JP7390299B2 - 半導体レーザー - Google Patents
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- JP7390299B2 JP7390299B2 JP2020543369A JP2020543369A JP7390299B2 JP 7390299 B2 JP7390299 B2 JP 7390299B2 JP 2020543369 A JP2020543369 A JP 2020543369A JP 2020543369 A JP2020543369 A JP 2020543369A JP 7390299 B2 JP7390299 B2 JP 7390299B2
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- 239000004065 semiconductor Substances 0.000 title claims description 128
- 238000005253 cladding Methods 0.000 claims description 109
- 230000005855 radiation Effects 0.000 claims description 98
- 238000000576 coating method Methods 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004382 potting Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 139
- 239000000463 material Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- H01S2301/00—Functional characteristics
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- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
2 半導体積層体
20 導波路
21 第1のクラッド層
22 第2のクラッド層
25 活性領域
30 反射面
31 第1のファセット
32 第2のファセット
41 第1の電気接触面
42 第2の電気接触面
43 第1の接触面の金属部品
44 第1の接触面のTCT-部品
45 貫通接続
5 レーザー放射再集束用レンズ
50 第1のクラッド層の放射通路領域
61 反射防止コーティング
62 反射コーティング
63 回折素子
7 スピーゲルミラー
71 誘電体層
72 金属層
8 ポッティング
9 電流制限層
D 反射面の上の第1のクラッド層の最大厚さ
FWHM レーザー放射のスペクトルの半値全幅(単位:nm)
I 電流密度(単位:A/cm2)
L レーザー放射
M レーザー放射の最大強度の波長
P 任意の単位Rにおけるレーザー放射の光出力
R 活性領域の主延在方向/共振器軸
b ファセットと共振器軸と間の角度
Claims (13)
- 半導体積層体(2)を有し、電極(41、42)を有する半導体レーザー(1)であって、
前記半導体積層体(2)は、活性領域(25)を有する導波路(20)を含み、
前記半導体積層体(2)は、前記導波路(20)がその間に位置する、第1のクラッド層(21)及び第2のクラッド層(22)を含み、
少なくとも1つのファセット(31)は、最大で10°の許容範囲で、共振器軸(R)及び前記活性領域(25)の主延在方向に対して45°の角度を有し、前記ファセット(31)は、動作中に前記活性領域(25)に生成されるレーザー放射(L)のために、前記第1のクラッド層(21)に向けて反射する反射面(30)であり、
前記第1のクラッド層(21)の最大厚さは、0.5M/n以上10M/n以下であり、nは、前記第1のクラッド層(21)の平均屈折率であり、Mは、前記レーザー放射(L)の最大強度(L)の真空波長であり、
放射通路領域(50)の前記第1のクラッド層(21)は、前記活性領域(25)に戻される前記レーザー放射(L)の一部を再集束させるレンズ(5)として形成され、
以下の関係が、前記レンズ(5)の曲率、R(z)に適用される、
半導体レーザー(1)。 - 前記半導体レーザー(1)が、共振器軸(R)が、前記導波路(20)内の前記活性領域(25)の主延在方向に並行であり、前記導波路(20)が、前記第1のクラッド層(21)及び前記第2のクラッド層(22)よりも前記レーザー放射(L)に対してより高い屈折率を有する、表面放射レーザーであって、前記第1のクラッド層(21)は、前記レーザー放射(L)に対して導波路構造を有さないので、前記レーザー放射は、前記第1のクラッド層(21)内の前記活性領域(25)に垂直な方向に自由に伝播する、請求項1に記載の半導体レーザー(1)。
- 前記第1のクラッド層(21)上に配置された前記電極(41)の金属部品(43)が、平面図において前記共振器軸(R)と重なり合わない、請求項1又は2に記載の半導体レーザー(1)。
- 前記第1のクラッド層(21)上に位置する前記電極(41)は、前記レーザー放射(L)に対して透明な透明導電性酸化物の部品(44)を含み、前記部品(44)の屈折率は、前記第1のクラッド層(21)の屈折率以下である、請求項1乃至3のいずれか1項に記載の半導体レーザー(1)。
- 前記半導体積層体(2)は、前記共振器軸(R)と平行で、前記活性領域(25)と垂直な横断面で見て、対称的な台形として形成され、前記共振器軸(R)は、許容範囲が最大で10°で前記共振器軸(R)に対して45°の角度(b)を有するファセット(31、32)によって、終端される、請求項1乃至4のいずれか1項に記載の半導体レーザー(1)。
- 前記共振器軸(R)を制限する前記半導体積層体(2)のちょうど1つのファセット(32)が、前記共振器軸(R)に対して垂直で、最大で10°の許容範囲で配置される、請求項1乃至4のいずれか1項に記載の半導体レーザー(1)。
