JP7366521B2 - 半導体装置、及びその製造方法 - Google Patents
半導体装置、及びその製造方法 Download PDFInfo
- Publication number
- JP7366521B2 JP7366521B2 JP2018039192A JP2018039192A JP7366521B2 JP 7366521 B2 JP7366521 B2 JP 7366521B2 JP 2018039192 A JP2018039192 A JP 2018039192A JP 2018039192 A JP2018039192 A JP 2018039192A JP 7366521 B2 JP7366521 B2 JP 7366521B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- solvent
- semiconductor device
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/66—Conductive materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Formation Of Insulating Films (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023116021A JP7607089B2 (ja) | 2017-03-22 | 2023-07-14 | 半導体装置、及びその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017056225 | 2017-03-22 | ||
| JP2017056225 | 2017-03-22 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023116021A Division JP7607089B2 (ja) | 2017-03-22 | 2023-07-14 | 半導体装置、及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018160665A JP2018160665A (ja) | 2018-10-11 |
| JP7366521B2 true JP7366521B2 (ja) | 2023-10-23 |
Family
ID=63795739
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018039192A Active JP7366521B2 (ja) | 2017-03-22 | 2018-03-06 | 半導体装置、及びその製造方法 |
| JP2023116021A Active JP7607089B2 (ja) | 2017-03-22 | 2023-07-14 | 半導体装置、及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023116021A Active JP7607089B2 (ja) | 2017-03-22 | 2023-07-14 | 半導体装置、及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10354932B2 (https=) |
| JP (2) | JP7366521B2 (https=) |
| TW (1) | TWI691525B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7241502B2 (ja) * | 2018-10-18 | 2023-03-17 | 旭化成株式会社 | 感光性樹脂組成物、硬化レリーフパターンの製造方法 |
| JP7370229B2 (ja) * | 2018-12-28 | 2023-10-27 | 旭化成株式会社 | 半導体装置、及びその製造方法 |
| JP7267812B2 (ja) * | 2019-03-29 | 2023-05-02 | 太陽ホールディングス株式会社 | 感光性樹脂組成物、ドライフィルム、硬化物、および電子部品 |
| KR102888048B1 (ko) * | 2019-11-19 | 2025-11-20 | 듀폰스페셜티머터리얼스코리아 유한회사 | 감광성 수지 조성물 및 이로부터 제조된 절연막 |
| KR102669551B1 (ko) * | 2020-02-20 | 2024-05-28 | 스미또모 베이크라이트 가부시키가이샤 | 감광성 수지 조성물의 제조 방법 |
| WO2021172421A1 (ja) * | 2020-02-28 | 2021-09-02 | 富士フイルム株式会社 | 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス |
| TWI904246B (zh) * | 2020-09-29 | 2025-11-11 | 日商富士軟片股份有限公司 | 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體元件 |
| TWI825626B (zh) * | 2021-03-26 | 2023-12-11 | 日商富士軟片股份有限公司 | 感光性樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體元件 |
| KR20240031210A (ko) * | 2021-07-05 | 2024-03-07 | 가부시끼가이샤 레조낙 | 감광성 수지 조성물, 영구 레지스트, 영구 레지스트의 형성 방법, 및 영구 레지스트용 경화막의 검사 방법 |
| CN113759046A (zh) * | 2021-09-23 | 2021-12-07 | 上海彤程电子材料有限公司 | 气相色谱-质谱联用检测光刻胶膜中丙二醇甲醚醋酸酯的方法及半导体器件的加工工艺 |
| WO2025182048A1 (ja) * | 2024-02-29 | 2025-09-04 | Hdマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、パターン硬化物、及び電子部品 |
| WO2025182050A1 (ja) * | 2024-02-29 | 2025-09-04 | Hdマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、パターン硬化物、及び電子部品 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000043439A1 (fr) | 1999-01-21 | 2000-07-27 | Asahi Kasei Kabushiki Kaisha | Ester d'acide polyamique |
| JP2004006452A (ja) | 2002-05-31 | 2004-01-08 | Hitachi Ltd | 半導体装置 |
| JP2010155895A (ja) | 2008-12-26 | 2010-07-15 | Asahi Kasei E-Materials Corp | 組成物、組成物からなる塗膜、塗膜を含む積層体、及び積層体を組み込んだ電子機器 |
| JP2013038270A (ja) | 2011-08-09 | 2013-02-21 | Fujitsu Ltd | 電子装置及びその製造方法 |
