JP7297065B2 - イメージセンサ - Google Patents

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Publication number
JP7297065B2
JP7297065B2 JP2021529926A JP2021529926A JP7297065B2 JP 7297065 B2 JP7297065 B2 JP 7297065B2 JP 2021529926 A JP2021529926 A JP 2021529926A JP 2021529926 A JP2021529926 A JP 2021529926A JP 7297065 B2 JP7297065 B2 JP 7297065B2
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Japan
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ligand
group
semiconductor
semiconductor quantum
film
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Japanese (ja)
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JPWO2021002131A1 (https=
Inventor
雅司 小野
真宏 高田
哲志 宮田
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Fujifilm Corp
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Fujifilm Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/21—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
JP2021529926A 2019-07-01 2020-06-01 イメージセンサ Active JP7297065B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019123104 2019-07-01
JP2019123104 2019-07-01
PCT/JP2020/021607 WO2021002131A1 (ja) 2019-07-01 2020-06-01 半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021002131A1 JPWO2021002131A1 (https=) 2021-01-07
JP7297065B2 true JP7297065B2 (ja) 2023-06-23

Family

ID=74100563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529926A Active JP7297065B2 (ja) 2019-07-01 2020-06-01 イメージセンサ

Country Status (4)

Country Link
US (1) US20220102420A1 (https=)
JP (1) JP7297065B2 (https=)
TW (1) TW202118075A (https=)
WO (1) WO2021002131A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022134039A1 (zh) * 2020-12-25 2022-06-30 京东方科技集团股份有限公司 量子点材料、发光器件及其制作方法、显示装置
JPWO2023157742A1 (https=) * 2022-02-18 2023-08-24

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US20150183943A1 (en) 2012-06-20 2015-07-02 Nanyang Technological University Composite material
US20180145204A1 (en) 2015-06-04 2018-05-24 Nokia Technologies Oy Device for direct x-ray detection
US20180151817A1 (en) 2016-11-25 2018-05-31 Samsung Electronics Co., Ltd. Light emitting device and display device including quantum dot

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US20100283034A1 (en) * 2006-10-20 2010-11-11 Lianhua Qu Concentration - gradient alloyed semiconductor quantum dots, LED and white light applications
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JP2014093327A (ja) 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
US20180145204A1 (en) 2015-06-04 2018-05-24 Nokia Technologies Oy Device for direct x-ray detection
US20180151817A1 (en) 2016-11-25 2018-05-31 Samsung Electronics Co., Ltd. Light emitting device and display device including quantum dot

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Also Published As

Publication number Publication date
JPWO2021002131A1 (https=) 2021-01-07
TW202118075A (zh) 2021-05-01
WO2021002131A1 (ja) 2021-01-07
US20220102420A1 (en) 2022-03-31

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