JP7323525B2 - エッジリング摩耗補償のためのシステムおよび方法 - Google Patents

エッジリング摩耗補償のためのシステムおよび方法 Download PDF

Info

Publication number
JP7323525B2
JP7323525B2 JP2020530558A JP2020530558A JP7323525B2 JP 7323525 B2 JP7323525 B2 JP 7323525B2 JP 2020530558 A JP2020530558 A JP 2020530558A JP 2020530558 A JP2020530558 A JP 2020530558A JP 7323525 B2 JP7323525 B2 JP 7323525B2
Authority
JP
Japan
Prior art keywords
edge ring
corrosion
controller
rates
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020530558A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021506117A5 (enExample
JP2021506117A (ja
Inventor
カンプ・トム・エー．
リール－バードゥゴ・カルロス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2021506117A publication Critical patent/JP2021506117A/ja
Publication of JP2021506117A5 publication Critical patent/JP2021506117A5/ja
Priority to JP2023122092A priority Critical patent/JP7672454B2/ja
Application granted granted Critical
Publication of JP7323525B2 publication Critical patent/JP7323525B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
    • G06F3/0481—Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance
    • G06F3/04817—Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance using icons
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
    • G06F3/0481—Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance
    • G06F3/0482—Interaction with lists of selectable items, e.g. menus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Valve-Gear Or Valve Arrangements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2020530558A 2017-12-05 2018-11-30 エッジリング摩耗補償のためのシステムおよび方法 Active JP7323525B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023122092A JP7672454B2 (ja) 2017-12-05 2023-07-27 エッジリング摩耗補償のためのシステムおよび方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762594861P 2017-12-05 2017-12-05
US62/594,861 2017-12-05
PCT/US2018/063385 WO2019112903A1 (en) 2017-12-05 2018-11-30 System and method for edge ring wear compensation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023122092A Division JP7672454B2 (ja) 2017-12-05 2023-07-27 エッジリング摩耗補償のためのシステムおよび方法

Publications (3)

Publication Number Publication Date
JP2021506117A JP2021506117A (ja) 2021-02-18
JP2021506117A5 JP2021506117A5 (enExample) 2022-01-06
JP7323525B2 true JP7323525B2 (ja) 2023-08-08

Family

ID=66751164

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020530558A Active JP7323525B2 (ja) 2017-12-05 2018-11-30 エッジリング摩耗補償のためのシステムおよび方法
JP2023122092A Active JP7672454B2 (ja) 2017-12-05 2023-07-27 エッジリング摩耗補償のためのシステムおよび方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023122092A Active JP7672454B2 (ja) 2017-12-05 2023-07-27 エッジリング摩耗補償のためのシステムおよび方法

Country Status (6)

Country Link
US (3) US11538713B2 (enExample)
JP (2) JP7323525B2 (enExample)
KR (2) KR20240122603A (enExample)
CN (2) CN120221492A (enExample)
TW (2) TWI863390B (enExample)
WO (1) WO2019112903A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240122603A (ko) * 2017-12-05 2024-08-12 램 리써치 코포레이션 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
US12215966B2 (en) * 2019-12-06 2025-02-04 Applied Materials, Inc. Methods and systems of optical inspection of electronic device manufacturing machines
KR102822822B1 (ko) * 2020-02-25 2025-06-19 에스케이하이닉스 주식회사 에지링 모니터링 장치, 에지링 관리 시스템 및 방법
US11804368B2 (en) * 2020-03-02 2023-10-31 Tokyo Electron Limited Cleaning method and plasma processing apparatus
WO2021194470A1 (en) * 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
TWI861079B (zh) * 2020-03-25 2024-11-11 美商蘭姆研究公司 基板處理系統及其方法
WO2021257331A1 (en) * 2020-06-15 2021-12-23 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of rf signals
KR102585286B1 (ko) * 2020-10-15 2023-10-05 세메스 주식회사 기판 처리 장치 및 소모성 부품의 마모도 측정 방법
KR102762970B1 (ko) 2020-12-23 2025-02-07 삼성전자주식회사 기판 처리 장치 모니터링 방법 및 시스템
KR20240161340A (ko) * 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치
TWI858758B (zh) * 2023-06-06 2024-10-11 郭光哲 微加熱及感測裝置之製造方法及其結構

