JP7298997B2 - 能動放電回路を備えた電気回路装置 - Google Patents
能動放電回路を備えた電気回路装置 Download PDFInfo
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Description
2 RCスナバ素子の下部側コネクタ
3 スイッチング素子の制御コネクタ
4 半導体基板
5 誘電体層又は層列
6 導電性充填剤
7 オーミック層
8 メタライゼーション層
R RCスナバ素子の抵抗器
C RCスナバ素子のキャパシタ
S 電気スイッチング素子
Claims (9)
- 少なくとも1つの電気スイッチング素子(S)を含む能動放電回路を備え、前記少なくとも1つの電気スイッチング素子(S)を介して制御された態様で放電可能な電気回路装置であって、
回路装置内の電圧ピーク又は電流ピークを減衰させるためのキャパシタ(C)及び抵抗器(R)を有するRCスナバ素子を含み、
前記少なくとも1つの電気スイッチング素子(S)は、前記RCスナバ素子に組み込まれ、前記RCスナバ素子の前記キャパシタ(C)と並列に接続され、
前記RCスナバ素子の前記キャパシタ(C)及び前記抵抗器(R)は、前記少なくとも1つの電気スイッチング素子(S)と共に半導体基板(4)にモノリシックに集積化されている、電気回路装置。 - 前記半導体基板(4)の表面側に、電気的絶縁誘電体層又は層列(5)で被覆され導電性物質(6)で充填された凹部を配列して前記RCスナバ素子を形成し、
前記半導体基板(4)は、少なくとも前記凹部の領域において、表面側と裏面側との間をドーピングすることにより導電性を有し、表面側及び裏面側のそれぞれにコンタクトメタライゼーション(8)が施されている
ことを特徴とする請求項1に記載の電気回路装置。 - 電気スイッチング素子(S)のいくつかは、前記半導体基板(4)における前記凹部の間、及び/又は、前記凹部の配列の周囲に分布している
ことを特徴とする請求項2に記載の電気回路装置。 - 前記少なくとも1つの電気スイッチング素子(S)は、前記回路装置を放電するための前記RCスナバ素子のキャパシタをブリッジするように設計され、且つ接続されている
ことを特徴とする請求項1~請求項3のいずれか一項に記載の電気回路装置。 - 前記少なくとも1つの電気スイッチング素子(S)は、MOSFET、JFET、バイポーラトランジスタ、又はサイリスタとして実現される
ことを特徴とする請求項1~請求項4のいずれか一項に記載の電気回路装置。 - 前記少なくとも1つの電気スイッチング素子(S)は、電気的又は光学的な制御信号により作動され前記回路装置を放電するように設計されている
ことを特徴とする請求項1~請求項5のいずれか一項に記載の電気回路装置。 - 前記少なくとも1つの電気スイッチング素子(S)は、閾値温度を超えた温度上昇が前記少なくとも1つの電気スイッチング素子(S)の放電電流の低下により制限される電力制限スイッチング素子として設計される
ことを特徴とする請求項1~請求項6のいずれか一項に記載の電気回路装置。 - 前記回路装置は、中間回路として設計されている
ことを特徴とする請求項1~請求項7のいずれか一項に記載の電気回路装置。 - 表面側に凹部の配列が設けられた半導体基板(4)に形成され、前記凹部を有する表面側が電気的絶縁誘電体層又は層列(5)で被覆され、前記凹部が導電性物質(6)で充填され、前記半導体基板(4)が、ドーピングされた少なくとも前記凹部の領域において表面側と裏面側との間で導電性にされ、前記表面側と前記裏面側のそれぞれにコンタクトメタライゼーション(8)が施された、請求項1~請求項8のいずれか一項に記載の電気回路装置のための電気コンポーネントであって、
複数の電気スイッチング素子(S)が、作動することによって前記電気的絶縁誘電体層又は層列(5)をブリッジするように、前記半導体基板(4)における前記凹部の間、及び/又は、前記凹部の配列の周囲に分布している、電気コンポーネント。
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Application Number | Priority Date | Filing Date | Title |
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DE102017211030.9 | 2017-06-29 | ||
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DE112018007125T5 (de) * | 2018-02-20 | 2020-11-05 | Mitsubishi Electric Corporation | Leistungshalbleitermodul und leistungswandler mit demselben |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124327A (ja) | 2001-10-11 | 2003-04-25 | Murata Mfg Co Ltd | キャパシタ素子を有する半導体装置、およびその検査方法 |
US20100163950A1 (en) | 2008-06-30 | 2010-07-01 | Jon Gladish | Power Device with Monolithically Integrated RC Snubber |
JP2010232655A (ja) | 2009-03-26 | 2010-10-14 | Semikron Elektronik Gmbh & Co Kg | 複数の集積半導体構成素子の製造方法 |
US20120127762A1 (en) | 2010-11-19 | 2012-05-24 | Lineage Power Corporation | Llc converter active snubber circuit and method of operation thereof |
JP2012204615A (ja) | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置 |
