CN112740412A - 用于晶圆到晶圆键合的台面形成 - Google Patents

用于晶圆到晶圆键合的台面形成 Download PDF

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Publication number
CN112740412A
CN112740412A CN201980059390.0A CN201980059390A CN112740412A CN 112740412 A CN112740412 A CN 112740412A CN 201980059390 A CN201980059390 A CN 201980059390A CN 112740412 A CN112740412 A CN 112740412A
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China
Prior art keywords
semiconductor material
layer
bonding
eye
display
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Pending
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CN201980059390.0A
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English (en)
Chinese (zh)
Inventor
威廉·帕德里克·亨利
詹姆斯·罗纳德·博纳
加雷思·瓦伦丁
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Meta Platforms Technologies LLC
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Facebook Technologies LLC
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Publication of CN112740412A publication Critical patent/CN112740412A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0093—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for monitoring data relating to the user, e.g. head-tracking, eye-tracking

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  • User Interface Of Digital Computer (AREA)
  • Led Devices (AREA)
CN201980059390.0A 2018-09-11 2019-08-14 用于晶圆到晶圆键合的台面形成 Pending CN112740412A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862729820P 2018-09-11 2018-09-11
US62/729,820 2018-09-11
US16/436,794 US11056611B2 (en) 2018-09-11 2019-06-10 Mesa formation for wafer-to-wafer bonding
US16/436,794 2019-06-10
PCT/US2019/046536 WO2020055537A1 (en) 2018-09-11 2019-08-14 Mesa formation for wafer -to-wafer bonding

Publications (1)

Publication Number Publication Date
CN112740412A true CN112740412A (zh) 2021-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980059390.0A Pending CN112740412A (zh) 2018-09-11 2019-08-14 用于晶圆到晶圆键合的台面形成

Country Status (6)

Country Link
US (2) US11056611B2 (https=)
EP (1) EP3850667B1 (https=)
JP (1) JP7332680B2 (https=)
KR (1) KR20210046065A (https=)
CN (1) CN112740412A (https=)
WO (1) WO2020055537A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US12142717B2 (en) 2020-04-09 2024-11-12 Raysolve Optoelectronics (Suzhou) Company Limited Light emitting diode structure and method for manufacturing the same
CN112864290B (zh) * 2020-04-09 2022-04-22 镭昱光电科技(苏州)有限公司 微型led显示器及其制造方法
TW202512546A (zh) 2020-12-28 2025-03-16 大陸商上海顯耀顯示科技有限公司 微發光二極體結構及包括該結構之微發光二極體晶片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090106294A (ko) * 2008-04-04 2009-10-08 송준오 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
CN101617415A (zh) * 2009-03-27 2009-12-30 香港应用科技研究院有限公司 制造薄膜半导体结构的方法
US20140361321A1 (en) * 2013-06-10 2014-12-11 Sony Corporation Light-emitting element wafer, light emitting element, electronic apparatus, and method of producing light-emitting element wafer
CN104396030A (zh) * 2012-06-22 2015-03-04 索泰克公司 制造led或太阳能电池的结构的方法
US20150236201A1 (en) * 2012-09-03 2015-08-20 Infiniled Limited Optical device

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
JP4449113B2 (ja) * 1999-09-10 2010-04-14 ソニー株式会社 ２次元表示装置
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
DE602004028115D1 (de) 2003-05-02 2010-08-26 Univ College Cork Nat Univ Ie Lichtemittierende mesastrukturen mit hohem höhe-zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung
TWI240434B (en) 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
JP4818732B2 (ja) 2005-03-18 2011-11-16 シャープ株式会社 窒化物半導体素子の製造方法
CN102106001B (zh) * 2008-04-02 2014-02-12 宋俊午 发光器件及其制造方法
CA2727095C (en) 2008-06-06 2020-01-07 Bionano Genomics, Inc. Integrated analysis devices and related fabrication methods and analysis techniques
EP2151852B1 (en) 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
TWI395350B (zh) 2010-01-04 2013-05-01 國立成功大學 半導體發光晶片的製作方法及半導體發光晶片
US9312240B2 (en) 2011-01-30 2016-04-12 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices
WO2012113205A1 (en) 2011-02-22 2012-08-30 Hong Kong Applied Science And Technology Research Institute Co., Ltd Vertical light emitting diode device structure and method of fabricating the same
US8754424B2 (en) 2011-08-29 2014-06-17 Micron Technology, Inc. Discontinuous patterned bonds for semiconductor devices and associated systems and methods
KR101898680B1 (ko) * 2012-11-05 2018-09-13 삼성전자주식회사 나노구조 발광 소자
WO2014160394A1 (en) * 2013-03-13 2014-10-02 The Regents Of The University Of California Active layer-incorporated, spectrally-tuned nanostructure-based light trapping for organic photovoltaic devices
WO2014158422A1 (en) * 2013-03-13 2014-10-02 The Board Of Trustees Of The Leland Stanford Junior University Confocal and concave 1d photonic crystal resonant cavities with ultra-low mode volume
GB201402508D0 (en) * 2014-02-13 2014-04-02 Mled Ltd Semiconductor modification process and structures
JP2015195332A (ja) * 2014-03-27 2015-11-05 株式会社東芝 半導体発光装置及びその製造方法
US9759839B2 (en) * 2014-06-17 2017-09-12 Elwha Llc Photonic band gap structure with sub-wavelength scattering elements
GB201420860D0 (en) 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
FR3033939B1 (fr) 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente
EP3307674A4 (en) * 2015-06-15 2019-03-13 Griffith University LUMINESCENT PHOTONIC STRUCTURE, METHOD FOR PRODUCING LUMINESCENT PHOTONIC STRUCTURE AND METHOD FOR DETECTING A CHEMICAL SUBSTANCE
CN108352143B (zh) 2015-09-02 2021-04-16 脸谱科技有限责任公司 半导体器件的组装
US10304811B2 (en) 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
US10297711B2 (en) 2015-12-30 2019-05-21 Globalfoundries Singapore Pte. Ltd. Integrated LED and LED driver units and methods for fabricating the same
US10325893B2 (en) 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
WO2018223391A1 (en) 2017-06-09 2018-12-13 Goertek. Inc Micro-led array transfer method, manufacturing method and display device
WO2019028314A1 (en) 2017-08-03 2019-02-07 Cree, Inc. HIGH DENSITY PIXELIZED LED CHIPS AND NETWORK DEVICES AND METHODS OF MANUFACTURE
US11056611B2 (en) * 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US10727267B2 (en) * 2018-09-12 2020-07-28 Sensors Unlimited, Inc. Interconnect bump structures for photo detectors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090106294A (ko) * 2008-04-04 2009-10-08 송준오 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
CN101617415A (zh) * 2009-03-27 2009-12-30 香港应用科技研究院有限公司 制造薄膜半导体结构的方法
CN104396030A (zh) * 2012-06-22 2015-03-04 索泰克公司 制造led或太阳能电池的结构的方法
US20150236201A1 (en) * 2012-09-03 2015-08-20 Infiniled Limited Optical device
US20140361321A1 (en) * 2013-06-10 2014-12-11 Sony Corporation Light-emitting element wafer, light emitting element, electronic apparatus, and method of producing light-emitting element wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing

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US11056611B2 (en) 2021-07-06
JP2021535588A (ja) 2021-12-16
WO2020055537A1 (en) 2020-03-19
EP3850667A1 (en) 2021-07-21
JP7332680B2 (ja) 2023-08-23
EP3850667B1 (en) 2023-03-15
US20210367097A1 (en) 2021-11-25
KR20210046065A (ko) 2021-04-27
US20200083402A1 (en) 2020-03-12

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Effective date of abandoning: 20250926