JP7391186B2 - 圧電磁器組成物及び圧電アクチュエータ - Google Patents
圧電磁器組成物及び圧電アクチュエータ Download PDFInfo
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- JP7391186B2 JP7391186B2 JP2022512108A JP2022512108A JP7391186B2 JP 7391186 B2 JP7391186 B2 JP 7391186B2 JP 2022512108 A JP2022512108 A JP 2022512108A JP 2022512108 A JP2022512108 A JP 2022512108A JP 7391186 B2 JP7391186 B2 JP 7391186B2
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- 238000012935 Averaging Methods 0.000 description 1
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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- 238000000691 measurement method Methods 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Description
実施形態に係る圧電磁器組成物は、ニオブ酸カリウムナトリウム系(KNN系、ニオブ酸アルカリ系)のペロブスカイト型複合酸化物を主成分として含んでいる。圧電磁器組成物は、例えば、鉛(Pb)を含んでいない。
図1は、透過型電子顕微鏡(TEM:Transmission Electron Microscope)を用いて得られる圧電磁器組成物101の断面の画像(以下、TEM画像)を模式化して示す図である。この図は、実際に得られた画像のうち概ね5μm2の範囲を模式化して示している。
偏析部107において、Biの質量%は、位置によらずに概ね一定であってもよいし、一定でなくてもよい。同様に、結晶粒103内の偏析部107以外の領域(非偏析部109)又は粒界105において、Biの質量%は、位置によらずに概ね一定であってもよいし、一定でなくてもよい。また、非偏析部109におけるBiの質量%(例えばその平均値)と、粒界105におけるBiの質量%(例えばその平均値)とは、互いに同一であってもよいし、互いに異なっていてもよい。Biについて述べたが、Zrについても同様である。
既述のように、圧電磁器組成物101の主成分は、KNN系のペロブスカイト型複合酸化物であり、組成式ABO3によって表される。組成式ABO3を具体化した式の一例を以下に示す。組成式ABO3は、例えば、以下の(1)式とされてよい。
{(K1-vNav)1-w-x-αLiwAgxA1α}y{(Nb1-zSbz)1-βB1β}O3
…(1)
圧電磁器組成物101は、主成分(KNN系のペロブスカイト型複合酸化物)以外の副成分として、適宜な材料を含んでよい。例えば、圧電磁器組成物101は、Mnを更に含んでいてもよい。圧電磁器組成物101は、Mnを含むことによって、例えば、広い温度範囲において圧電定数を高くすることができる。
本実施形態に係る圧電磁器組成物の製造方法は、ニオブ酸カリウムナトリウムに添加される具体的な金属元素の種類及びそのモル比を除いては、公知のニオブ酸カリウムナトリウム系の圧電磁器組成物の製造方法と同様とされてよい。圧電磁器組成物101の主成分であるKNN系のペロブスカイト型複合酸化物の組成式が(1)式で表される態様を例に取ると、例えば、以下のとおりである。
(偏析部の影響)
偏析部107を有する実施例に係る圧電磁器組成物と、偏析部107を有さない比較例に係る圧電磁器組成物とを作製した。そして、両者の比較から、偏析部によって抵抗率が高くなる(絶縁性が向上する)ことを確認した。具体的には、以下のとおりである。
実施例:d31=119(pC/N)、Ec=1.15(kV/cm)、ρ=1.1×1011(Ωm)
比較例:d31=114(pC/N)、Ec=1.14(kV/cm)、ρ=9.4×1010(Ωm)
上述した実施例及び比較例に係る圧電磁器組成物に関して、偏析部107、非偏析部109及び粒界105それぞれにおける成分比を測定した。これにより、偏析部107を形成することによって抵抗率が高くなる上述の原理が正しいことを確認した。
偏析部107は、KNN系のペロブスカイト型複合酸化物がAサイトにBiを含み、BサイトにZrを含む限り形成可能である。従って、偏析部107を形成する技術は、上述した実施例に係る組成を有する圧電磁器組成物((1)式で表される複合酸化物を主成分とする圧電磁器組成物)以外の種々の圧電磁器組成物に適用されてよい。もちろん、偏析部107を形成する技術は、(1)式で表される複合酸化物を主成分として含む圧電磁器組成物に適用されてよいし、この場合において、圧電定数及び/又は抗電界を向上させる観点から適宜にモル比の値が設定されてよい。以下では、実施例を参照して(1)式におけるモル比の値の例を示す。
0.015(No.8)≦w≦0.020(No.8以外)
0.0000(No.1及び2)≦x≦0.0384(No.12)
0.02(No.5、11及び12)≦z≦0.06(No.4)
0.015(No.8)≦α≦0.020(No.8以外)
0.03(No.8)≦β≦0.04(No.8以外)
図5は、圧電磁器組成物の応用例を示す断面図である。この断面図は、インクジェット式のヘッド11の一部を示している。図5の紙面下方(-D3側)は、記録媒体(例えば紙)が配置される側である。
Claims (8)
