JP2016058589A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- 238000003672 processing method Methods 0.000 claims abstract description 10
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- 230000015572 biosynthetic process Effects 0.000 claims description 17
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- 230000003247 decreasing effect Effects 0.000 claims description 5
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- 238000005530 etching Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 13
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- 239000011247 coating layer Substances 0.000 description 11
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Drying Of Semiconductors (AREA)
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Abstract
Description
Claims (6)
- 真空容器内部に配置され減圧された内側の空間でプラズマが形成される処理室と、この処理室内に配置され前記プラズマを用いた処理対象のウエハがその上面に載せられるステージと、前記ステージの上部に配置され前記ウエハを当該ステージ上面に静電吸着して保持する電力が供給される電極と、前記プラズマを用いた処理中に前記ステージに高周波電力を供給する高周波電源とを備え、複数枚の前記ウエハを一枚ずつ連続的に処理するプラズマ処理装置であって、
前記プラズマを用いた処理が異なる条件で実施される複数の処理ステップとこれら処理ステップ同士の間でプラズマの形成が停止されている複数の期間とを有し、
任意の前記ウエハの前記処理の開始前に前記処理室の内壁に皮膜を形成する工程が実施されるものであって、各々の前記プラズマの形成が停止されている期間において前記電極に供給される電圧を前記処理室内に浮遊して帯電した粒子の各極性のバランスに応じて変化させるプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記ステージの上方でその上面に対向して配置され前記処理室の天井面を構成する石英製のプレートと、前記ステージの上面の上方であって処理室の内側壁を構成する石英製の円筒部材とを備え、
前記皮膜が少なくとも前記プレート及び円筒部材の表面に形成されるものであって、
前記複数のプラズマが停止されている期間において前記電極に供給される電圧により前記ウエハに形成される電位が時間の経過に伴って低下させるプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記複数のプラズマが停止されている期間において前記電極に供給される電圧により前記ウエハに形成される電位が前記ウエハの処理の枚数の増加に伴って低下させるプラズマ処理装置。
- 真空容器内部に配置され減圧された内側に配置されたステージ上面に処理対象のウエハを載せ、前記ステージの上部に配置された電極に電力を供給して前記ウエハを当該ステージ上面に静電吸着して保持し、前記処理室内にプラズマを形成して前記ステージに高周波電力を供給して前記ウエハの処理を実施するプラズマ処理方法であって、
前記ウエハの処理が異なる条件で実施される複数の処理ステップとこれら処理ステップ同士の間でプラズマの形成が停止される複数の期間とを有して構成され、
任意の前記ウエハの前記処理の開始前に前記処理室の内壁に皮膜を形成する工程とを備え、
各々の前記プラズマの形成が停止される期間において前記電極に供給される電圧を前記処理室内に浮遊して帯電した粒子の各極性のバランスに応じて変化させるプラズマ処理方法。
- 請求項4に記載のプラズマ処理方法であって、
前記皮膜が少なくとも前記ステージの上方でその上面に対向して配置され前記処理室の天井面を構成する石英製のプレートと、前記ステージの上面の上方であって処理室の内側壁を構成する石英製の円筒部材との表面に形成されるものであって、
前記複数のプラズマが停止されている期間において前記電極に供給される電圧により前記ウエハに形成される電位が時間の経過に伴って低下させるプラズマ処理方法。
- 請求項4または5に記載のプラズマ処理方法であって、
前記複数のプラズマが停止されている期間において前記電極に供給される電圧により前記ウエハに形成される電位が前記ウエハの処理の枚数の増加に伴って低下させるプラズマ処理方法。
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US14/851,996 US9607874B2 (en) | 2014-09-11 | 2015-09-11 | Plasma processing apparatus |
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JP2021064750A (ja) * | 2019-10-17 | 2021-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7390219B2 (ja) | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | エッジリングの保持方法、プラズマ処理装置、及び基板処理システム |
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JP6407694B2 (ja) * | 2014-12-16 | 2018-10-17 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6371354B2 (ja) * | 2016-09-30 | 2018-08-08 | 本田技研工業株式会社 | 被膜形成装置 |
TW201907475A (zh) * | 2017-05-02 | 2019-02-16 | 日商東京威力科創股份有限公司 | 用以降低電漿程序後之表面粒子雜質的製造方法 |
JP7189762B2 (ja) | 2018-12-26 | 2022-12-14 | 株式会社Subaru | スポット溶接ガン及びスポット溶接方法 |
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JP5976377B2 (ja) | 2012-04-25 | 2016-08-23 | 東京エレクトロン株式会社 | 被処理基体に対する微粒子付着の制御方法、及び、処理装置 |
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JP2006269556A (ja) * | 2005-03-22 | 2006-10-05 | Elpida Memory Inc | プラズマ処理装置、及び半導体装置の製造方法 |
Cited By (3)
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JP2021064750A (ja) * | 2019-10-17 | 2021-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7325294B2 (ja) | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7390219B2 (ja) | 2020-03-11 | 2023-12-01 | 東京エレクトロン株式会社 | エッジリングの保持方法、プラズマ処理装置、及び基板処理システム |
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