JP7293026B2 - π共役系ポリマーの製造方法 - Google Patents
π共役系ポリマーの製造方法 Download PDFInfo
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- JP7293026B2 JP7293026B2 JP2019139897A JP2019139897A JP7293026B2 JP 7293026 B2 JP7293026 B2 JP 7293026B2 JP 2019139897 A JP2019139897 A JP 2019139897A JP 2019139897 A JP2019139897 A JP 2019139897A JP 7293026 B2 JP7293026 B2 JP 7293026B2
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- 239000002346 layers by function Substances 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
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- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- HWYHZTIRURJOHG-UHFFFAOYSA-N luminol Chemical compound O=C1NNC(=O)C2=C1C(N)=CC=C2 HWYHZTIRURJOHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
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- 229940095102 methyl benzoate Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical group CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000005034 trifluormethylthio group Chemical group FC(S*)(F)F 0.000 description 1
- 125000004044 trifluoroacetyl group Chemical group FC(C(=O)*)(F)F 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
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- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
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Description
工程(I)において、該溶媒中の過酸化物の含有量は、高速液体クロマトグラフィーで測定される相対面積比で0.1%以下であり、
該π共役系ポリマーの電子スピン濃度は、30×1016Spin/g以下、及び/又はπ共役系粗ポリマーの電子スピン濃度の2.5倍以下である、方法。
[2]前記π共役系粗ポリマーはD-A型π共役系粗ポリマーであり、前記π共役系ポリマーはD-A型π共役系ポリマーである、[1]に記載の方法。
[3]工程(I)において、前記溶媒は、ベンジル水素含有芳香族系溶媒、ハロゲン原子含有芳香族系溶媒、及びエーテル系溶媒からなる群から選択される少なくとも1つ以上を含む、[1]又は[2]に記載の方法。
[4]工程(I)において、温度40℃以上で加熱溶解させる、[1]~[3]のいずれかに記載の方法。
[5]陽極及び陰極を含む一対の電極、並びに該一対の電極間に設けられ、[1]~[4]のいずれかに記載の方法により製造されるπ共役系ポリマーを含む活性層を備える、有機光電変換素子の製造方法。
本発明の製造方法は、π共役系粗ポリマーを溶媒に加熱溶解させてポリマー溶液を得る工程(I)、及び、該ポリマー溶液からπ共役系ポリマーを析出させる工程(II)を含む。
工程(I)は、π共役系粗ポリマーを溶媒に加熱溶解させてポリマー溶液を得る工程であり、該溶媒中の過酸化物の含有量(過酸化物量ということがある)が、高速液体クロマトグラフィーで測定される相対面積比で0.1%以下であることを特徴とする。
