JP7323083B1 - 窒化珪素基板 - Google Patents
窒化珪素基板 Download PDFInfo
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- JP7323083B1 JP7323083B1 JP2023037626A JP2023037626A JP7323083B1 JP 7323083 B1 JP7323083 B1 JP 7323083B1 JP 2023037626 A JP2023037626 A JP 2023037626A JP 2023037626 A JP2023037626 A JP 2023037626A JP 7323083 B1 JP7323083 B1 JP 7323083B1
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- silicon nitride
- nitride substrate
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- silicon
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 145
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000005121 nitriding Methods 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 description 42
- 239000004065 semiconductor Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 238000000034 method Methods 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 23
- 239000000843 powder Substances 0.000 description 23
- 150000002681 magnesium compounds Chemical class 0.000 description 22
- 238000005245 sintering Methods 0.000 description 19
- 229910052761 rare earth metal Inorganic materials 0.000 description 17
- 230000006698 induction Effects 0.000 description 16
- 239000011863 silicon-based powder Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002270 dispersing agent Substances 0.000 description 8
- 239000002612 dispersion medium Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
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- 239000006255 coating slurry Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
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- MKPXGEVFQSIKGE-UHFFFAOYSA-N [Mg].[Si] Chemical compound [Mg].[Si] MKPXGEVFQSIKGE-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
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- 239000011777 magnesium Substances 0.000 description 2
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- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
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- 229910052688 Gadolinium Inorganic materials 0.000 description 1
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- 101001116937 Homo sapiens Protocadherin alpha-4 Proteins 0.000 description 1
- 101001116931 Homo sapiens Protocadherin alpha-6 Proteins 0.000 description 1