JP2015115338A (ja) | 2013-12-09 | 2015-06-22 | セイコーエプソン株式会社 | 静電気保護回路及び半導体集積回路装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074679A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 半導体素子の保護回路 |
ATE508512T1 (de) * | 2003-02-11 | 2011-05-15 | Det Int Holding Ltd | Aktiv-snubber |
US7592718B1 (en) * | 2004-08-02 | 2009-09-22 | Semiconductor Components Industries, L.L.C. | Boosted switch drive with charge transfer |
US7274112B2 (en) * | 2004-08-31 | 2007-09-25 | American Power Conversion Corporation | Method and apparatus for providing uninterruptible power |
DE102006017487A1 (de) | 2006-04-13 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Integriertes Beschaltungsbauelement auf Halbleiterbasis zur Schaltentlastung, Spannungsbegrenzung bzw. Schwingungsdämpfung |
JP5577607B2 (ja) * | 2009-03-05 | 2014-08-27 | 日産自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI424550B (zh) * | 2010-12-30 | 2014-01-21 | Ind Tech Res Inst | 功率元件封裝結構 |
US9230957B2 (en) * | 2013-03-11 | 2016-01-05 | Alpha And Omega Semiconductor Incorporated | Integrated snubber in a single poly MOSFET |
DE102014200869B4 (de) * | 2013-11-22 | 2018-09-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Integrierter Kondensator und Verfahren zum Herstellen desselben und dessen Verwendung |
US9813008B2 (en) * | 2016-04-06 | 2017-11-07 | Lcdrives Corp | Half-bridge switching circuit system |
US10593664B2 (en) * | 2016-12-27 | 2020-03-17 | Infineon Technologies Americas Corp. | Controlled resistance integrated snubber for power switching device |
DE102017211030B4 (de) * | 2017-06-29 | 2020-07-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrische Schaltungsanordnung mit einer aktiven Entladeschaltung |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124327A (ja) | 2001-10-11 | 2003-04-25 | Murata Mfg Co Ltd | キャパシタ素子を有する半導体装置、およびその検査方法 |
US20100163950A1 (en) | 2008-06-30 | 2010-07-01 | Jon Gladish | Power Device with Monolithically Integrated RC Snubber |
JP2010232655A (ja) | 2009-03-26 | 2010-10-14 | Semikron Elektronik Gmbh & Co Kg | 複数の集積半導体構成素子の製造方法 |
US20120127762A1 (en) | 2010-11-19 | 2012-05-24 | Lineage Power Corporation | Llc converter active snubber circuit and method of operation thereof |
JP2012204615A (ja) | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置 |
JP2015115338A (ja) | 2013-12-09 | 2015-06-22 | セイコーエプソン株式会社 | 静電気保護回路及び半導体集積回路装置 |
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US10530361B2 (en) | 2020-01-07 |
US20190007041A1 (en) | 2019-01-03 |
DE102017211030B4 (de) | 2020-07-30 |
EP3422576A1 (de) | 2019-01-02 |
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JP2019012830A (ja) | 2019-01-24 |
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