- 前記放射通路領域(50)の前記第1のクラッド層(21)には、前記レーザー放射(L)用の反射防止コーティング(61)が設けられている、請求項1乃至6のいずれか1項に記載の半導体レーザー(1)。
- 前記レーザー放射(L)のための反射コーティング(62)は、前記活性領域(25)に並行で、最大で20°の許容範囲で配向され、前記第1のクラッド層(21)の少なくとも他の1つの点に配置されている、前記請求項1乃至7のいずれか1項に記載の半導体レーザー(1)。
- 前記少なくとも1つの反射面(30)は、前記レーザー放射(L)のためのミラー(7)を備えている、請求項1乃至8のいずれか1項に記載の半導体レーザー(1)。
- 前記ミラー(7)は、前記反射面(30)のすぐ上の前記レーザー放射(L)に対して最大で1.7の屈折率を有する誘電体層(71)を有し、前記ミラー(7)の金属層(72)は、前記反射面(30)から離れて面する前記誘電体層(71)の側面に配置される、請求項9に記載の半導体レーザー(1)。
- 前記半導体積層体(2)は、前記共振器軸(R)と平行で、前記活性領域(25)と垂直な横断面で見て、光学的効果のコーティング(61、62、7)及びミラー(7)と共に前記電極(41、42)によって完全に包まれている、請求項1乃至10のいずれか1項に記載の半導体レーザー(1)。
- 前記半導体積層体(2)の成長基板を含まない、請求項1乃至11のいずれか1項に記載の半導体レーザー(1)。
- 前記半導体レーザー(1)は、前記共振器軸(R)と平行で、前記活性領域(25)と垂直な横断面で見たときに矩形状であるように、前記反射面(30)を有する少なくとも前記ファセット(31)上に配置されたポッティング(8)をさらに備える、請求項1乃至12のいずれか1項に記載の半導体レーザー(1)。
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DE102018105080.1A DE102018105080A1 (de) | 2018-03-06 | 2018-03-06 | Halbleiterlaser |
DE102018105080.1 | 2018-03-06 | ||
PCT/EP2019/055386 WO2019170636A1 (de) | 2018-03-06 | 2019-03-05 | Halbleiterlaser |
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JP7390299B2 true JP7390299B2 (ja) | 2023-12-01 |
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DE (1) | DE102018105080A1 (ja) |
WO (1) | WO2019170636A1 (ja) |
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DE102019100532A1 (de) | 2019-01-10 | 2020-07-16 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
DE102020202645A1 (de) | 2020-03-02 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserchip und verfahren zur herstellung eines halbleiterlaserchips |
DE102020106638A1 (de) | 2020-03-11 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterlaserbauelement und optoelektronische anordnung |
DE102020112969B4 (de) | 2020-05-13 | 2024-02-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender halbleiterchip, rücklicht für ein kraftfahrzeug und kraftfahrzeug |
DE102020125899A1 (de) | 2020-10-02 | 2022-04-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische anordnung zur erzeugung eines lichtmusters, verfahren zu dessen herstellung und tiefenerfassungssystem |
DE102021108200A1 (de) | 2021-03-31 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip |
CN113131330B (zh) * | 2021-03-31 | 2022-10-21 | 杭州耀芯科技有限公司 | 一种激光器发光功率监测系统、监测方法及其准直透镜 |
DE102021113856A1 (de) | 2021-05-28 | 2022-12-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und bauteil |
DE102021121026A1 (de) | 2021-08-12 | 2023-02-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von Halbleiterlaserchips und Halbleiterlaserchip |
DE102021210621A1 (de) | 2021-09-23 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung |
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