JP7332680B2 - ウエハーツーウエハーボンディングのためのメサ形成 - Google Patents

ウエハーツーウエハーボンディングのためのメサ形成 Download PDF

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JP7332680B2
JP7332680B2 JP2021506560A JP2021506560A JP7332680B2 JP 7332680 B2 JP7332680 B2 JP 7332680B2 JP 2021506560 A JP2021506560 A JP 2021506560A JP 2021506560 A JP2021506560 A JP 2021506560A JP 7332680 B2 JP7332680 B2 JP 7332680B2
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eye
layer
bonding
semiconductor material
contact
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JP2021535588A5 (https=
JP2021535588A (ja
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ウィリアム パードリック ヘンリー，
ジェームズ ロナルド ボナー，
ガレス バレンタイン，
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Meta Platforms Technologies LLC
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Meta Platforms Technologies LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0093—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for monitoring data relating to the user, e.g. head-tracking, eye-tracking

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  • User Interface Of Digital Computer (AREA)
  • Led Devices (AREA)
JP2021506560A 2018-09-11 2019-08-14 ウエハーツーウエハーボンディングのためのメサ形成 Active JP7332680B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862729820P 2018-09-11 2018-09-11
US62/729,820 2018-09-11
US16/436,794 US11056611B2 (en) 2018-09-11 2019-06-10 Mesa formation for wafer-to-wafer bonding
US16/436,794 2019-06-10
PCT/US2019/046536 WO2020055537A1 (en) 2018-09-11 2019-08-14 Mesa formation for wafer -to-wafer bonding

Publications (3)

Publication Number Publication Date
JP2021535588A JP2021535588A (ja) 2021-12-16
JP2021535588A5 JP2021535588A5 (https=) 2023-06-07
JP7332680B2 true JP7332680B2 (ja) 2023-08-23

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JP2021506560A Active JP7332680B2 (ja) 2018-09-11 2019-08-14 ウエハーツーウエハーボンディングのためのメサ形成

Country Status (6)

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US (2) US11056611B2 (https=)
EP (1) EP3850667B1 (https=)
JP (1) JP7332680B2 (https=)
KR (1) KR20210046065A (https=)
CN (1) CN112740412A (https=)
WO (1) WO2020055537A1 (https=)

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US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US12142717B2 (en) 2020-04-09 2024-11-12 Raysolve Optoelectronics (Suzhou) Company Limited Light emitting diode structure and method for manufacturing the same
CN112864290B (zh) * 2020-04-09 2022-04-22 镭昱光电科技(苏州)有限公司 微型led显示器及其制造方法
TW202512546A (zh) 2020-12-28 2025-03-16 大陸商上海顯耀顯示科技有限公司 微發光二極體結構及包括該結構之微發光二極體晶片

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JP2015526889A (ja) 2012-06-22 2015-09-10 ソイテックＳｏｉｔｅｃ Ｌｅｄ又は太陽電池セルの構造を製造する方法
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JP2016178307A (ja) 2015-03-20 2016-10-06 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 発光ダイオードを備えた光電子デバイス

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US11056611B2 (en) 2021-07-06
JP2021535588A (ja) 2021-12-16
WO2020055537A1 (en) 2020-03-19
EP3850667A1 (en) 2021-07-21
CN112740412A (zh) 2021-04-30
EP3850667B1 (en) 2023-03-15
US20210367097A1 (en) 2021-11-25
KR20210046065A (ko) 2021-04-27
US20200083402A1 (en) 2020-03-12

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