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230239A (ja) 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP2008042005A (ja) 2006-08-08 2008-02-21 Tokyo Electron Ltd データ収集方法，基板処理装置，基板処理システム
JP2016154224A (ja) 2015-01-28 2016-08-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体製造チャンバ内の消耗部品の余寿命の推定
US20170213758A1 (en) 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69815163T2 (de) 1997-01-24 2004-05-06 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur Abscheidung von Titanschichten
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
JP2002243787A (ja) * 2001-02-19 2002-08-28 Hitachi Engineering & Services Co Ltd 絶縁監視装置
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
JP4707421B2 (ja) * 2005-03-14 2011-06-22 東京エレクトロン株式会社 処理装置，処理装置の消耗部品管理方法，処理システム，処理システムの消耗部品管理方法
US7750488B2 (en) * 2006-07-10 2010-07-06 Tezzaron Semiconductor, Inc. Method for bonding wafers to produce stacked integrated circuits
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
JP2009180722A (ja) 2008-01-30 2009-08-13 Takayoshi Yamamoto 対象設備の最適保全時期決定の支援方法、コンピュータプログラム、及び、対象設備の最適保全時期決定のための支援装置
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP2011210853A (ja) * 2010-03-29 2011-10-20 Tokyo Electron Ltd 消耗量測定方法
US10283331B2 (en) * 2013-09-17 2019-05-07 Applied Materials, Inc. PVD plasma control using a magnet edge lift mechanism
JP6231370B2 (ja) 2013-12-16 2017-11-15 東京エレクトロン株式会社 消耗量測定装置、温度測定装置、消耗量測定方法、温度測定方法及び基板処理システム
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US11605546B2 (en) * 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10014198B2 (en) * 2015-08-21 2018-07-03 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US10985078B2 (en) * 2015-11-06 2021-04-20 Lam Research Corporation Sensor and adjuster for a consumable
US10043636B2 (en) * 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11008655B2 (en) * 2016-03-03 2021-05-18 Lam Research Corporation Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems
US10340171B2 (en) * 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10177018B2 (en) * 2016-08-11 2019-01-08 Applied Materials, Inc. Process kit erosion and service life prediction
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
KR20240122603A (ko) * 2017-12-05 2024-08-12 램 리써치 코포레이션 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법
JP6995008B2 (ja) * 2018-04-27 2022-01-14 東京エレクトロン株式会社 基板処理装置
US10957521B2 (en) * 2018-05-29 2021-03-23 Lam Research Corporation Image based plasma sheath profile detection on plasma processing tools
US11798789B2 (en) * 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
US10903050B2 (en) * 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
US12009236B2 (en) * 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102689653B1 (ko) * 2019-06-26 2024-07-31 삼성전자주식회사 센서 모듈 및 이를 구비하는 식각 장치
WO2021194470A1 (en) * 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
TWI861079B (zh) * 2020-03-25 2024-11-11 美商蘭姆研究公司 基板處理系統及其方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230239A (ja) 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP2008042005A (ja) 2006-08-08 2008-02-21 Tokyo Electron Ltd データ収集方法，基板処理装置，基板処理システム
JP2016154224A (ja) 2015-01-28 2016-08-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体製造チャンバ内の消耗部品の余寿命の推定
US20170213758A1 (en) 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution

Also Published As

Publication number Publication date
US12237203B2 (en) 2025-02-25
KR102693246B1 (ko) 2024-08-07
TW201935593A (zh) 2019-09-01
US20230083737A1 (en) 2023-03-16
TWI863390B (zh) 2024-11-21
CN111466019A (zh) 2020-07-28
WO2019112903A1 (en) 2019-06-13
KR20200086375A (ko) 2020-07-16
US20250191962A1 (en) 2025-06-12
CN120221492A (zh) 2025-06-27
CN111466019B (zh) 2025-03-11
KR20240122603A (ko) 2024-08-12
JP2021506117A (ja) 2021-02-18
US11538713B2 (en) 2022-12-27
US20200373193A1 (en) 2020-11-26
JP7672454B2 (ja) 2025-05-07
TWI810227B (zh) 2023-08-01
TW202405987A (zh) 2024-02-01
JP2023145608A (ja) 2023-10-11

Similar Documents

Publication Publication Date Title
JP7323525B2 (ja) エッジリング摩耗補償のためのシステムおよび方法
JP7454600B2 (ja) 移動可能エッジリングおよびガス注入調節によるウエハ上ｃｄ均一性の制御
JP6976686B2 (ja) エッジリング特性評価を実行するためのシステムおよび方法
US12322617B2 (en) Dual zone heaters for metallic pedestals
JP2020504452A (ja) 処理均一性を改善した基板支持体
US10725485B2 (en) System and method for calculating substrate support temperature
JP7608471B2 (ja) 基板処理システムのための高精度エッジリングのセンタリング
US12020960B2 (en) Determining and controlling substrate temperature during substrate processing
KR20190100972A (ko) TCE들 (thermal control elements) 을 사용한 ESC 온도 추정을 위한 가상 계측 방법
TW202036711A (zh) 用於將對基板體電阻率變動響應之沉積或蝕刻速率變化降低的射頻功率補償
KR20180087145A (ko) 웨이퍼의 다른 cd (critical dimension) 를 예측하기 위해 피드포워드 cd 데이터를 사용하는 가상 계측 시스템들 및 방법들
JP2023519306A (ja) レーザ透過型センサを用いたウエハの厚さおよびギャップのその場モニタリング

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230317

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230627

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230727

R150 Certificate of patent or registration of utility model

Ref document number: 7323525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150