JP7427541B2 - 量子ドットの製造方法 - Google Patents
量子ドットの製造方法 Download PDFInfo
- Publication number
- JP7427541B2 JP7427541B2 JP2020102926A JP2020102926A JP7427541B2 JP 7427541 B2 JP7427541 B2 JP 7427541B2 JP 2020102926 A JP2020102926 A JP 2020102926A JP 2020102926 A JP2020102926 A JP 2020102926A JP 7427541 B2 JP7427541 B2 JP 7427541B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum dots
- solution
- precursor solution
- precursor
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002096 quantum dot Substances 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000002243 precursor Substances 0.000 claims description 72
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 32
- 239000000443 aerosol Substances 0.000 claims description 28
- 238000005507 spraying Methods 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 14
- 239000007771 core particle Substances 0.000 claims description 9
- 238000010574 gas phase reaction Methods 0.000 claims description 9
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 109
- 239000002245 particle Substances 0.000 description 44
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 229910052792 caesium Inorganic materials 0.000 description 15
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 15
- 239000002105 nanoparticle Substances 0.000 description 15
- 239000007921 spray Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 13
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 12
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 12
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 12
- 239000005642 Oleic acid Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 12
- 239000012299 nitrogen atmosphere Substances 0.000 description 12
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 12
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L tin(ii) bromide Chemical compound Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 238000000889 atomisation Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 4
- 229910000024 caesium carbonate Inorganic materials 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YKPQUSLRUFLVDA-UHFFFAOYSA-N $l^{2}-azanylmethane Chemical compound [NH]C YKPQUSLRUFLVDA-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- HQQTZCPKNZVLFF-UHFFFAOYSA-N 4h-1,2-benzoxazin-3-one Chemical class C1=CC=C2ONC(=O)CC2=C1 HQQTZCPKNZVLFF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Chemical class CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000012698 colloidal precursor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 150000005125 dioxazines Chemical class 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000002080 perylenyl group Chemical class C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical class C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- ACTRVOBWPAIOHC-UHFFFAOYSA-N succimer Chemical compound OC(=O)C(S)C(S)C(O)=O ACTRVOBWPAIOHC-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical class [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7719—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/16—Halides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/626—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
Description
実施例1では、図1に示す装置を用いて量子ドットを製造した。炭酸セシウム1.2gとオレイン酸0.4mLを1-オクタデセン5Lに投入し、150℃で60min脱気を行った。その後容器内を窒素雰囲気下としてセシウム溶液(前駆体溶液13a)を作製した。
また、臭化鉛1.5g、オレイン酸0.7mL、オレイルアミン0.7mLを6Lの1-オクタデセンへ投入し、50℃で60min脱気を行った。その後容器内を窒素雰囲気下として臭化鉛溶液(前駆体溶液14a)を作製した。
