JP7332530B2 - 排ガス浄化装置 - Google Patents
排ガス浄化装置 Download PDFInfo
- Publication number
- JP7332530B2 JP7332530B2 JP2020075418A JP2020075418A JP7332530B2 JP 7332530 B2 JP7332530 B2 JP 7332530B2 JP 2020075418 A JP2020075418 A JP 2020075418A JP 2020075418 A JP2020075418 A JP 2020075418A JP 7332530 B2 JP7332530 B2 JP 7332530B2
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- Prior art keywords
- catalyst layer
- inflow
- cell
- side catalyst
- outflow
- Prior art date
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- 239000003054 catalyst Substances 0.000 claims description 305
- 239000000463 material Substances 0.000 claims description 131
- 238000005192 partition Methods 0.000 claims description 114
- 239000011148 porous material Substances 0.000 claims description 67
- 239000002002 slurry Substances 0.000 claims description 63
- 239000002923 metal particle Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 35
- 230000003197 catalytic effect Effects 0.000 claims description 33
- 238000000746 purification Methods 0.000 claims description 31
- 238000010304 firing Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052753 mercury Inorganic materials 0.000 claims description 8
- 238000002459 porosimetry Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 213
- 239000007789 gas Substances 0.000 description 118
- 239000002245 particle Substances 0.000 description 21
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 15
- 239000010948 rhodium Substances 0.000 description 15
- 239000000835 fiber Substances 0.000 description 14
- 238000001035 drying Methods 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000005022 packaging material Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000003426 co-catalyst Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000007429 general method Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 229910052703 rhodium Inorganic materials 0.000 description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
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- 239000012466 permeate Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum titanate Chemical compound 0.000 description 3
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000007561 laser diffraction method Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
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- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920003043 Cellulose fiber Polymers 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- F01N2510/0682—Surface coverings for exhaust purification, e.g. catalytic reaction characterised by the distribution of the catalytic coatings having a discontinuous, uneven or partially overlapping coating of catalytic material, e.g. higher amount of material upstream than downstream or vice versa
