| IL289546B1 (en) | 2025-06-01 |
| US20210010949A1 (en) | 2021-01-14 |
| IL289546B2 (en) | 2025-10-01 |
| CN114096834B (zh) | 2026-02-27 |
| TW202109017A (zh) | 2021-03-01 |
| JP7427763B2 (ja) | 2024-02-05 |
| TWI840582B (zh) | 2024-05-01 |
| JP2022540130A (ja) | 2022-09-14 |
| IL289546A (en) | 2022-03-01 |
| KR20220031687A (ko) | 2022-03-11 |
| WO2021007262A1 (en) | 2021-01-14 |
| US11703460B2 (en) | 2023-07-18 |
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