- 101001116926 Homo sapiens Protocadherin alpha-7 Proteins 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 102100024261 Protocadherin alpha-4 Human genes 0.000 description 1
- 102100024275 Protocadherin alpha-7 Human genes 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- -1 magnesium nitride Chemical class 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108091008777 probable nuclear hormone receptor HR3 Proteins 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
以下では、3相インバータ回路を例に挙げて説明する。
例えば、インバータ回路INVに使用されるスイッチング素子Q1としては、パワーMOSFETやIGBT(Insulated Gate Bipolar Transistor)を挙げることができる。
図2は、インバータ回路を実現する実装レイアウト例を示す模式図である。
上述しように、窒化珪素基板100上には、半導体装置SA1~半導体装置SA6が搭載される。このとき、半導体装置SA1~半導体装置SA6において熱が発生することから、熱に起因する半導体装置SA1~半導体装置SA6の誤動作や故障を防止する必要がある。したがって、半導体装置SA1~半導体装置SA6が搭載されている窒化珪素基板100には、高い放熱特性が要求される。言い換えれば、窒化珪素基板100は、高い熱伝導率を有していることが要求される。また、窒化珪素基板100には、温度変化に起因して発生する応力に対する耐性も要求される。
まず、窒化珪素基板を製造する関連技術について説明する。
以下では、本実施の形態で採用している窒化珪素基板の製造方法を説明する。
本実施の形態では、珪素粉末に焼結助剤として希土類元素酸化物およびマグネシウム化合物を添加して得られる原料粉末を使用してスラリーを作製する(S201)。
本実施の形態では、工業的に入手可能なグレードの珪素粉末を使用することができる。粉砕前の珪素は、例えば、メジアン径D50が6μm以上、BET比表面積が3m2/g以下、酸素量が1.0質量%以下、および珪素中の不純物炭素量が0.15質量%以下の粉末であることが望ましい。さらには、メジアン径D50が7μm以上、BET比表面積が2.5m2/g以下、酸素量が0.5質量%以下、および珪素中の不純物炭素量が0.10質量%以下の粉末であることがより望ましい。
本実施の形態では、希土類元素酸化物として、入手が容易であり、また、酸化物として安定しているイットリウム(Y)、イッテルビウム(Yb)、ガドリニウム(Gd)、エルビウム(Er)、ルテチウム(Lu)などの酸化物が使用される。具体的に、希土類元素酸化物としては、酸化イットリウム(Y2O3)、酸化イッテルビウム(Yb2O3)、酸化ガドリニウム(Gd2O3)、酸化エルビウム(Er2O3)、酸化ルテチウム(Lu2O3)などを挙げることができる。
マグネシウム化合物としては、「Si」、「N」または「O」を含有するマグネシウム化合物を1種類または2種類以上使用することができる。特に、酸化マグネシウム(MgO)、窒化珪素マグネシウム(MgSiN2)、珪化マグネシウム(Mg2Si)、窒化マグネシウム(Mg3N2)などを使用することが望ましい。
上述のようにして得られたスラリーに対し、例えば、分散媒、有機バインダ、分散剤などを加えて、必要に応じて真空脱泡を行った後、粘度を所定の範囲に調整することにより、塗工用スラリーを作製する。
作製されたシート状の成形体を加熱することにより、成形体に含まれる珪素を窒化した後に緻密化する焼結工程が実施される(S203)。この焼結工程には、成形体中に含まれる有機バインダを除去する脱脂工程と、成形体中に含まれる珪素と窒素とを反応させて窒化珪素を形成する窒化工程(S204)と、窒化工程後に行われる緻密化焼結工程と、が含まれる。すなわち、本実施の形態における窒化珪素基板は、シート状の成形体に含まれる珪素を窒化してなる窒化珪素基板である。窒化珪素基板の厚さは、例えば、0.15mm以上0.8mm以下である。これらの工程は、別々の炉で逐次的に実施してもよいし、同一の炉において連続的に実施してもよい。
上述した窒化珪素基板の製造方法では、窒化珪素粉末ではなく、珪素粉末を使用していることから、窒化処理が必要となる。この点に関し、本発明者は、窒化処理での加熱条件によって、製造された窒化珪素基板の表面に色むらが生じることを新規に見出した。
そこで、本発明者は、窒化珪素基板の表面に発生する色むらを抑制するために、まず、窒化珪素基板の表面に色むらが発生するメカニズムについて鋭意検討した。この結果、本発明者は、以下に示す色むらの発生メカニズムを推定したので、この推定した色むらの発生メカニズムについて説明する。
本実施の形態における基本思想は、窒化処理における急激な昇温を抑制することにより、中央部と縁部の温度差が小さい温度分布を維持しながら成形体を加熱する思想である。つまり、基本思想は、中央部の温度と縁部の温度との間の温度差を充分に緩和するために必要な時間を確保できる程度に、急激な昇温を抑制する思想である。
以下では、この基本思想を具現化した具体的態様について説明する。
<<色むらの定量的評価方法>>
まず、色むらの定量的評価方法について説明する。
「明度L*」は、色調の明暗を示す指数である。「明度L*」は、0≦L*≦100の範囲の値を取り、「明度L*」の値が大きくなると、色調は明るくなり、白味を帯びる。一方、「明度L*」の値が小さくなると、色調は暗くなり、黒味を帯びる。
「クロマティクネス指数a*」は、色調の赤から緑の度合いを示す指数である。「クロマティクネス指数a*」は、-60≦a*≦+60の範囲の値を取る。「クロマティクネス指数a*」の値がプラス方向に大きくなると色調は赤色となる。一方、「クロマティクネス指数a*」の値がマイナス方向に大きくなると色調は緑色となる。そして、「クロマティクネス指数a*」の絶対値が小さくなる程、くすんだ色調となる。
「クロマティクネス指数b*」は、色調の黄から青の度合いを示す指数である。「クロマティクネス指数b*」は、-60≦b*≦+60の範囲の値を取る。「クロマティクネス指数b*」の値がプラス方向に大きくなると色調は黄色となる。一方、「クロマティクネス指数b*」の値がマイナス方向に大きくなると色調は青色となる。そして、「クロマティクネス指数b*」の絶対値が小さくなる程、くすんだ色調となる。
「彩度C*」は、以下に示す数式1に基づいて、「クロマティクネス指数a*」および「クロマティクネス指数b*」に基づいて算出される。
「色差ΔE*ab」とは、基準色との色の差を示す指標であり、「明度L*」、「クロマティクネス指数a*」および「クロマティクネス指数b*」に基づいて算出される。
「位置1」:表面において、対角線が交差する位置
「位置2」:表面において、角部CNR1から「位置1」の方向に15mm内側の位置
「位置3」:表面において、角部CNR2から「位置1」の方向に15mm内側の位置
「位置4」:表面において、角部CNR3から「位置1」の方向に15mm内側の位置
「位置5」:表面において、角部CNR4から「位置1」の方向に15mm内側の位置
以下では、上述した「色空間」の構成パラメータを使用して、サンプル#1~サンプル#4についての色むらの検証を行ったので、この検証結果について説明する。
本実施の形態では、窒化処理における昇温工程のうち、1270℃から1340℃までの範囲において、加熱温度の傾きの平均を3.1℃/h以下となるように工夫が施されている。
100A 成形体
200 セッタ
300 重石
INV インバータ回路
FWD ダイオード
GCC ゲート制御回路
GL グランド配線
LG1 第1レグ
LG2 第2レグ
LG3 第3レグ
MT 3相誘導モータ
NT 負電位端子
PT 正電位端子
Q1 スイッチング素子
RT ロータ
SA 半導体装置
SA1 半導体装置
SA2 半導体装置
SA3 半導体装置
SA4 半導体装置
SA5 半導体装置
SA6 半導体装置
VL 電源配線
WL1 配線
WL2 配線
WL3 配線
Claims (6)
- 珪素が含まれるシート状の成形体を窒化してなる窒化珪素基板であって、
第1面と、前記第1面とは反対側の第2面とを有し、
平面形状は、それぞれの辺が100mm以上の矩形形状であり、
前記第1面と前記第2面のうちの少なくとも一方の面において、中央部と縁部との色差をΔE*abとすると、各角部から中央部の方向に15mm内側の位置である縁部のすべてで0.64≦ΔE*ab≦1.5である、
窒化珪素基板。 - 請求項1に記載の窒化珪素基板において、
0.64≦ΔE*ab≦0.8である、窒化珪素基板。 - 請求項1または2に記載の窒化珪素基板において、
前記中央部と前記縁部のそれぞれの明度は、70以上である、窒化珪素基板。 - 請求項1~3のいずれか1項に記載の窒化珪素基板において、
前記中央部と前記縁部のそれぞれの彩度は、10以上である、窒化珪素基板。 - 請求項1~4のいずれか1項に記載の窒化珪素基板において、
厚さが0.15mm以上0.8mm以下である、窒化珪素基板。 - 請求項1~5のいずれか1項に記載の窒化珪素基板において、
熱伝導率は、110W/(m・K)以上である、窒化珪素基板。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001114565A (ja) | 1999-10-13 | 2001-04-24 | Kyocera Corp | 窒化珪素質焼結体とこれを用いた耐摩耗性部材 |
JP2002029851A (ja) | 2000-07-17 | 2002-01-29 | Denki Kagaku Kogyo Kk | 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体 |
WO2017170247A1 (ja) | 2016-03-28 | 2017-10-05 | 日立金属株式会社 | 窒化ケイ素焼結基板、窒化ケイ素焼結基板片、回路基板および窒化ケイ素焼結基板の製造方法 |
JP2018184333A (ja) | 2017-04-26 | 2018-11-22 | 日立金属株式会社 | 窒化珪素基板の製造方法、及び窒化珪素基板 |
JP7143960B1 (ja) | 2022-02-25 | 2022-09-29 | 日立金属株式会社 | 窒化珪素基板およびその製造方法 |
JP7188633B1 (ja) | 2022-03-11 | 2022-12-13 | 日立金属株式会社 | 窒化珪素基板およびその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1546928A (en) * | 1976-01-06 | 1979-05-31 | Gen Electric | Si3n4 formed by nitridation of sintered silicon compact |
JPS5891147A (ja) * | 1981-11-26 | 1983-05-31 | Nippon Telegr & Teleph Corp <Ntt> | 窒化珪素成形品及びその製法 |
JPH075386B2 (ja) * | 1986-12-16 | 1995-01-25 | 電気化学工業株式会社 | 窒化珪素の焼結助剤及びそれを用いた窒化珪素焼結体の製法 |
JPH09227240A (ja) | 1996-02-19 | 1997-09-02 | Nippon Steel Corp | 窒化ケイ素セラミックス焼結体の製造方法 |
WO1999011583A1 (fr) * | 1997-09-03 | 1999-03-11 | Sumitomo Electric Industries, Ltd. | Produit de frittage en nitrure de silicium a conductibilite thermique elevee et son procede de preparation |
JP2003267786A (ja) | 2002-03-18 | 2003-09-25 | Hitachi Metals Ltd | 窒化珪素系セラミックス焼結体 |
JP2005214659A (ja) | 2004-01-27 | 2005-08-11 | Anden | 異物検出装置および配線基板の製造方法 |
JP2016204209A (ja) | 2015-04-23 | 2016-12-08 | Ntn株式会社 | 窒化ケイ素系セラミックス部材および装飾品 |
JP2016204210A (ja) | 2015-04-23 | 2016-12-08 | Ntn株式会社 | 窒化ケイ素系セラミックス部材および装飾品 |
JP2016204207A (ja) | 2015-04-23 | 2016-12-08 | Ntn株式会社 | 窒化ケイ素系セラミックス部材および装飾品 |
JP2016204206A (ja) | 2015-04-23 | 2016-12-08 | Ntn株式会社 | 窒化ケイ素系セラミックス部材および装飾品 |
KR20230138005A (ko) * | 2021-03-19 | 2023-10-05 | 가부시키가이샤 프로테리아루 | 질화규소 기판 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001114565A (ja) | 1999-10-13 | 2001-04-24 | Kyocera Corp | 窒化珪素質焼結体とこれを用いた耐摩耗性部材 |
JP2002029851A (ja) | 2000-07-17 | 2002-01-29 | Denki Kagaku Kogyo Kk | 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体 |
WO2017170247A1 (ja) | 2016-03-28 | 2017-10-05 | 日立金属株式会社 | 窒化ケイ素焼結基板、窒化ケイ素焼結基板片、回路基板および窒化ケイ素焼結基板の製造方法 |
JP2018184333A (ja) | 2017-04-26 | 2018-11-22 | 日立金属株式会社 | 窒化珪素基板の製造方法、及び窒化珪素基板 |
JP7143960B1 (ja) | 2022-02-25 | 2022-09-29 | 日立金属株式会社 | 窒化珪素基板およびその製造方法 |
JP7188633B1 (ja) | 2022-03-11 | 2022-12-13 | 日立金属株式会社 | 窒化珪素基板およびその製造方法 |
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US20230275002A1 (en) | 2023-08-31 |
KR20230127908A (ko) | 2023-09-01 |
TW202342402A (zh) | 2023-11-01 |
JP2023124875A (ja) | 2023-09-06 |
JP2023165902A (ja) | 2023-11-17 |
JP2023124865A (ja) | 2023-09-06 |
CN116666311A (zh) | 2023-08-29 |
JP2023123942A (ja) | 2023-09-06 |
EP4234514A1 (en) | 2023-08-30 |
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JP7435892B2 (ja) | 2024-02-21 |
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