JP7353729B2 - 半導体装置、半導体装置の製造方法 - Google Patents

半導体装置、半導体装置の製造方法 Download PDF

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JP7353729B2
JP7353729B2 JP2018022399A JP2018022399A JP7353729B2 JP 7353729 B2 JP7353729 B2 JP 7353729B2 JP 2018022399 A JP2018022399 A JP 2018022399A JP 2018022399 A JP2018022399 A JP 2018022399A JP 7353729 B2 JP7353729 B2 JP 7353729B2
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wiring
area
semiconductor device
conductive patterns
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JP2019140253A (ja
JP2019140253A5 (https=
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達也 領木
洋史 戸塚
昌弘 小林
英明 石野
広明 小林
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Canon Inc
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Canon Inc
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Priority to US17/175,447 priority patent/US11742373B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2018022399A 2018-02-09 2018-02-09 半導体装置、半導体装置の製造方法 Active JP7353729B2 (ja)

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Application Number Priority Date Filing Date Title
JP2018022399A JP7353729B2 (ja) 2018-02-09 2018-02-09 半導体装置、半導体装置の製造方法
US16/269,054 US10957732B2 (en) 2018-02-09 2019-02-06 Semiconductor device and method of manufacturing semiconductor device
US17/175,447 US11742373B2 (en) 2018-02-09 2021-02-12 Semiconductor device and method of manufacturing semiconductor device

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JP2018022399A JP7353729B2 (ja) 2018-02-09 2018-02-09 半導体装置、半導体装置の製造方法

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JP7562306B2 (ja) 2020-06-23 2024-10-07 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP2022018705A (ja) 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置
JP2022040579A (ja) * 2020-08-31 2022-03-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および、半導体装置の製造方法
US12147083B2 (en) * 2020-12-16 2024-11-19 Intel Corporation Hybrid manufacturing for integrating photonic and electronic components
JP7690308B2 (ja) 2021-03-31 2025-06-10 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2022255286A1 (ja) * 2021-05-30 2022-12-08 唯知 須賀 半導体基板接合体及びその製造方法
CN113555352B (zh) * 2021-07-20 2022-08-26 长江存储科技有限责任公司 三维存储器
JP7844128B2 (ja) * 2021-10-12 2026-04-13 キヤノン株式会社 半導体装置
CN115985886A (zh) * 2021-10-15 2023-04-18 西安紫光国芯半导体有限公司 一种三维芯片
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JP2024000909A (ja) * 2022-06-21 2024-01-09 キオクシア株式会社 半導体装置及び半導体記憶装置
KR20240002437A (ko) 2022-06-29 2024-01-05 삼성전자주식회사 이미지 센서
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WO2024252866A1 (ja) * 2023-06-06 2024-12-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
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US11742373B2 (en) 2023-08-29
JP2019140253A (ja) 2019-08-22
US10957732B2 (en) 2021-03-23
US20210167113A1 (en) 2021-06-03
US20190252444A1 (en) 2019-08-15

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