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Combustion & Propulsion (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Toxicology (AREA)
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Description
(1)ハニカム基材と流入セル側触媒層とを備える排ガス浄化装置であって、
ハニカム基材は、流入側端面から流出側端面まで延びる複数のセルを画成する多孔質の隔壁を有し、
複数のセルは、隔壁を挟んで隣接する流入セル及び流出セルを含み、
流入セルは、流入側端が開口し、流出側端が封止され、
流出セルは、流入側端が封止され、流出側端が開口し、
流入セル側触媒層は、流入セル側の隔壁の表面上において隔壁の流入側端から設けられており、
流入セル側触媒層の空隙率は、流入セル側触媒層の断面の走査型顕微鏡(SEM)画像を2値化処理した場合に0.1%~8%であることを特徴とする排ガス浄化装置。
(2)流入セル側触媒層の細孔径4μm~10μmの細孔に基づく空隙率が、水銀ポロシメトリー法により測定した場合に1%~5%である、(1)に記載の排ガス浄化装置。
(3)流入セル側触媒層が、流入セル側の隔壁の表面上において隔壁の流入側端からハニカム基材の延伸方向の全長の5%~90%の位置までに設けられている、(1)又は(2)に記載の排ガス浄化装置。
(4)流入セル側触媒層の含有量が、ハニカム基材の流入セル側触媒層が設けられている部分の体積1L当たり30g~150gである、(1)~(3)のいずれか1つに記載の排ガス浄化装置。
(5)流出セル側の隔壁の表面上において隔壁の流出側端から設けられている流出セル側触媒層をさらに備える、(1)~(4)のいずれか1つに記載の排ガス浄化装置。
(6)(1)~(5)のいずれか1つに記載のハニカム基材と流入セル側触媒層とを備える排ガス浄化装置の製造方法であって、
当該製造方法は、ハニカム基材の流入セル内に流入セル側触媒層形成用スラリーを供給してスラリー流入セル側触媒層を形成すること、及びスラリー流入セル側触媒層形成後のハニカム基材を焼成することを含み、
流入セル側触媒層形成用スラリーは、流入セル側触媒層の全重量に対して1重量%~3重量%の造孔材を含む
排ガス浄化装置の製造方法。
(7)造孔材が繊維状造孔材であり、造孔材の平均直径が0.7μm~15μmであり、造孔材の平均アスペクト比が9~40である、(6)に記載の方法。
本明細書では、適宜図面を参照して本発明の特徴を説明する。図面では、明確化のために各部の寸法及び形状を誇張しており、実際の寸法及び形状を正確に描写してはいない。それ故、本発明の技術的範囲は、これら図面に表された各部の寸法及び形状に限定されるものではない。なお、本発明の排ガス浄化装置及びその製造方法は、下記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において、当業者が行い得る変更、改良等を施した種々の形態にて実施することができる。
ハニカム基材は、流入側端面から流出側端面まで延びる複数のセルを画成する多孔質の隔壁を有する。そして、複数のセルは、隔壁を挟んで隣接する流入セル及び流出セルを含み、流入セルは、流入側端が開口し、流出側端が封止され、流出セルは、流入側端が封止され、流出側端が開口している。ハニカム基材は、いわゆるウォールフロー型のハニカム基材である。
本発明の排ガス浄化装置において、流入セル側触媒層は、流入セル側の隔壁の表面上において隔壁の流入側端から設けられている。
(1)流入セル側触媒層の断面について、SEMの反射電子像(倍率:3000倍)を撮影し、撮影されたSEM画像を、解析ソフト、例えばWinROOFを用いて2値化して、流入セル側触媒層中の気孔を選別する。
(2)(1)で選別された気孔の流入セル側触媒層全面積中の割合(%)を求める。
(3)(1)及び(2)のステップを10画像で実施し、平均値を求める。
本発明の排ガス浄化装置では、流出セル側触媒層が、流出セル側の隔壁の表面上又は内部領域において隔壁の流出側端からさらに設けられていてもよい。
流出セル側触媒層の延伸方向の長さは、ハニカム基材の延伸方向の全長の、通常10%~100%、好ましくは30%~100%、より好ましくは50%~100%である。長さがこれらの範囲の下限を超えるかそれ以上であることにより、高負荷の運転条件で排ガスの流速が高い状況でも排ガスの流出セル側触媒層への接触時間を十分に長くすることで浄化性能を向上できる。
流出セル側触媒層の延伸方向の長さは、ハニカム基材の延伸方向の全長の、通常10%~100%、好ましくは30%~100%、より好ましくは50%~100%ある。長さがこれらの範囲の下限を超えるかそれ以上であることにより、高負荷の運転条件で排ガスの流速が高い状況でも排ガスの流出セル側触媒層への接触時間を十分に長くすることで浄化性能を向上できる。
流入セル側触媒層の形成において、導入される造孔材と空隙率の関係を調査するために、添加する造孔材の量を変更して触媒層を形成させた。
まず、ストレートフロー構造のハニカム基材の隔壁の表面上に、0.3g/L-catとなるように調整された硝酸Rh、アルミナ、OSC材、触媒層の全重量に対してそれぞれ0重量%、1重量%、2.5重量%、5重量%、又は6重量%の繊維状造孔材(ここで、繊維状造孔材としては、平均直径が4μmのポリエチレンテレフタレート製の繊維(平均アスペクト比:14)からなる繊維状造孔材を使用した)、及び水を含む触媒層形成用スラリーを用いて、スラリー触媒層を形成した。続いて、スラリー触媒層を200℃で2時間通風乾燥させた後に、スラリー触媒層形成後のハニカム基材を500℃で1時間焼成して触媒層を形成させた。
(1)形成させた触媒層の断面を露出させ、露出させた断面について、以下の条件、
装置:HITACHI S-4800
出力:15kV
倍率:3000倍
により、SEMの反射電子像を撮影し、撮影されたSEM画像を、解析ソフト:WinROOFを用いて2値化して、触媒層中の気孔を選別した。
(2)(1)で選別された気孔の触媒層全面積中の割合(%)を求めた。
(3)(1)及び(2)のステップを10画像で実施し、平均値を求めた。
図3に、造孔材の量とSEM画像を2値化処理することで求めた空隙率の関係を示す。
(実施例1)
図5のa)において模式的に示される、以下のウォールフロー構造のハニカム基材
ハニカム基材の形状:円筒形
ハニカム基材のサイズ:直径117mm×高さ(軸方向の長さ)122mm
セル構造:300セル/inch2
隔壁の厚さ:200μm
の流入セル側の隔壁の表面上において、0.3g/L-catとなるように調整された硝酸Rh、アルミナ、OSC材、流入セル側触媒層の全重量に対して2.5重量%の造孔材(1.造孔材と空隙率の関係で使用した造孔材)、及び水を含む流入セル側触媒層形成用スラリーを用いて、スラリー流入セル側触媒層を形成した。続いて、スラリー流入セル側触媒層を200℃で2時間通風乾燥させた後に、スラリー流入セル側触媒層形成後のハニカム基材を500℃で1時間焼成した。
実施例1において、造孔材を添加しない以外は、実施例1と同様にして排ガス浄化装置を製造した。
実施例1において、造孔材の含有量を流入セル側触媒層の全重量に対して5.0重量%に調整する以外は、実施例1と同様にして排ガス浄化装置を製造した。
以下のストレートフロー構造のハニカム基材
ハニカム基材の形状:円筒形
ハニカム基材のサイズ:直径117mm×高さ(軸方向の長さ)122mm
セル構造:400セル/inch2
隔壁の厚さ:115μm
の隔壁の表面上において、0.3g/L-catとなるように調整された硝酸Rh、アルミナ、OSC材、触媒層の全重量に対して2.5重量%の造孔材(1.造孔材と空隙率の関係で使用した造孔材)、及び水を含む触媒層形成用スラリーを用いて、スラリー触媒層を形成した。続いて、スラリー触媒層を200℃で2時間乾燥させた後に、スラリー触媒層形成後のハニカム基材を500℃で1時間焼成した。
参考例1において、造孔材の含有量を触媒層の全重量に対して5.0重量%に調整する以外は、参考例1と同様にして排ガス浄化装置を製造した。
実施例1及び比較例1~2並びに参考例1~2の排ガス浄化装置について、図6に示す評価レイアウトに基づいて、2.5Lガソリンベンチにてストイキガスを熱交換機を通して200℃~600℃の温度範囲で、NOx浄化率を測定した。
表2及び図7に造孔材の量と各排ガス浄化装置のNOx最大浄化率の関係を示す。
Claims (8)
- ハニカム基材と流入セル側触媒層と流出セル側触媒層とを備える排ガス浄化装置であって、
ハニカム基材は、流入側端面から流出側端面まで延びる複数のセルを画成する多孔質の隔壁を有し、
複数のセルは、隔壁を挟んで隣接する流入セル及び流出セルを含み、
流入セルは、流入側端が開口し、流出側端が封止され、
流出セルは、流入側端が封止され、流出側端が開口し、
流入セル側触媒層は、流入セル側の隔壁の表面上において隔壁の流入側端から設けられており、
流出セル側触媒層は、流出セル側の隔壁の内部領域において隔壁の流出側端から設けられており、
流入セル側触媒層と流出セル側触媒層とは、ハニカム基材の延伸方向に重複しており、
流入セル側触媒層の空隙率は、流入セル側触媒層の断面の走査型顕微鏡(SEM)画像を2値化処理した場合に0.1%~8%であることを特徴とする排ガス浄化装置。 - 流入セル側触媒層の厚さが、隔壁の厚さの5%~30%の範囲である、請求項1に記載の排ガス浄化装置。
- 流入セル側触媒層が、触媒金属粒子としてRhを含む、請求項1又は2に記載の排ガス浄化装置。
- 流入セル側触媒層の細孔径4μm~10μmの細孔に基づく空隙率が、水銀ポロシメトリー法により測定した場合に1%~5%である、請求項1~3のいずれか一項に記載の排ガス浄化装置。
- 流入セル側触媒層が、流入セル側の隔壁の表面上において隔壁の流入側端からハニカム基材の延伸方向の全長の5%~90%の位置までに設けられている、請求項1~4のいずれか一項に記載の排ガス浄化装置。
- 流入セル側触媒層の含有量が、ハニカム基材の流入セル側触媒層が設けられている部分の体積1L当たり30g~150gである、請求項1~5のいずれか一項に記載の排ガス浄化装置。
- 請求項1~6のいずれか一項に記載のハニカム基材と流入セル側触媒層と流出セル側触媒層とを備える排ガス浄化装置の製造方法であって、
当該製造方法は、ハニカム基材の流入セル内に流入セル側触媒層形成用スラリーを供給してスラリー流入セル側触媒層を形成すること、スラリー流入セル側触媒層形成後のハニカム基材を焼成すること、ハニカム基材の流出セル内に流出セル側触媒層形成用スラリーを供給してスラリー流出セル側触媒層を形成すること、及びスラリー流出セル側触媒層形成後のハニカム基材を焼成することを含み、
流入セル側触媒層形成用スラリーは、流入セル側触媒層の全重量に対して1重量%~3重量%の造孔材を含む
排ガス浄化装置の製造方法。 - 造孔材が繊維状造孔材であり、造孔材の平均直径が0.7μm~15μmであり、造孔材の平均アスペクト比が9~40である、請求項7に記載の方法。
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