JP7309717B2 - 二次電池の異常検知システム - Google Patents

二次電池の異常検知システム Download PDF

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Publication number
JP7309717B2
JP7309717B2 JP2020533885A JP2020533885A JP7309717B2 JP 7309717 B2 JP7309717 B2 JP 7309717B2 JP 2020533885 A JP2020533885 A JP 2020533885A JP 2020533885 A JP2020533885 A JP 2020533885A JP 7309717 B2 JP7309717 B2 JP 7309717B2
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Prior art keywords
oxide
insulator
transistor
conductor
potential
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Japanese (ja)
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JPWO2020026079A5 (enExample
JPWO2020026079A1 (enExample
Inventor
隆之 池田
亮太 田島
佑樹 岡本
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2023110661A priority Critical patent/JP7661410B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K21/00—Details of pulse counters or frequency dividers
    • H03K21/08—Output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Secondary Cells (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Protection Of Static Devices (AREA)
JP2020533885A 2018-08-03 2019-07-24 二次電池の異常検知システム Active JP7309717B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023110661A JP7661410B2 (ja) 2018-08-03 2023-07-05 異常検知システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018146472 2018-08-03
JP2018146472 2018-08-03
PCT/IB2019/056305 WO2020026079A1 (ja) 2018-08-03 2019-07-24 二次電池の異常検知システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023110661A Division JP7661410B2 (ja) 2018-08-03 2023-07-05 異常検知システム

Publications (3)

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JPWO2020026079A1 JPWO2020026079A1 (enExample) 2020-02-06
JPWO2020026079A5 JPWO2020026079A5 (enExample) 2022-07-13
JP7309717B2 true JP7309717B2 (ja) 2023-07-18

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JP2020533885A Active JP7309717B2 (ja) 2018-08-03 2019-07-24 二次電池の異常検知システム
JP2023110661A Active JP7661410B2 (ja) 2018-08-03 2023-07-05 異常検知システム

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US (1) US11867503B2 (enExample)
JP (2) JP7309717B2 (enExample)
WO (1) WO2020026079A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7330986B2 (ja) 2018-08-31 2023-08-22 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の動作方法
US12451714B2 (en) 2018-10-25 2025-10-21 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for operating power storage device
US12444779B2 (en) 2018-11-26 2025-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device sensor unit
CN113169546A (zh) 2018-12-19 2021-07-23 株式会社半导体能源研究所 二次电池的过放电防止电路及二次电池模块
JP7463298B2 (ja) 2019-01-24 2024-04-08 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の動作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251901A (ja) 2003-02-06 2004-09-09 Ego Elektro Geraete Blanc & Fischer 誘導的に動作するセンサの回路配置と該回路配置の操作方法
JP2016200539A (ja) 2015-04-13 2016-12-01 株式会社古河テクノマテリアル センサ、リチウムイオン電池の異常検知方法
US20170141360A1 (en) 2014-03-19 2017-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Flexible structure with strain gauge, application to electrochemical lithium-ion batteries in a flexible packaging

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JP4486223B2 (ja) 2000-06-16 2010-06-23 三菱重工業株式会社 非水電解質二次電池の安全弁の形成方法及び非水電解質二次電池
JP2002117911A (ja) 2000-10-06 2002-04-19 Nec Mobile Energy Kk 電池搭載機器
JP2002289265A (ja) 2001-03-23 2002-10-04 Mitsubishi Heavy Ind Ltd リチウム二次電池の監視装置
JP5225559B2 (ja) * 2006-06-06 2013-07-03 パナソニック株式会社 電池パックの異常判定方法および電池パック
JP2010011619A (ja) * 2008-06-26 2010-01-14 Panasonic Corp 電池の充電制御方法および充電制御装置
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012154860A (ja) 2011-01-27 2012-08-16 Denso Corp 車載電気機器の破損検知装置
JP6582571B2 (ja) * 2015-06-09 2019-10-02 オムロン株式会社 センサノード
WO2017154112A1 (ja) * 2016-03-08 2017-09-14 株式会社東芝 電池監視装置及び方法
JP6038377B1 (ja) * 2016-07-11 2016-12-07 ミツミ電機株式会社 二次電池保護回路
JP6434571B1 (ja) * 2017-06-23 2018-12-05 ファナック株式会社 消費電流の異常を検知する異常検知部を備えるアブソリュートエンコーダ
KR101922992B1 (ko) * 2017-08-02 2018-11-29 서울대학교산학협력단 보조전극 센서를 포함하는 이차전지 및 이차전지의 이상 검출 방법
JP7134981B2 (ja) * 2017-09-14 2022-09-12 株式会社半導体エネルギー研究所 二次電池の異常検知システム及び二次電池の異常検出方法
JP7399857B2 (ja) * 2018-07-10 2023-12-18 株式会社半導体エネルギー研究所 二次電池の保護回路
JP7361762B2 (ja) * 2019-03-26 2023-10-16 株式会社半導体エネルギー研究所 電池パック

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251901A (ja) 2003-02-06 2004-09-09 Ego Elektro Geraete Blanc & Fischer 誘導的に動作するセンサの回路配置と該回路配置の操作方法
US20170141360A1 (en) 2014-03-19 2017-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Flexible structure with strain gauge, application to electrochemical lithium-ion batteries in a flexible packaging
JP2016200539A (ja) 2015-04-13 2016-12-01 株式会社古河テクノマテリアル センサ、リチウムイオン電池の異常検知方法

Also Published As

Publication number Publication date
WO2020026079A1 (ja) 2020-02-06
JP2023133301A (ja) 2023-09-22
JP7661410B2 (ja) 2025-04-14
US11867503B2 (en) 2024-01-09
JPWO2020026079A1 (enExample) 2020-02-06
US20210190471A1 (en) 2021-06-24

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