KR20210046065A - 웨이퍼 대 웨이퍼 접합을 위한 메사 형성 - Google Patents

웨이퍼 대 웨이퍼 접합을 위한 메사 형성 Download PDF

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Publication number
KR20210046065A
KR20210046065A KR1020217009584A KR20217009584A KR20210046065A KR 20210046065 A KR20210046065 A KR 20210046065A KR 1020217009584 A KR1020217009584 A KR 1020217009584A KR 20217009584 A KR20217009584 A KR 20217009584A KR 20210046065 A KR20210046065 A KR 20210046065A
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South Korea
Prior art keywords
semiconductor material
bonding
layer
eye
display
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KR1020217009584A
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English (en)
Korean (ko)
Inventor
윌리엄 파드레익 헨리
제임스 로널드 보너
개리스 발렌타인
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페이스북 테크놀로지스, 엘엘씨
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Publication of KR20210046065A publication Critical patent/KR20210046065A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H01L33/0093—
    • H01L27/156—
    • H01L33/0095—
    • H01L33/145—
    • H01L33/20—
    • H01L33/58—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0093—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for monitoring data relating to the user, e.g. head-tracking, eye-tracking
    • H01L2933/0025—
    • H01L2933/0033—
    • H01L2933/0058—
    • H01L2933/0066—

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  • User Interface Of Digital Computer (AREA)
  • Led Devices (AREA)
KR1020217009584A 2018-09-11 2019-08-14 웨이퍼 대 웨이퍼 접합을 위한 메사 형성 Withdrawn KR20210046065A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862729820P 2018-09-11 2018-09-11
US62/729,820 2018-09-11
US16/436,794 US11056611B2 (en) 2018-09-11 2019-06-10 Mesa formation for wafer-to-wafer bonding
US16/436,794 2019-06-10
PCT/US2019/046536 WO2020055537A1 (en) 2018-09-11 2019-08-14 Mesa formation for wafer -to-wafer bonding

Publications (1)

Publication Number Publication Date
KR20210046065A true KR20210046065A (ko) 2021-04-27

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Family Applications (1)

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KR1020217009584A Withdrawn KR20210046065A (ko) 2018-09-11 2019-08-14 웨이퍼 대 웨이퍼 접합을 위한 메사 형성

Country Status (6)

Country Link
US (2) US11056611B2 (https=)
EP (1) EP3850667B1 (https=)
JP (1) JP7332680B2 (https=)
KR (1) KR20210046065A (https=)
CN (1) CN112740412A (https=)
WO (1) WO2020055537A1 (https=)

Cited By (2)

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US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing

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US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US12142717B2 (en) 2020-04-09 2024-11-12 Raysolve Optoelectronics (Suzhou) Company Limited Light emitting diode structure and method for manufacturing the same
CN112864290B (zh) * 2020-04-09 2022-04-22 镭昱光电科技(苏州)有限公司 微型led显示器及其制造方法
TW202512546A (zh) 2020-12-28 2025-03-16 大陸商上海顯耀顯示科技有限公司 微發光二極體結構及包括該結構之微發光二極體晶片

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US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing

Also Published As

Publication number Publication date
US11056611B2 (en) 2021-07-06
JP2021535588A (ja) 2021-12-16
WO2020055537A1 (en) 2020-03-19
EP3850667A1 (en) 2021-07-21
CN112740412A (zh) 2021-04-30
JP7332680B2 (ja) 2023-08-23
EP3850667B1 (en) 2023-03-15
US20210367097A1 (en) 2021-11-25
US20200083402A1 (en) 2020-03-12

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