π共役系粗ポリマーは、π共役系を含む高分子化合物を示す。本明細書では、工程(I)に供する前(精製前)のπ共役系ポリマーをπ共役系粗ポリマーと称するが、π共役系粗ポリマーとπ共役系ポリマーの構造は同じである。また、本明細書において、「暗電流が改善される」とは暗電流が低減されることを示し、「外部量子効率が改善される」とは外部量子効率が向上することを示す。さらに、本明細書において、暗電流及び外部量子効率を含めて電気的特性という場合があり、電気的特性が向上するとは暗電流及び外部量子効率が改善されること等を意味する。
以下、本実施形態にかかるπ共役系粗ポリマーについてより具体的に説明するにあたり、共通して用いられる用語について説明する。
)、C1~C12アルキルフェニルチオ基、1-ナフチルチオ基、2-ナフチルチオ基、及びペンタフルオロフェニルチオ基が挙げられる。
アミド基の具体例としては、ホルムアミド基、アセトアミド基、プロピオアミド基、ブチロアミド基、ベンズアミド基、トリフルオロアセトアミド基、ペンタフルオロベンズアミド基、ジホルムアミド基、ジアセトアミド基、ジプロピオアミド基、ジブチロアミド基、ジベンズアミド基、ジトリフルオロアセトアミド基、及びジペンタフルオロベンズアミド基が挙げられる。
ここで、R’は、アルキル基、アリール基、アリールアルキル基、又は1価の複素環基を表す。
工程(I)において、D-A型π共役系粗ポリマーは、例えば芳香族系溶媒などの有機溶媒への溶解性が低い場合が多く、工程(I)において所定温度以上に加熱溶解させる必要性が高いことから、溶媒中の過酸化物が分解することでオキシルラジカルを発生しやすい。そのため、工程前後の電子スピン濃度の変化率が大きい傾向にあり、結果として、有機光電変換素子の暗電流の上昇及び外部変換効率の低下が生じやすい。しかし、本発明の製造方法を使用すれば、電子スピン濃度及びその変化率が制御されるため、D-A型π共役系粗ポリマーを原料として用いる場合であっても、有機光電変換素子の暗電流の上昇及び外部量子効率の低下を有効に抑制することができる。なお、この場合、得られるπ共役系ポリマーは当然D-A型π共役系ポリマーである。
π共役系粗ポリマーを溶解させるための溶媒としては、該ポリマーが溶解し得る溶媒であれば、特に限定されず、例えば、芳香族系溶媒、エーテル系溶媒、アルコール系溶媒、エステル系溶媒、ケトン系溶媒、脂肪族炭化水素溶媒、脂環式炭化水素溶媒、ニトリル系溶媒、アミド系溶媒、カーボネート系溶媒、硫黄含有溶媒、塩素含有溶媒などが挙げられる。これらの溶媒は単独又は二種以上組み合わせて使用できる。これらの中でも、溶解性の観点から、ベンジル水素含有芳香族系溶媒、ハロゲン原子含有芳香族系溶媒、及びエーテル系溶媒からなる群から選択される少なくとも1つ以上を含む溶媒を使用することが好ましく、溶解性及び有機光電変換素子の電気的特性の低下を有効に抑制しやすい観点から、ベンジル水素含有芳香族系溶媒及びエーテル系溶媒からなる群から選択される少なくとも1つ以上を含む溶媒を使用することがより好ましい。ベンジル水素含有芳香族系溶媒、及びエーテル系溶媒は、空気中の酸素等により酸化されやすく、過酸化物を発生しやすいため、過酸化物量が多くなる傾向がある。そのため、加熱溶解により多量のオキシルラジカルを発生しやすい傾向があり、結果として、有機光電変換素子の電気的特性が顕著に低下しやすい。本発明の製造方法では、このような溶媒を用いる場合でも、該溶媒中の過酸化物量が調整されているため、有機光電変換素子の電気的特性の低下を有効に抑制することができる。したがって、本発明の製造方法は、π共役系ポリマーを溶解させるための溶媒としてベンジル水素含有芳香族系溶媒及びエーテル系溶媒からなる群から選択される少なくとも1つ以上を用いる場合にさらに効果的である。
π共役系粗ポリマーを溶媒に加熱溶解させてポリマー溶液を得る方法としては、例えば、加熱条件下、π共役系粗ポリマーと溶媒とを混合、好ましくは撹拌混合する方法が挙げられる。加熱温度は、π共役系粗ポリマーの溶解性に応じて適宜選択できるが、好ましくは40℃以上、より好ましくは50℃以上、さらに好ましくは60℃以上であり、好ましくは200℃以下、より好ましくは150℃以下、さらに好ましくは100℃以下である。加熱温度が上記の下限以上であると、π共役系粗ポリマーが溶解しやすく、純度が高いポリマーが得られる傾向にあるため、有機光電変換素子の電気的特性が良好となりやすい。また、加熱温度が上記の上限以下であると、π共役系ポリマーの分解を抑制しやすいため、有機光電変換素子の電気的特性が良好となりやすい。なお、加熱溶解は、冷却装置等により還流しながら行ってもよい。