図3は、比較例1で用いた量子ドットを製造する装置を示す図である。炭酸セシウム1.2gとオレイン酸0.4Lを1-オクタデセン5Lに投入し、150℃で60min脱気を行った。その後容器内を窒素雰囲気下として、セシウム溶液(前駆体溶液33a)を作製した。
また、臭化鉛1.5g、オレイン酸0.7L、オレイルアミン0.7Lを6Lの1-オクタデセンへ投入し、50℃で60min脱気を行った。その後容器内を窒素雰囲気下として、臭化鉛溶液(前駆体溶液34a)を作製した。
図4は、比較例2で用いた量子ドットを製造する装置を示す図である。炭酸セシウム1.2gとオレイン酸0.4Lを1-オクタデセン5Lに投入し、150℃で60min脱気を行った。その後容器内を窒素雰囲気下として、セシウム溶液(前駆体溶液43a)を作製した。
また、臭化鉛1.5g、オレイン酸0.7L、オレイルアミン0.7Lを6Lの1-オクタデセンへ投入し、50℃で60min脱気を行った。その後容器内を窒素雰囲気下として、臭化鉛溶液(前駆体溶液44a)を作製した。
図5は、比較例3で用いた量子ドットを製造する装置を示す図である。炭酸セシウム1.2gとオレイン酸0.4mLを1-オクタデセン5Lに投入し、150℃で60min脱気を行った。その後容器内を窒素雰囲気下として、セシウム溶液(前駆体溶液53a)を作製した。
また、臭化鉛1.5g、オレイン酸0.7mL、オレイルアミン0.7mLを6Lの1-オクタデセンへ投入し、50℃で60min脱気を行った。その後容器内を窒素雰囲気下として、臭化鉛溶液(前駆体溶液54a)を作製した。
図2は、実施例2で用いた量子ドットを製造する装置を示す図である。臭化セシウム2.4gとオレイン酸0.5mLを1-オクタデセン8Lに投入し、150℃で60min脱気を行い、セシウム溶液(前駆体溶液23a)を作製した。その後2.4MHzの超音波霧化ユニット28を取り付けた密封容器内を窒素置換し、窒素雰囲気下とした容器内にセシウム溶液(前駆体溶液23a)を投入した。
また、臭化スズ(II)2.2g、オレイン酸1.0mL、オレイルアミン1.0mLを8Lの1-オクタデセンへ投入し、50℃で60min脱気を行い、臭化スズ(II)溶液(前駆体溶液24a)を作製した。その後2.4MHzの超音波霧化ユニット28を取り付けた密封容器内を窒素置換し、窒素雰囲気下とした容器内に臭化スズ(II)溶液(前駆体溶液24a)を投入した。
図6は、比較例4で用いた量子ドットを製造する装置を示す図である。臭化セシウム2.4gとオレイルアミン0.5mLを1-オクタデセン8Lに投入し、150℃で60min脱気を行い、セシウム溶液(前駆体溶液63a)を作製した。その後2.4MHzの超音波霧化ユニット68を取り付けた密封容器内を窒素置換し、窒素雰囲気下とした容器内にセシウム溶液(前駆体溶液63a)を投入した。
臭化スズ2.2g、オレイン酸1.0mL、オレイルアミン1.0mLを8Lの1-オクタデセンへ投入し、50℃で60min脱気を行い、臭化スズ(II)溶液(前駆体溶液64a)を作製した。その後2.4MHzの超音波霧化ユニット68を取り付けた密封容器内を窒素置換し、窒素雰囲気下とした容器内に臭化スズ(II)溶液(前駆体溶液64a)を投入した。
11、21、31、41、51、61…溶媒、
12、22、32、42、52、62…撹拌棒、
13a、14a、23a、24a、33a、34a、43a、44a、53a、54a、63a、64a…前駆体溶液、
13b、14b、23b、24b、53b、54b、63b、64b…エアロゾル、
15、25、55、65…流体ノズル、
16、33b、34b、36、46…液滴、
28、68…超音波霧化ユニット、
35、45…滴下ノズル、
37、47…プランジャーポンプ、
48…T字型ミキサー。
Claims (3)
- ペロブスカイト型の量子ドットの製造方法であって、
それぞれ異なる元素を含む複数の前駆体溶液を用い、前記複数の前駆体溶液をそれぞれ加熱し、前記前駆体溶液の温度を20~250℃とし、前記前駆体溶液のエアロゾルとしてそれぞれ噴霧し、複数の前記エアロゾルを衝突させて気相反応させ、前記前駆体溶液の温度よりも低い温度であって-10~20℃の温度とした溶媒に滴下することにより反応を停止させて、前記異なる元素を含むコア粒子を合成することを特徴とする量子ドットの製造方法。 - 前記噴霧を、1流体ノズル又は2流体ノズルを用いて行うことを特徴とする請求項1に記載の量子ドットの製造方法。
- 前記噴霧を超音波方式で行うことを特徴とする請求項1に記載の量子ドットの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020102926A JP7427541B2 (ja) | 2020-06-15 | 2020-06-15 | 量子ドットの製造方法 |
KR1020227042737A KR20230023638A (ko) | 2020-06-15 | 2021-05-06 | 양자 도트의 제조 방법 |
CN202180041886.2A CN115943122A (zh) | 2020-06-15 | 2021-05-06 | 量子点的制造方法 |
PCT/JP2021/017322 WO2021256109A1 (ja) | 2020-06-15 | 2021-05-06 | 量子ドットの製造方法 |
US18/008,707 US20230279293A1 (en) | 2020-06-15 | 2021-05-06 | A method for producing quantum dots |
TW110121359A TW202204575A (zh) | 2020-06-15 | 2021-06-11 | 量子點之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020102926A JP7427541B2 (ja) | 2020-06-15 | 2020-06-15 | 量子ドットの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021195281A JP2021195281A (ja) | 2021-12-27 |
JP7427541B2 true JP7427541B2 (ja) | 2024-02-05 |
Family
ID=79197149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020102926A Active JP7427541B2 (ja) | 2020-06-15 | 2020-06-15 | 量子ドットの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230279293A1 (ja) |
JP (1) | JP7427541B2 (ja) |
KR (1) | KR20230023638A (ja) |
CN (1) | CN115943122A (ja) |
TW (1) | TW202204575A (ja) |
WO (1) | WO2021256109A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024043081A1 (ja) * | 2022-08-23 | 2024-02-29 | 信越化学工業株式会社 | インク組成物、インク組成物の製造方法及びカラーフィルタの製造方法 |
CN116510756B (zh) * | 2023-04-28 | 2023-10-03 | 广东工业大学 | 一种高熵氟化物量子点纳米酶、制备方法及其生化检测应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018139446A1 (ja) | 2017-01-25 | 2018-08-02 | 国立研究開発法人産業技術総合研究所 | 半導体ナノ粒子製造装置及び半導体ナノ粒子の製造方法 |
