JP7423879B2 - グラフェン及びボロン窒化物ヘテロ構造デバイスの統合 - Google Patents
グラフェン及びボロン窒化物ヘテロ構造デバイスの統合 Download PDFInfo
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- JP7423879B2 JP7423879B2 JP2020568950A JP2020568950A JP7423879B2 JP 7423879 B2 JP7423879 B2 JP 7423879B2 JP 2020568950 A JP2020568950 A JP 2020568950A JP 2020568950 A JP2020568950 A JP 2020568950A JP 7423879 B2 JP7423879 B2 JP 7423879B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 206
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010941 cobalt Substances 0.000 claims description 2
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- 150000002739 metals Chemical class 0.000 description 8
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (20)
- マイクロ電子デバイスであって、
第1の導電型の半導体材料と前記半導体材料の上の誘電性材料とを有する基板であって、前記半導体材料が反対の第2の導電型の第1のコンタクトフィールド領域と前記第2の導電型の第2のコンタクトフィールド領域とを含む、前記基板と、
ゲートグラフェン構成要素であって、
前記誘電性材料の上のグラファイト層であって、グラフェンの少なくとも1つの層を含み、前記第1の導電型の前記半導体材料の上のチャネル領域と、前記チャネル領域に隣接して前記第1のコンタクトフィールド領域の上の第1のコンタクト領域と、前記チャネル領域に隣接して前記第2のコンタクトフィールド領域の上の第2のコンタクト領域とを有する、前記グラファイト層と、
前記チャネル領域の上の前記グラファイト層上のパターン化された六方晶ボロン窒化物(hBN)層と、
前記パターン化されたhBN層の上であり前記チャネル領域の上のゲートと、
を含む、前記ゲートグラフェン構成要素と、
前記ゲートグラフェン構成要素上の第1の接続であって、前記第1のコンタクト領域において前記グラファイト層に接し、前記パターン化されたhBN層が前記第1の接続の下に完全には延在しない、前記第1の接続と、
前記ゲートグラフェン構成要素上の第2の接続であって、前記第2のコンタクト領域において前記グラファイト層に接し、前記パターン化されたhBN層が前記第2の接続の下に完全には延在しない、前記第2の接続と、
を含む、マイクロ電子デバイス。 - 請求項1に記載のマイクロ電子デバイスであって、
前記パターン化されたhBN層とは反対の、前記グラファイト層の下の下側hBN層を更に含み、前記グラファイト層が前記下側hBN層上にある、マイクロ電子デバイス。 - 請求項1に記載のマイクロ電子デバイスであって、
前記ゲートグラフェン構成要素が、前記チャネル領域の上の前記パターン化されたhBN層上にゲート誘電体層を更に含み、前記ゲートが前記ゲート誘電体層の上に位置する、マイクロ電子デバイス。 - 請求項1に記載のマイクロ電子デバイスであって、
前記ゲートグラフェン構成要素が、前記第1の接続と前記第2の接続との横方向表面に隣接する誘電性材料のコンタクトスペーサを更に含み、
前記ゲートが前記コンタクトスペーサによって前記第1の接続と前記第2の接続とから横方向に分離される、マイクロ電子デバイス。 - 請求項4に記載のマイクロ電子デバイスであって、
前記コンタクトスペーサが、前記第1の接続と前記第2の接続との横方向表面に直接隣接している、マイクロ電子デバイス。 - 請求項1に記載のマイクロ電子デバイスであって、
前記第1の接続と前記第2の接続との上の障壁キャップであって、窒素とボロンとの拡散を抑制する材料を含む、前記障壁キャップを更に含む、マイクロ電子デバイス。 - 請求項6に記載のマイクロ電子デバイスであって、
前記窒素とボロンとの拡散を抑制する材料が、チタン窒化物と窒化タンタルとからなる群から選択される、マイクロ電子デバイス。 - マイクロ電子デバイスであって、
第1の導電型の半導体材料と前記半導体材料の上の誘電性材料とを有する基板であって、前記半導体材料が反対の第2の導電型の第1のコンタクトフィールド領域と前記第2の導電型の第2のコンタクトフィールド領域とを含む、前記基板と、
ゲートグラフェン構成要素であって、
前記誘電性材料の上のグラファイト層であって、少なくとも1つのグラフェンの層を含み、前記第1の導電型の前記半導体材料の上のチャネル領域と、前記チャネル領域に隣接して前記第1のコンタクトフィールド領域の上の第1のコンタクト領域と、前記チャネル領域に隣接して前記第2のコンタクトフィールド領域の上の第2のコンタクト領域とを有する、前記グラファイト層と、
前記チャネル領域の上の前記グラファイト層上のパターン化された六方晶ボロン窒化物(hBN)層と、
前記パターン化されたhBN層の上であって前記チャネル領域の上のゲートと、
を含む、前記ゲートグラフェン構成要素と、
前記グラファイト層上の第1の接続であって、前記第1のコンタクト領域において前記グラファイト層に接し、前記パターン化されたhBN層が前記第1の接続の下に完全には延在しない、前記第1の接続と、
前記グラファイト層上の第2の接続であって、前記第2のコンタクト領域において前記グラファイト層に接し、前記パターン化されたhBN層が前記第2の接続の下に完全には延在しない、前記第2の接続と、