加熱時間は、π共役系粗ポリマーの溶解性及び加熱温度に応じて適宜選択できるが、好ましくは10分以上、より好ましくは30分以上、さらに好ましくは1時間以上であり、好ましくは24時間以下、より好ましくは12時間以下である。
工程(I)は、溶媒がさらに酸化され過酸化物が発生するのを防止するために、不活性ガス(例えば窒素、アルゴン等)雰囲気下で行うことが好ましい。
工程(II)は、工程(I)で得られたポリマー溶液からπ共役系ポリマーを析出させる工程である。析出させる方法としては、特に限定されないが、例えばπ共役系ポリマーに対する貧溶媒にポリマー溶液を加える方法などが挙げられる。ポリマー溶液を加える際のポリマー溶液の温度及び貧溶媒の温度は特に限定されず、例えば10~50℃、好ましくは20~30℃であってよい。ポリマー溶液は貧溶媒中に一括添加してもよく、徐々に添加してもよい。
本発明の製造方法により得られるπ共役系ポリマーは、電子スピン濃度が30×1016Spin/g以下、及び/又は、π共役系粗ポリマーの電子スピン濃度の2.5倍以下であり、好ましくはπ共役系ポリマーは、電子スピン濃度が30×1016Spin/g、及びπ共役系粗ポリマーの電子スピン濃度の2.5倍以下である。そのため、加熱を伴う精製過程を経由してπ共役系ポリマーを製造しても、該π共役系ポリマーを用いる有機光電変換素子における暗電流の上昇及びEQEの低下を有効に抑制できる。
なお、π共役系ポリマー及びπ共役系粗ポリマーの電スピン濃度は、例えば実施例に記載の方法により測定できる。
本発明は、陽極及び陰極を含む一対の電極、並びに該一対の電極間に設けられ、本発明の上記製造方法により製造されるπ共役系ポリマーを含む活性層を備える、有機光電変換素子の製造方法を包含する。
本発明の一実施態様において、有機光電変換素子は、基板/陽極/正孔輸送層/活性層/電子輸送層/陰極の順に積層された層構成;又は基板/陰極/電子輸送層/活性層/正孔輸送層/陽極の順に積層された層構成を有する。なお、各層を必ず配置することを必須としているのではなく、例えば正孔輸送層を有していなくてもよい。また、各層は別々に設けることを必須としているのではなく、例えば一層で陽極と正孔輸送層との両方の機能を有していてもよい。
前記活性層は、p型半導体材料(電子供与性化合物)とn型半導体材料(電子受容性化合物)とを含む。p型半導体材料及びn型半導体材料のうちのいずれであるかは、選択された有機半導体材料のHOMO又はLUMOのエネルギーレベルから相対的に決定することができる。
インク組成物を塗布対象に塗布する方法としては、任意好適な塗布法を用いることができる。塗布法としては、スリットコート法、ナイフコート法、スピンコート法、マイクログラビアコート法、グラビアコート法、バーコート法、インクジェット印刷法、ノズルコート法、又はキャピラリーコート法が好ましく、スリットコート法、スピンコート法、キャピラリーコート法、ナイフコート法又はバーコート法がより好ましく、ナイフコート法、スリットコート法、又はスピンコート法がさらに好ましい。
インク組成物の塗布膜から、溶媒を除去する方法、すなわち塗布膜を乾燥処理して溶媒を除去し、硬化させる方法としては、任意好適な方法を用いることができる。溶媒を除去する方法の例としては、ホットプレートを用いて直接的に加熱する方法、熱風乾燥法、赤外線加熱乾燥法、フラッシュランプアニール乾燥法、減圧乾燥法などによる乾燥処理が挙げられる。
上記工程(X)に用いられ得るインク組成物は、溶液であってもよく、分散液、エマルション(乳濁液)、サスペンション(懸濁液)等の分散液であってもよい。本発明の一実施態様におけるインク組成物は、活性層形成用のインク組成物であって、p型半導体材料であるπ共役系ポリマー及びn型半導体材料と、第1溶媒とを含み、さらに所望により第2溶媒を含み得る。
n型半導体材料(電子受容性化合物)は、低分子化合物であっても高分子化合物であってもよい。
溶媒は、選択されたp型半導体材料及びn型半導体材料に対する溶解性、活性層を形成する際の乾燥条件に対応するための特性(沸点など)を考慮して選択すればよい。
主溶媒である第1溶媒は、置換基(例えば、アルキル基、ハロゲン原子)を有していてもよい芳香族炭化水素(以下、単に芳香族炭化水素という)である。第1溶媒は、選択されたp型半導体材料及びn型半導体材料の溶解性を考慮して選択することが好ましい。