| WO2013111241A1 (ja) | 2012-01-25 | 2013-08-01 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体及びそれを用いた樹脂組成物 |
| WO2017038664A1 (ja) | 2015-08-31 | 2017-03-09 | 富士フイルム株式会社 | 組成物、硬化膜、硬化膜の製造方法、半導体デバイスの製造方法および半導体デバイス |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5815309B2 (ja) | 2011-07-05 | 2015-11-17 | 旭化成イーマテリアルズ株式会社 | アルカリ可溶性重合体、それを含む感光性樹脂組成物、及びその用途 |
| JP2017523134A (ja) * | 2014-05-30 | 2017-08-17 | ダウ コーニング コーポレーションDow Corning Corporation | モノアミノシラン化合物 |
| CN107407876A (zh) | 2015-03-06 | 2017-11-28 | 东丽株式会社 | 感光性树脂组合物及电子部件 |
-
2018
- 2018-03-06 JP JP2018039192A patent/JP7366521B2/ja active Active
- 2018-03-14 US US15/920,863 patent/US10354932B2/en active Active
- 2018-03-21 TW TW107109576A patent/TWI691525B/zh active
-
2023
- 2023-07-14 JP JP2023116021A patent/JP7607089B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000043439A1 (fr) | 1999-01-21 | 2000-07-27 | Asahi Kasei Kabushiki Kaisha | Ester d'acide polyamique |
| JP2004006452A (ja) | 2002-05-31 | 2004-01-08 | Hitachi Ltd | 半導体装置 |
| JP2010155895A (ja) | 2008-12-26 | 2010-07-15 | Asahi Kasei E-Materials Corp | 組成物、組成物からなる塗膜、塗膜を含む積層体、及び積層体を組み込んだ電子機器 |
| JP2013038270A (ja) | 2011-08-09 | 2013-02-21 | Fujitsu Ltd | 電子装置及びその製造方法 |
| WO2013111241A1 (ja) | 2012-01-25 | 2013-08-01 | 日立化成デュポンマイクロシステムズ株式会社 | ポリイミド前駆体及びそれを用いた樹脂組成物 |
| WO2017038664A1 (ja) | 2015-08-31 | 2017-03-09 | 富士フイルム株式会社 | 組成物、硬化膜、硬化膜の製造方法、半導体デバイスの製造方法および半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| US10354932B2 (en) | 2019-07-16 |
| JP2018160665A (ja) | 2018-10-11 |
| JP2023138531A (ja) | 2023-10-02 |
| TWI691525B (zh) | 2020-04-21 |
| US20180342432A1 (en) | 2018-11-29 |
| JP7607089B2 (ja) | 2024-12-26 |
| TW201841989A (zh) | 2018-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7607089B2 (ja) | 半導体装置、及びその製造方法 | |
| JP7408599B2 (ja) | 感光性樹脂組成物及び硬化レリーフパターンの製造方法 | |
| KR101827069B1 (ko) | 페놀 수지 조성물 그리고 경화 릴리프 패턴 및 반도체의 제조 방법 | |
| JP2019197227A (ja) | 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置 | |
| JP5968227B2 (ja) | アルカリ現像用感光性樹脂組成物、硬化レリーフパターン及び半導体装置 | |
| JP6026097B2 (ja) | 半導体素子表面保護膜又は層間絶縁膜用の感光性樹脂組成物 | |
| JP5981738B2 (ja) | 感光性樹脂組成物、及び硬化レリーフパターンの製造方法 | |
| JP5825884B2 (ja) | フェノール樹脂組成物、及び硬化レリーフパターンの製造方法 | |
| JP5859257B2 (ja) | フェノール樹脂組成物並びに硬化レリーフパターン及び半導体の製造方法 | |
| JP5981737B2 (ja) | 感光性樹脂組成物、及び硬化レリーフパターンの製造方法 | |
| JP5879088B2 (ja) | 感光性樹脂組成物、及び、硬化レリーフパターンの製造方法 | |
| JP2014178471A (ja) | 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置 | |
| JP6108869B2 (ja) | 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置 | |
| JP6270372B2 (ja) | 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置 | |
| JP5808155B2 (ja) | フェノール樹脂組成物並びにこれを用いた硬化レリーフパターンの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210203 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220125 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220328 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221014 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221214 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230418 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230714 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230728 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231003 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231011 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7366521 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |