JP7325294B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP7325294B2
JP7325294B2 JP2019190052A JP2019190052A JP7325294B2 JP 7325294 B2 JP7325294 B2 JP 7325294B2 JP 2019190052 A JP2019190052 A JP 2019190052A JP 2019190052 A JP2019190052 A JP 2019190052A JP 7325294 B2 JP7325294 B2 JP 7325294B2
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electrode
potential
period
plasma
plasma processing
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JP2019190052A
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Japanese (ja)
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JP2021064750A (ja
JP2021064750A5 (https=
Inventor
淳一 佐々木
康晴 佐々木
秀敏 花岡
知彦 秋山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019190052A priority Critical patent/JP7325294B2/ja
Priority to US17/027,792 priority patent/US11417500B2/en
Priority to CN202011056120.5A priority patent/CN112687511B/zh
Priority to KR1020200128721A priority patent/KR102825584B1/ko
Publication of JP2021064750A publication Critical patent/JP2021064750A/ja
Priority to US17/810,523 priority patent/US11923171B2/en
Publication of JP2021064750A5 publication Critical patent/JP2021064750A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019190052A 2019-10-17 2019-10-17 プラズマ処理装置及びプラズマ処理方法 Active JP7325294B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019190052A JP7325294B2 (ja) 2019-10-17 2019-10-17 プラズマ処理装置及びプラズマ処理方法
US17/027,792 US11417500B2 (en) 2019-10-17 2020-09-22 Plasma processing apparatus and plasma processing method
CN202011056120.5A CN112687511B (zh) 2019-10-17 2020-09-30 等离子体处理装置及等离子体处理方法
KR1020200128721A KR102825584B1 (ko) 2019-10-17 2020-10-06 플라즈마 처리 장치 및 플라즈마 처리 방법
US17/810,523 US11923171B2 (en) 2019-10-17 2022-07-01 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019190052A JP7325294B2 (ja) 2019-10-17 2019-10-17 プラズマ処理装置及びプラズマ処理方法

Publications (3)

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JP2021064750A JP2021064750A (ja) 2021-04-22
JP2021064750A5 JP2021064750A5 (https=) 2022-07-12
JP7325294B2 true JP7325294B2 (ja) 2023-08-14

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JP2019190052A Active JP7325294B2 (ja) 2019-10-17 2019-10-17 プラズマ処理装置及びプラズマ処理方法

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US (2) US11417500B2 (https=)
JP (1) JP7325294B2 (https=)
KR (1) KR102825584B1 (https=)
CN (1) CN112687511B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7378276B2 (ja) * 2019-11-12 2023-11-13 東京エレクトロン株式会社 プラズマ処理装置
JP7638930B2 (ja) * 2021-05-31 2025-03-04 東京エレクトロン株式会社 プラズマ処理装置
JPWO2023026908A1 (https=) * 2021-08-27 2023-03-02
US20230060192A1 (en) * 2021-09-02 2023-03-02 Entegris, Inc. Methods and apparatus for processing an electrostatic chuck
WO2026004597A1 (ja) * 2024-06-25 2026-01-02 東京エレクトロン株式会社 プラズマ処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088686A (ja) 2013-11-01 2015-05-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP2016058589A (ja) 2014-09-11 2016-04-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016122740A (ja) 2014-12-25 2016-07-07 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
JP2018078168A (ja) 2016-11-08 2018-05-17 パナソニックＩｐマネジメント株式会社 プラズマ処理方法およびプラズマ処理装置
JP2018206935A (ja) 2017-06-02 2018-12-27 東京エレクトロン株式会社 プラズマ処理装置、静電吸着方法および静電吸着プログラム
JP2018206804A (ja) 2017-05-30 2018-12-27 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP2019004027A (ja) 2017-06-14 2019-01-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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JP3426972B2 (ja) * 1998-07-07 2003-07-14 三菱重工業株式会社 Ｓｉ系生成物製造装置内部の洗浄方法及び装置
CN100501939C (zh) * 2004-10-05 2009-06-17 东京毅力科创株式会社 等离子体成膜方法和等离子体成膜装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
JP5960384B2 (ja) * 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
WO2019065710A1 (ja) * 2017-09-29 2019-04-04 住友大阪セメント株式会社 静電チャック装置
JP7204350B2 (ja) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
US11587817B2 (en) * 2020-10-21 2023-02-21 Applied Materials, Inc. High temperature bipolar electrostatic chuck

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088686A (ja) 2013-11-01 2015-05-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP2016058589A (ja) 2014-09-11 2016-04-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016122740A (ja) 2014-12-25 2016-07-07 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
JP2018078168A (ja) 2016-11-08 2018-05-17 パナソニックＩｐマネジメント株式会社 プラズマ処理方法およびプラズマ処理装置
JP2018206804A (ja) 2017-05-30 2018-12-27 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP2018206935A (ja) 2017-06-02 2018-12-27 東京エレクトロン株式会社 プラズマ処理装置、静電吸着方法および静電吸着プログラム
JP2019004027A (ja) 2017-06-14 2019-01-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
KR102825584B1 (ko) 2025-06-26
CN112687511B (zh) 2025-09-12
US20210118647A1 (en) 2021-04-22
KR20210045927A (ko) 2021-04-27
US20220336193A1 (en) 2022-10-20
CN112687511A (zh) 2021-04-20
US11417500B2 (en) 2022-08-16
JP2021064750A (ja) 2021-04-22
US11923171B2 (en) 2024-03-05

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