第2溶媒は、特にn型半導体材料の溶解性を高める観点から選択される溶媒であることが好ましい。第2溶媒としては、例えば、アセトン、メチルエチルケトン、シクロヘキサノン、アセトフェノン、プロピオフェノン等のケトン系溶媒、酢酸エチル、酢酸ブチル、酢酸フェニル、エチルセルソルブアセテート、安息香酸メチル、安息香酸ブチル、安息香酸ベンジル等のエステル系溶媒が挙げられる。
第1溶媒及び第2溶媒の組み合わせとしては、例えば、下記表1に示される組み合わせが挙げられる。
インク組成物に含まれる第1溶媒及び第2溶媒の総質量は、インク組成物の全質量を100質量%としたときに、p型半導体材料及びn型半導体材料の溶解性をより向上させる観点から、好ましくは90質量%以上、より好ましくは92質量%以上、さらに好ましくは95質量%以上であり、インク組成物中のp型半導体材料及びn型半導体材料の含有量をより多くしつつ一定の厚さ以上の膜を形成し易くする観点から、好ましくは99質量%以下、より好ましくは98質量%以下、さらに好ましくは97.5質量%以下である。
インク組成物は、第1溶媒及び第2溶媒以外の任意の溶媒を含んでいてもよい。インク組成物に含まれる全溶媒の合計質量を100質量%としたときに、任意の溶媒の含有率は、好ましくは5質量%以下であり、より好ましくは3質量%以下であり、さらに好ましくは1質量%以下である。任意の溶媒としては、第2溶媒より沸点が高い溶媒が好ましい。
インク組成物には、第1溶媒、第2溶媒、p型半導体材料(π共役系ポリマー)、及びn型半導体材料の他に、本発明の目的及び効果を損なわない限度において、紫外線吸収剤、酸化防止剤、吸収した光により電荷を発生させる機能を増感するための増感剤、紫外線に対する安定性を増加させるための光安定剤といった任意の成分が含まれていてもよい。
インク組成物における、p型半導体材料及びn型半導体材料の合計の濃度は、0.01質量%~20質量%であることが好ましく、0.01質量%~10質量%であることがより好ましく、0.01質量%~5質量%であることがさらに好ましく、0.1質量%~5質量%であることが特に好ましい。インク組成物中、p型半導体材料及びn型半導体材料は溶解していても分散していてもよい。p型半導体材料及びn型半導体材料は、好ましくは少なくとも一部が溶解しており、より好ましくは全部が溶解している。
インク組成物は、公知の方法により調製することができる。例えば、第1溶媒及び第2溶媒を混合して混合溶媒を調製し、混合溶媒にp型半導体材料及びn型半導体材料を添加する方法、第1溶媒にp型半導体材料を添加し、第2溶媒にn型半導体材料を添加してから、各材料が添加された第1溶媒及び第2溶媒を混合する方法などにより、調製することができる。
フィルターとしては、例えば、ポリテトラフルオロエチレン(PTFE)等のフッ素樹脂で形成されたフィルターを用いることができる。
有機光電変換素子は、通常、基板に形成される。この基板には、通常、陰極及び陽極を含む電極が形成される。基板の材料は、特に有機化合物を含む層を形成する際に化学的に変化しない材料であれば特に限定されない。基板の材料としては、例えば、ガラス、プラスチック、高分子フィルム、シリコンが挙げられる。基板としては、後述する電極が形成されているか、又はパターニングすることにより電極として機能し得る導電性材料の層が設けられた基板を用意して用いることができる。導電性材料の層が設けられた基板の例としては、インジウムスズオキサイド(ITO)の層が形成されたガラス基板が挙げられる。
透明又は半透明の電極の材料としては、例えば、導電性の金属酸化物膜、半透明の金属薄膜等が挙げられる。具体的には、酸化インジウム、酸化亜鉛、酸化スズ、及びそれらの複合体であるITO、インジウム亜鉛オキサイド(IZO)、NESA等の導電性材料、金、白金、銀、銅が挙げられる。透明又は半透明の電極の材料としては、ITO、IZO、酸化スズが好ましい。また、電極として、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体等の有機化合物が材料として用いられる透明導電膜を用いてもよい。透明又は半透明の電極は、陽極であっても陰極であってもよい。基板が不透明である場合には、不透明な基板側に設けられる電極とは反対側の電極(すなわち、基板から遠い側の電極)が透明又は半透明の電極とされることが好ましい。
有機光電変換素子は、有機光電変換効率といった特性を向上させるためのさらなる構成要素として、電荷輸送層(例えば電子輸送層、正孔輸送層、電子注入層、正孔注入層等)といった付加的な中間層を備えていてもよい。
有機光電変換素子は、封止層をさらに備えていてもよい。封止層は、例えば、基板から遠い方の電極側に設けたり、有機光電変換素子の周辺部に設けたりすることができる。封止層は、水分を遮断する性質(水蒸気バリア性)又は酸素を遮断する性質(酸素バリア性)を有する材料を用いて、選択された材料に好適な方法により形成することができる。
本発明の方法により製造される有機光電変換素子は、本発明におけるπ共役系ポリマーを含む活性層を備えるため、π共役系ポリマーが加熱溶解を伴う精製工程を経由して製造されていても、暗電流の上昇及びEQEの低下が有効に抑制される。そのため、暗電流が低く、かつ高いEQEを示すことができる。したがって、本発明の方法により製造される有機光電変換素子は、有機フォトダイオード、太陽電池などに利用することができる。特に本発明における有機光電変換素子は、有機フォトダイオード用有機光電変換素子として有用である。
実施例及び比較例において、溶媒中の過酸化物の含有量は、紫外線検出器を備えた、液体クロマトグラフィーにより求めた。
<分析条件>
測定装置:島津LC-20A
カラム:L-Column2 ODS(一般財団法人化学物質評価研究機構製)
カラム温度:40℃
移動相:水、アセトニトリル
流量:1.0mL/min
検出波長:230nm、化学発光検出器
<検量線の作成>
JEOL社製X-band ESR装置を用いてスピン濃度分析を実施した。スピン量とESRシグナル面積値の相関を示す検量線の作成は、標準物質としてTEMPO(2,2,6,6―tetramethylpiperidine―1―oxyl)を用いて実施した。スピン濃度分析はTEMPOを1.02mg量り取り、10mLのトルエンに溶解させ、0.65mMのTEMPO溶液を作成した(標準1)。得られた溶液を1mL量り取り、10mLのメスフラスコで定容させ0.065mMの溶液を作成した(標準2)。同様の操作で、0.0065mM(標準3)および0.00065mM(標準4)の溶液を作成した。得られた標準液1~4のESR測定を実施し、それぞれ得られたスペクトルの面積値を求めた。得られた数値から検量線を作成した。
実施例及び比較例で得られたπ共役系ポリマーを3mg量り取り、ESR管(5mφ)に入れESR測定を実施した。得られたスペクトルの面積値から、前記検量線を用いて全スピン量を定量した。得られたスピン量をπ共役系ポリマーの秤量値で割り、スピン濃度(Spin・g-1・1016)とした。
実施例及び比較例で得られた有機光電変換素子の暗電流(Jd)を、それぞれ分光感度測定装置(CEP-2000、分光計器社製)と半導体パラメーターアナライザー(Agilent Technology B1500A、アジレントテクノロジー社製)を用いて測定した。
π共役系ポリマーのポリスチレン換算の重量平均分子量はゲル浸透クロマトグラフィー(GPC)により求めた。
カラム:TOSOH TSKgel SuperHM-H(2本)+TSKgel SuperH2000(4.6mm I.d.×15cm)
検出器:RI(SHIMADZU RID-10A)
移動相:テトラヒドロフラン(THF)
P-2は、1-Material社製、商品名:「PCE10」を使用した。π共役系粗ポリマー(P-2)の重量平均分子量(Mw)は144,000であった。
P-3は、Lumtec社製、商品名:「PDPP3T」を使用した。π共役系粗ポリマー(P-3)の重量平均分子量(Mw)は59,400であった。
N-1は、フロンティアカーボン社製、商品名:「E100」を使用した。
<π共役系ポリマーの製造>
冷却装置を備えたガラス製反応容器内を窒素ガス雰囲気としたのち、該反応容器に国際公開第2013/051676号に記載の方法を参考に合成したπ共役系粗ポリマー(P-1)0.1gと、過酸化物の含有量が0.03%のテトラヒドロナフタレン(テトラリン)9.9gを加えたのち、80℃で7時間加熱溶解させた。得られたポリマー溶液をメタノールに注いでπ共役系ポリマーを析出させた。得られたπ共役系ポリマーをE-1とする。
π共役系ポリマー(E-1)とC60PCBM(フロンティアカーボン社製、商品名:E100)とを質量比1:2で混合して、第1溶媒であるo-キシレンと第2溶媒であるアセトフェノンとの混合溶媒(o-キシレン:アセトフェノン=95:5(質量比))に加え、80℃で10時間撹拌することにより、インク組成物を調製した。なお、インク組成物の質量に基づいて、π共役系ポリマー(E-1)の含有量は0.66質量%であり、C60PCBMの含有量は1.32質量%である。