を含み、
前記第1のコンタクトフィールド領域から前記グラファイト層への直接の電気的接続と前記第2のコンタクトフィールド領域から前記グラファイト層への直接の電気的接続とがない、マイクロ電子デバイス。 - マイクロ電子デバイスを形成する方法であって、
第1の導電型の半導体材料と前記半導体材料の上の誘電性材料とを含む基板であって、前記半導体材料が反対の第2の導電型の第1のコンタクトフィールド領域と前記第2の導電型の第2のコンタクトフィールド領域とを含む、前記基板を提供することと、
前記基板の誘電体材料の上にグラフェンの少なくとも1つの層を含むグラファイト層を形成することであって、前記グラファイト層がチャネル領域と前記チャネル領域に隣接して前記第1のコンタクトフィールド領域の上の第1のコンタクト領域と前記チャネル領域に隣接して前記第2のコンタクトフィールド領域の上の第2のコンタクト領域とを有する、前記グラファイト層を形成することと、
前記第1のコンタクト領域において前記グラファイト層と接する第1の接続を形成することと、
前記第2のコンタクト領域において前記グラファイト層に接する第2の接続を形成することと、
前記グラファイト層上に第1の金属層を形成することと、
前記第1の金属層におけるボロンと窒素との拡散と、第1の金属層からの沈殿とによって、前記チャネル領域の上の前記グラファイト層上にパターン化された六方晶ボロン窒化物(hBN)層を形成することであって、前記パターン化されたhBN層が第1の接続の下で完全には延在せず、前記パターン化されたhBN層が第2の接続の下で完全には延在しないように、前記パターン化されたhBN層を形成することと、
前記チャネル領域の上の前記パターン化されたhBN層の上にゲートを形成することと、
を含む、方法。 - 請求項9に記載の方法であって、
前記パターン化されたhBN層を形成する前に、前記第1の接続と記第2の接続との上に障壁キャップを形成することであって、前記障壁キャップが窒素とボロンとの拡散を抑制する材料を含む、前記障壁キャップを形成することとを更に含む、方法。 - 請求項9に記載の方法であって、
前記第1の金属層が、コバルトとニッケルと銅とルテニウムとロジウムとパラジウムと銀とレニウムとイリジウムとプラチナと金とからなる群から選択される金属を含む、方法。 - 請求項9に記載の方法であって、
前記第1の金属層からの前記パターン化されたhBN層の沈殿が、
前記第1の金属層を400°C~800°Cまで加熱することと、
前記第1の金属層が400°C~800°Cの温度にある間に、ボロン含有試薬を用いて前記第1の金属層にボロンを導入することと、
前記第1の金属層が400°C~800°Cの温度にある間に、窒素含有試薬を用いて前記第1の金属層に窒素を導入することと、
続いて前記第1の金属層を冷却することと、
を含む、方法。 - 請求項9に記載の方法であって、
前記第1の金属層からの前記パターン化されたhBN層の沈殿が、
第1のイオン注入プロセスを用いて前記第1の金属層へボロンを注入することと、
第2のイオン注入プロセスを用いて前記第1の金属層へ窒素を注入することと、
前記ボロンと前記窒素を注入した後、前記第1の金属層を400°C~800°Cまで加熱することと、
続いて前記第1の金属層を冷却することと、
を含む、方法。 - 請求項9に記載の方法であって、
前記グラファイト層を形成する前に下側hBN層を形成することを更に含み、
前記グラファイト層が前記下側hBN層上に形成される、方法。 - 請求項14に記載の方法であって、
前記基板の誘電性材料の上に第2の金属層を形成することを更に含み、
前記下側hBN層が、第2の金属層におけるボロンと窒素との拡散と、前記第2の金属層からの沈殿とによって形成される、方法。 - 請求項9に記載の方法であって、
前記基板の誘電性材料の上に第3の金属層を形成することを更に含み、
前記グラファイト層が、第3の金属層における炭素の拡散と、前記第3の金属層からの沈殿とによって形成される、方法。 - 請求項9に記載の方法であって、
前記基板の誘電性材料上に第2の金属層を形成することと、
前記第2の金属層におけるボロンと窒素との拡散と前記第2の金属層からの沈殿とによって、前記第2の金属層の上に下側hBN層を形成することと、
を更に含む、方法。 - 請求項9に記載の方法であって、
前記ゲートを形成する前に、前記パターン化されたhBN層の上にゲート誘電体層を形成することを更に含み、
前記ゲートが前記ゲート誘電体層の上に形成される、方法。 - 請求項9に記載の方法であって、
前記ゲートを形成する前に、前記第1の接続と前記第2の接続との横方向表面に隣接する前記誘電性材料のコンタクトスペーサを形成することであって、前記コンタクトスペーサが前記チャネル領域の上に延在せず、前記ゲートが前記コンタクトスペーサによって前記第1の接続と第2の接続とから横方向に分離される、前記コンタクトスペーサを形成することを更に含む、方法。 - 請求項19に記載の方法であって、
前記コンタクトスペーサが、前記第1の接続と前記第2の接続と前記チャネル領域との上にコンフォーマルスペーサ層を形成することと、その後、異方性エッチングプロセスにより前記チャネル領域の上の前記コンフォーマルスペーサ層を除去することとによって形成される、方法。
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US10490673B2 (en) | 2019-11-26 |
US20190273166A1 (en) | 2019-09-05 |
EP3759731A4 (en) | 2021-04-21 |
CN111788657B (zh) | 2024-09-10 |
US20200075779A1 (en) | 2020-03-05 |
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