- 組成式ABO3で表されるニオブ酸カリウムナトリウム系のペロブスカイト型複合酸化物を主成分として含む圧電磁器組成物であって、
AサイトにBiを含み、BサイトにZrを含み、
結晶粒内に位置し、Zr及びBiの少なくとも一方が偏在している偏析部を有しており、
断面視において、
1以上の結晶粒内に位置する複数の前記偏析部が0.05μm以上の円相当径を有する第1偏析部を含んでおり、
5μm 2 当たり1個以上の割合で複数の前記第1偏析部を有している
圧電磁器組成物。 - 前記複合酸化物に加えてMnを更に含み、
前記複合酸化物が、組成式{(K1-vNav)1-w-x-αLiwAgxA1α}y{(Nb1-zSbz)1-βB1β}O3で表され、
A1がBiを含み、B1がZrを含み、
以下の不等式、
0.550≦v≦0.625、
0.015≦w≦0.020、
0.0000≦x≦0.0384、
0.99≦y≦1.01、
0.02≦z≦0.06、
0.015≦α≦0.020、及び
0.03≦β≦0.04、が満たされ、
Mnが前記複合酸化物の100質量部に対してMnO2換算で0.01質量部以上0.50質量部以下含まれている
請求項1に記載の圧電磁器組成物。 - 粒界におけるBiの質量%が、結晶粒内の前記偏析部以外の部分におけるBiの質量%よりも低い
請求項1又は2に記載の圧電磁器組成物。 - 粒界におけるZrの質量%が、結晶粒内の前記偏析部以外の部分におけるZrの質量%よりも低い
請求項1~3のいずれか1項に記載の圧電磁器組成物。 - 前記圧電磁器組成物の断面において前記偏析部が占める面積割合が1%以上である
請求項1~4のいずれか1項に記載の圧電磁器組成物。 - 前記偏析部におけるBiの質量%が、結晶粒内の前記偏析部以外の部分におけるBiの質量%、及び粒界におけるBiの質量%それぞれの1.1倍以上である
請求項1~5のいずれか1項に記載の圧電磁器組成物。 - 前記偏析部におけるZrの質量%が、結晶粒内の前記偏析部以外の部分におけるZrの質量%、及び粒界におけるZrの質量%それぞれの2.0倍以上である
請求項1~6のいずれか1項に記載の圧電磁器組成物。 - 請求項1~7のいずれか1項に記載の圧電磁器組成物からなる圧電部材と、
前記圧電部材に電圧を印加する電極と、
を有している圧電アクチュエータ。
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WO2006117990A1 (ja) | 2005-04-28 | 2006-11-09 | Murata Manufacturing Co., Ltd. | 圧電体磁器組成物、及び該圧電体磁器組成物の製造方法、並びに圧電セラミック電子部品 |
WO2007094115A1 (ja) | 2006-02-17 | 2007-08-23 | Murata Manufacturing Co., Ltd. | 圧電磁器組成物 |
JP2009242167A (ja) | 2008-03-31 | 2009-10-22 | Tdk Corp | 圧電磁器及びそれを用いた圧電素子 |
WO2013008418A1 (ja) | 2011-07-13 | 2013-01-17 | 日本特殊陶業株式会社 | 無鉛圧電磁器組成物およびその製造方法、ならびにその組成物を用いた圧電素子、超音波加工機、超音波駆動デバイスおよびセンシングデバイス |
JP2014069988A (ja) | 2012-09-28 | 2014-04-21 | Kyocera Corp | 圧電磁器およびそれを用いた圧電素子 |
JP2016219669A (ja) | 2015-05-23 | 2016-12-22 | 京セラ株式会社 | 圧電素子、およびそれを用いた圧電部材、液体吐出ヘッド、ならびに記録装置 |
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WO2006117990A1 (ja) | 2005-04-28 | 2006-11-09 | Murata Manufacturing Co., Ltd. | 圧電体磁器組成物、及び該圧電体磁器組成物の製造方法、並びに圧電セラミック電子部品 |
WO2007094115A1 (ja) | 2006-02-17 | 2007-08-23 | Murata Manufacturing Co., Ltd. | 圧電磁器組成物 |
JP2009242167A (ja) | 2008-03-31 | 2009-10-22 | Tdk Corp | 圧電磁器及びそれを用いた圧電素子 |
WO2013008418A1 (ja) | 2011-07-13 | 2013-01-17 | 日本特殊陶業株式会社 | 無鉛圧電磁器組成物およびその製造方法、ならびにその組成物を用いた圧電素子、超音波加工機、超音波駆動デバイスおよびセンシングデバイス |
JP2014069988A (ja) | 2012-09-28 | 2014-04-21 | Kyocera Corp | 圧電磁器およびそれを用いた圧電素子 |
JP2016219669A (ja) | 2015-05-23 | 2016-12-22 | 京セラ株式会社 | 圧電素子、およびそれを用いた圧電部材、液体吐出ヘッド、ならびに記録装置 |
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US20230131275A1 (en) | 2023-04-27 |
EP4101827A4 (en) | 2023-08-16 |
EP4101827A1 (en) | 2022-12-14 |
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WO2021200632A1 (ja) | 2021-10-07 |
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