WO2018220165A1 (en) | 2017-06-02 | 2018-12-06 | Nexdot | Method for obtaining encapsulated nanoparticles |
CN111909694A (zh) | 2019-05-07 | 2020-11-10 | Tcl集团股份有限公司 | 钙钛矿量子点的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007117937A (ja) * | 2005-10-31 | 2007-05-17 | Konica Minolta Medical & Graphic Inc | 微粒子粉末、その製造方法および製造装置 |
JP5940079B2 (ja) | 2010-11-10 | 2016-06-29 | ナノシス・インク. | ディスプレイバックライトユニット及びディスプレイバックライトユニットの形成方法 |
WO2012173262A1 (ja) * | 2011-06-16 | 2012-12-20 | 独立行政法人産業技術総合研究所 | エレクトロスプレーによるマイクロ反応場形成装置及び化学反応制御方法 |
US20190362968A1 (en) * | 2017-01-25 | 2019-11-28 | Hitachi Chemical Company, Ltd. | Method of producing semiconductor nanoparticle |
CN107500345A (zh) * | 2017-08-24 | 2017-12-22 | 中国科学院长春光学精密机械与物理研究所 | 一种钙钛矿量子点的制备方法 |
CN109705849A (zh) * | 2019-01-22 | 2019-05-03 | 南京华群光电技术有限公司 | 一种胺类液化钙钛矿辅助的用喷雾法制备钙钛矿量子点技术 |
-
2020
- 2020-06-15 JP JP2020102926A patent/JP7427541B2/ja active Active
-
2021
- 2021-05-06 US US18/008,707 patent/US20230279293A1/en active Pending
- 2021-05-06 WO PCT/JP2021/017322 patent/WO2021256109A1/ja active Application Filing
- 2021-05-06 CN CN202180041886.2A patent/CN115943122A/zh active Pending
- 2021-05-06 KR KR1020227042737A patent/KR20230023638A/ko active Search and Examination
- 2021-06-11 TW TW110121359A patent/TW202204575A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018139446A1 (ja) | 2017-01-25 | 2018-08-02 | 国立研究開発法人産業技術総合研究所 | 半導体ナノ粒子製造装置及び半導体ナノ粒子の製造方法 |
WO2018220165A1 (en) | 2017-06-02 | 2018-12-06 | Nexdot | Method for obtaining encapsulated nanoparticles |
CN111909694A (zh) | 2019-05-07 | 2020-11-10 | Tcl集团股份有限公司 | 钙钛矿量子点的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2021256109A1 (ja) | 2021-12-23 |
KR20230023638A (ko) | 2023-02-17 |
CN115943122A (zh) | 2023-04-07 |
TW202204575A (zh) | 2022-02-01 |
JP2021195281A (ja) | 2021-12-27 |
US20230279293A1 (en) | 2023-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7427541B2 (ja) | 量子ドットの製造方法 | |
Xuan et al. | Inkjet-printed quantum dot color conversion films for high-resolution and full-color micro light-emitting diode displays | |
US8390016B2 (en) | Method for coating semiconductor device using droplet deposition | |
CN105733556A (zh) | 一种量子点复合荧光颗粒、led模块 | |
WO2014196319A1 (ja) | 光学材料、光学フィルム及び発光デバイス | |
WO2021199852A1 (ja) | 量子ドットの製造方法 | |
WO2007102458A1 (ja) | コア/シェル型微粒子蛍光体 | |
WO2022124127A1 (ja) | 量子ドットの表面処理方法及び表面処理装置 | |
JP2002211935A (ja) | 超微粒子分散ガラス及びこれを用いた表示素子 | |
JP7273992B2 (ja) | 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 | |
WO2007034657A1 (ja) | 微粒子蛍光体とその製造方法 | |
JP2007177010A (ja) | コア/シェル型の微粒子蛍光体とその製造方法 | |
WO2023090065A1 (ja) | 量子ドットのパターニング方法、光学素子の製造方法、バックライトユニットの製造方法及び画像表示装置の製造方法 | |
JP6959119B2 (ja) | 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子 | |
KR20240108399A (ko) | 양자 도트의 패터닝 방법, 광학 소자의 제조 방법, 백라이트 유닛의 제조 방법 및 화상 표시 장치의 제조 방법 | |
WO2023176509A1 (ja) | 波長変換部材及びその製造方法 | |
CN112625688B (zh) | 核壳量子点及其制备方法、组合物及含其的电致发光器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210506 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230808 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231006 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240116 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240124 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7427541 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |