JP7318530B2 - アルカリ可溶性樹脂、感光性樹脂組成物、感光性シート、硬化膜、層間絶縁膜または半導体保護膜、硬化膜のレリーフパターンの製造方法、電子部品または半導体装置 - Google Patents
アルカリ可溶性樹脂、感光性樹脂組成物、感光性シート、硬化膜、層間絶縁膜または半導体保護膜、硬化膜のレリーフパターンの製造方法、電子部品または半導体装置 Download PDFInfo
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| JPWO2019181782A1 JPWO2019181782A1 (ja) | 2021-02-04 |
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| DE102020125330B4 (de) * | 2019-10-31 | 2025-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Herstellungsverfahren einer lothöckerstruktur |
| US11456266B2 (en) * | 2019-10-31 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bump structure and method of manufacturing bump structure |
| CN115304768A (zh) * | 2022-09-16 | 2022-11-08 | 明士新材料有限公司 | 一种研究生产高品质pspi树脂放大工艺的方法 |
| KR20260000932A (ko) * | 2024-06-26 | 2026-01-05 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 반도체 소자 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010174195A (ja) | 2009-01-30 | 2010-08-12 | Asahi Kasei Corp | ポリイミドポリアミド共重合体及び感光性樹脂組成物 |
| WO2016035593A1 (ja) | 2014-09-02 | 2016-03-10 | 東レ株式会社 | 樹脂および感光性樹脂組成物 |
| WO2018047688A1 (ja) | 2016-09-09 | 2018-03-15 | 東レ株式会社 | 樹脂組成物 |
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| JPS5446203U (https=) | 1977-09-03 | 1979-03-30 | ||
| JPS5953796U (ja) | 1982-09-30 | 1984-04-09 | 株式会社東芝 | 高周波加熱調理装置 |
| JPH03207717A (ja) * | 1990-01-09 | 1991-09-11 | Tomoegawa Paper Co Ltd | ポリアミドイミド樹脂 |
| JP2973330B2 (ja) * | 1990-11-01 | 1999-11-08 | 株式会社巴川製紙所 | 導電性樹脂組成物 |
| JPH0932941A (ja) * | 1995-07-21 | 1997-02-07 | Smc Corp | 切換弁連設体 |
| JP5446203B2 (ja) | 2008-10-15 | 2014-03-19 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
| WO2011001942A1 (ja) * | 2009-06-30 | 2011-01-06 | 日立化成工業株式会社 | 感光性接着剤、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置 |
| JP5953796B2 (ja) | 2012-02-15 | 2016-07-20 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品 |
| JP6309761B2 (ja) * | 2013-12-27 | 2018-04-11 | 東京応化工業株式会社 | ブラックカラムスペーサ用感光性樹脂組成物 |
| WO2016143580A1 (ja) * | 2015-03-06 | 2016-09-15 | 東レ株式会社 | 感光性樹脂組成物および電子部品 |
| CN107407877B (zh) * | 2015-03-24 | 2021-01-01 | 东丽株式会社 | 感光性树脂组合物 |
| KR102666710B1 (ko) | 2015-10-16 | 2024-05-20 | 도레이 카부시키가이샤 | 수지 및 감광성 수지 조성물 |
| JPWO2017073481A1 (ja) * | 2015-10-28 | 2018-08-16 | 東レ株式会社 | ポジ型感光性樹脂組成物、感光性シート、硬化膜、層間絶縁膜、半導体保護膜、半導体装置の製造方法、半導体電子部品および半導体装置 |
| WO2017122623A1 (ja) * | 2016-01-15 | 2017-07-20 | 東レ株式会社 | 硬化膜およびその製造方法 |
| CN108780275B (zh) * | 2016-03-28 | 2022-11-08 | 东丽株式会社 | 感光性膜 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010174195A (ja) | 2009-01-30 | 2010-08-12 | Asahi Kasei Corp | ポリイミドポリアミド共重合体及び感光性樹脂組成物 |
| WO2016035593A1 (ja) | 2014-09-02 | 2016-03-10 | 東レ株式会社 | 樹脂および感光性樹脂組成物 |
| WO2018047688A1 (ja) | 2016-09-09 | 2018-03-15 | 東レ株式会社 | 樹脂組成物 |
Non-Patent Citations (1)
| Title |
|---|
| SHENG-HUEI, Hsiao, et ali.,Preparation of Polyamide-Imides by Direct Polycondensation with Triphenyl Phosphite. V. Aliphatic-Aromatic Polyamide-Imides Based on N,N'-Bis(ω-Carboxyalkyl)benzophenone-3,3',4,4'-Tetracarboxylic Diimides,Journal of Polymer Science: Part A: Polymer Chemistry,1991年,29(3),447-452 |
Also Published As
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| TWI805719B (zh) | 2023-06-21 |
| US20210047470A1 (en) | 2021-02-18 |
| KR102742244B1 (ko) | 2024-12-11 |
| WO2019181782A1 (ja) | 2019-09-26 |
| TW201940551A (zh) | 2019-10-16 |
| CN111936552B (zh) | 2023-05-16 |
| JPWO2019181782A1 (ja) | 2021-02-04 |
| KR20200135318A (ko) | 2020-12-02 |
| CN111936552A (zh) | 2020-11-13 |
| MY204967A (en) | 2024-09-25 |
| US11279802B2 (en) | 2022-03-22 |
| SG11202008583YA (en) | 2020-10-29 |
| PH12020551405A1 (en) | 2021-07-19 |
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