スパッタ法により150nmの厚みでITOを製膜したガラス基板をオゾンUV処理して表面処理を行った。次にポリエチレンイミンエトキシレート(PEIE)(アルドリッチ社製、商品名ポリエチレンイミン、80%エトキシ化溶液、重量平均分子量110,000)を2-メトキシエタノールで1/500倍に希釈した塗布溶液を、スピンコート法により、ガラスITO基板のITO薄膜上に塗布した。
上記で得られたインク組成物を、ガラス基板の電子輸送層1上にナイフコート法により塗布し、塗膜を得た。得られた塗膜を、100℃に加熱したホットプレートを用いて、5分間乾燥させて、活性層を形成した。形成された活性層の厚さは500nmであった。次に、陽極としてPEDOT(Heraeus社製、商品名:FHC Solar)をスピンコート法により、該活性層上に塗布し、85℃に加熱されたオーブンを用いて、30分間乾燥させた。形成されたPEDOT層は100nmであった。得られた有機光電変換素子の周辺に、UV硬化性封止剤を塗布し、封止基板であるガラス基板を貼り合わせた後、UV光を照射することで光電変換素子を封止した。得られた光電変換素子の厚さ方向から見たときの平面的な形状は2mm×2mmの正方形であった。
π共役系ポリマー(P-1)に代えて、π共役系ポリマー(P-2)を使用したこと以外は、実施例1と同様に、π共役系ポリマー(E-2)及び有機光電変換素子を得た。
π共役系ポリマー(P-1)に代えて、π共役系ポリマー(P-3)を使用したこと以外は、実施例1と同様に、π共役系ポリマー(E-3)及び有機光電変換素子を得た。
テトラヒドロナフタレン中の過酸化物の含有量を0.03%から0.17%に変更したこと以外は、実施例1と同様に、π共役系ポリマー(C-1)及び有機光電変換素子を得た。
π共役系ポリマー(P-1)に代えて、π共役系ポリマー(P-2)を使用したこと以外は、比較例1と同様に、π共役系ポリマー(C-2)及び有機光電変換素子を得た。
π共役系ポリマー(P-1)に代えて、π共役系ポリマー(P-3)を使用したこと以外は、比較例1と同様に、π共役系ポリマー(C-3)及び有機光電変換素子を得た。
したがって、本発明の方法で製造されたπ共役系ポリマーは、加熱を伴う精製工程を含んでいても、得られる有機光電変換素子の暗電流の上昇を抑制できることが確認された。
Claims (5)
- π共役系粗ポリマーを溶媒に加熱溶解させてポリマー溶液を得る工程(I)、及び、該ポリマー溶液からπ共役系ポリマーを析出させる工程(II)を含む、π共役系ポリマーの製造方法であって、
該溶媒は、工程(I)で該π共役系粗ポリマーを溶解可能な溶媒であり、
工程(I)において、該溶媒中の過酸化物の含有量は、高速液体クロマトグラフィーで測定される相対面積比で0.1%以下であり、
該π共役系ポリマーの電子スピン濃度は、30×1016Spin/g以下、及び/又はπ共役系粗ポリマーの電子スピン濃度の2.5倍以下である、方法。 - 前記π共役系粗ポリマーはD-A型π共役系粗ポリマーであり、前記π共役系ポリマーはD-A型π共役系ポリマーである、請求項1に記載の方法。
- 工程(I)において、前記溶媒は、ベンジル水素含有芳香族系溶媒、ハロゲン原子含有芳香族系溶媒、及びエーテル系溶媒からなる群から選択される少なくとも1つ以上を含む、請求項1又は2に記載の方法。
- 工程(I)において、温度40℃以上で加熱溶解させる、請求項1~3のいずれかに記載の方法。
- 陽極及び陰極を含む一対の電極、並びに該一対の電極間に設けられ、請求項1~4のいずれかに記載の方法により製造されるπ共役系ポリマーを含む活性層を備える、有機光電変換素子の製造方法。
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US17/630,017 US20220255007A1 (en) | 2019-07-30 | 2020-07-16 | METHOD FOR PRODUCING pi-CONJUGATED POLYMER |
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CN202080053188.XA CN114174374B (zh) | 2019-07-30 | 2020-07-16 | π共轭系聚合物的制造方法 |
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