JP7421880B2 - トレンチキャパシタ - Google Patents
トレンチキャパシタ Download PDFInfo
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- JP7421880B2 JP7421880B2 JP2019139672A JP2019139672A JP7421880B2 JP 7421880 B2 JP7421880 B2 JP 7421880B2 JP 2019139672 A JP2019139672 A JP 2019139672A JP 2019139672 A JP2019139672 A JP 2019139672A JP 7421880 B2 JP7421880 B2 JP 7421880B2
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- 239000003990 capacitor Substances 0.000 title claims description 66
- 239000000463 material Substances 0.000 claims description 48
- 239000010410 layer Substances 0.000 description 87
- 238000000034 method Methods 0.000 description 25
- 239000011241 protective layer Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000002787 reinforcement Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Description
Claims (6)
- 上面、前記上面とは反対側の下面、及び上下方向に沿って前記上面から延びる複数のトレンチを画定する壁部を有する基材と、
第1導電層、第2導電層、及び前記第1導電層と前記第2導電層とに挟まれた誘電体層を有し、前記壁部に沿って設けられたMIM構造体と、を備え、
前記壁部は、前記上面に沿った第1方向において、前記トレンチが設けられたトレンチ領域の一端から他端まで延びる複数の主壁部と、前記第1方向と交差し前記上面に沿った第2方向に延びて隣り合う前記主壁部同士を接続する複数の副壁部と、を含み、
前記複数の主壁部は、第1主壁部と、前記第1主壁部に隣り合う第2主壁部と、前記第2主壁部に隣り合う第3主壁部と、を含み、
前記複数の副壁部は、前記第1主壁部及び前記第2主壁部を接続する複数の第1副壁部と、前記第2主壁部及び前記第3主壁部を接続する複数の第2副壁部と、を含み、
前記複数のトレンチは、上方から見て、前記第1主壁部、前記第2主壁部、及び前記複数の第1副壁部のうち前記第1方向において隣り合う一組の第1副壁部により囲まれる領域全体において開口する第1トレンチを含み、
上方から見て、前記第1方向における前記第1副壁部の位置と前記第2副壁部の位置とは互いにずれている、トレンチキャパシタ。 - 前記複数の主壁部は、前記第3主壁部に隣り合う第4主壁部を含み、
前記複数の副壁部は、前記第3主壁部及び前記第4主壁部を接続する複数の第3副壁部を含み、
上方から見て、前記第1方向における前記第1副壁部の位置と前記第3副壁部の位置とは略同一である、請求項1に記載のトレンチキャパシタ。 - 前記複数の主壁部は、前記第3主壁部に隣り合う第4主壁部を含み、
前記複数の副壁部は、前記第3主壁部及び前記第4主壁部を接続する複数の第3副壁部を含み、
上方から見て、前記第1方向における前記第1副壁部の位置と前記第3副壁部の位置とは互いにずれている、請求項1に記載のトレンチキャパシタ。 - 上方から見て、前記複数のトレンチのそれぞれの形状は略同一である、請求項1~3の何れか一項に記載のトレンチキャパシタ。
- 請求項1~4の何れか一項に記載のトレンチキャパシタを備える、回路基板。
- 請求項5に記載の回路基板を備える、電子機器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019139672A JP7421880B2 (ja) | 2019-07-30 | 2019-07-30 | トレンチキャパシタ |
PCT/JP2020/028613 WO2021020322A1 (ja) | 2019-07-30 | 2020-07-27 | トレンチキャパシタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019139672A JP7421880B2 (ja) | 2019-07-30 | 2019-07-30 | トレンチキャパシタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021022692A JP2021022692A (ja) | 2021-02-18 |
JP7421880B2 true JP7421880B2 (ja) | 2024-01-25 |
Family
ID=74229121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019139672A Active JP7421880B2 (ja) | 2019-07-30 | 2019-07-30 | トレンチキャパシタ |
Country Status (2)
Country | Link |
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JP (1) | JP7421880B2 (ja) |
WO (1) | WO2021020322A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7317649B2 (ja) * | 2019-09-20 | 2023-07-31 | 株式会社東芝 | コンデンサ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008251972A (ja) | 2007-03-30 | 2008-10-16 | Tdk Corp | 薄膜コンデンサ |
JP2011121226A (ja) | 2009-12-09 | 2011-06-23 | Canon Inc | インクジェット記録装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6424453A (en) * | 1987-07-20 | 1989-01-26 | Fujitsu Ltd | Manufacture of semiconductor device |
-
2019
- 2019-07-30 JP JP2019139672A patent/JP7421880B2/ja active Active
-
2020
- 2020-07-27 WO PCT/JP2020/028613 patent/WO2021020322A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008251972A (ja) | 2007-03-30 | 2008-10-16 | Tdk Corp | 薄膜コンデンサ |
JP2011121226A (ja) | 2009-12-09 | 2011-06-23 | Canon Inc | インクジェット記録装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021022692A (ja) | 2021-02-18 |
WO2021020322A1 (ja) | 2021-02-04 |
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